INFINEON BTS5236 User Manual
Datasheet, V 1.1, July 2007
BTS5236-2GS
Smart High-Side Power Switch
PROFET
Two Channels, 50 mΩ
Automotive Power
Smart High-Side Power Switch
BTS5236-2GS
Table of Contents Page
1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.1 Pin Assignment BTS5236-2GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3.1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Block Description and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . 10
4.1 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1.1 Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1.2 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1.3 Inductive Output Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.1.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.2 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.2.1 Over Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.2.2 Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.2.3 Over Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.2.4 Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.2.5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.3 Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.3.1 ON-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4.3.2 OFF-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.3.3 Sense Enable Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
4.3.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5 Package Outlines BTS5236-2GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
6 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Datasheet 2 V 1.1, 2007-09-07
Smart High-Side Power Switch
PROFET
Product Summary
The BTS5236-2GS is a dual channel high-side power
switch in PG-DSO-14-32 package providing
embedded protective functions.
The power transistor is built by a N-channel vertical
power MOSFET with charge pump. The device is
monolithically integrated in Smart SIPMOS
technology.
Operating voltage
V
bb(on)
BTS5236-2GS
PG-DSO-14-32
4.5 … 28 V
Over voltage protection
On-State resistance
Nominal load current (one channel active)
Current limitation
Current limitation repetitive
Standby current for whole device with load
V
bb(AZ)
R
DS(ON)
I
L(nom)
I
L(LIM)
I
L(SCr)
I
bb(OFF)
Basic Features
• Green product (RoHS Compliant)
• Very low standby current
• 3.3 V and 5 V compatible logic pins
• Improved electromagnetic compatibility (EMC)
• Stable behavior at under voltage
• Logic ground independent from load ground
• Secure load turn-off while logic ground disconnected
• Optimized inverse current capability
• AEC qualified
41 V
50 mΩ
3.2 A
23 A
6A
2.5 µA
Type Package Marking
BTS5236-2GS PG-DSO-14-32 BTS5236-2GS
Datasheet 3 V 1.1, 2007-09-07
Smart High-Side Power Switch
BTS5236-2GS
Protective Functions
• Reverse battery protection without external components
• Short circuit protection
• Overload protection
• Multi-step current limitation
• Thermal shutdown with restart
• Thermal restart at reduced current limitation
• Over voltage protection without external resistor
• Loss of ground protection
• Electrostatic discharge protection (ESD)
Diagnostic Functions
• Enhanced IntelliSense signal for each channel
• Enable function for diagnosis pins (IS1and IS2)
• Proportional load current sense signal by current source
• High accuracy of current sense signal at wide load current range
• Open load detection in ON-state by load current sense
• Over load (current limitation) diagnosis in ON-state, signalling by voltage source
• Latched over temperature diagnosis in ON-state, signalling by voltage source
• Open load detection in OFF-state, signalling by voltage source
Applications
• µC compatible high-side power switch with diagnostic feedback for 12 V grounded
loads
• Suitable for automotive and industrial applications
• All types of resistive, inductive and capacitive loads
• Suitable for loads with high inrush currents, such as lamps
• Suitable for loads with low currents, such as LEDs
• Replaces electromechanical relays, fuses and discrete circuits
Datasheet 4 V 1.1, 2007-09-07
Smart High-Side Power Switch
BTS5236-2GS
Overview
1Overview
The BTS5236-2GS is a dual channel high-side power switch (two times 50mΩ) in
PG-DSO-14-32 package providing embedded protective functions.
The Enhanced IntelliSense pins IS1 and IS2 provide a sophisticated diagnostic feedback
signal including current sense function, over load and over temperature alerts in ONstate and open load alert in OFF-state. The diagnosis signals can be switched on and
off by the sense enable pin SEN.
An integrated ground resistor as well as integrated resistors at each input pin (IN1, IN2,
SEN) reduce external components to a minimum.
The power transistor is built by a N-channel vertical power MOSFET with charge pump.
The inputs are ground referenced CMOS compatible. The device is monolithically
integrated in Smart SIPMOS technology.
1.1 Block Diagram
IN1
IS1
SEN
IN2
IS2
channel 1
internal
power
suppl y
ESD
protection
channel 2
load cur rent
sense
gate control
&
char ge pump
logic
control and protecti on ci r c ui t
open load
detection
tem peratur e sensor
over load detection
equival ent to
channel 1
R
GND
VBB
clamp for
inductive load
multi step
load cur rent
limitation
OUT1
OUT2
GND
Figure 1 Block Diagram
Datasheet 5 V 1.1, 2007-09-07
Smart High-Side Power Switch
BTS5236-2GS
1.2 Terms
Following figure shows all terms used in this datasheet.
V
bb
I
IN1
IN1
V
IN1
V
IN2
I
IN2
IN2
I
IS1
BTS5236-2GS
IS1
I
V
IS2
IS1
V
IS2
I
V
SEN
SEN
IS2
SEN
VBB
GND
I
bb
I
GND
OUT1
OUT2
Overview
I
L1
I
L2
V
V
V
V
OUT1
DS2
OUT2
DS1
Terms2ch.emf
Figure 2 Terms
In all tables of electrical characteristics is valid: Channel related symbols without channel
number are valid for each channel separately.
Datasheet 6 V 1.1, 2007-09-07
Smart High-Side Power Switch
BTS5236-2GS
2 Pin Configuration
2.1 Pin Assignment BTS5236-2GS
(to p view)
GND
IN1
IS1
VBB
IS2
IN2
SEN
1
2
3
4
5
6
78
14
13
12
11
10
Pin Configuration
VBB
OUT1
OUT1
VBB
OUT2
9
OUT2
VBB
Figure 3 Pin Configuration PG-DSO-14-32
2.2 Pin Definitions and Functions
Pin Symbol I/O Function
2 IN1 I Input signal for channel 1
6 IN2 I Input signal for channel 2
3 IS1 O Diagnosis output signal channel 1
5 IS2 O Diagnosis output signal channel 2
7 SEN I Sense Enable input for channel 1&2
12, 13 OUT1
9, 10 OUT2
1 GND – Ground connection
4, 8, 11, 14VBB
1)
1)
2)
O Protected high-side power output channel 1
O Protected high-side power output channel 2
– Positive power supply for logic supply as well as
output power supply
1) All output pins of each channel have to be connected
2) All VBB pins have to be connected
Datasheet 7 V 1.1, 2007-09-07
Smart High-Side Power Switch
BTS5236-2GS
Electrical Characteristics
3 Electrical Characteristics
3.1 Maximum Ratings
Stresses above the ones listed here may affect device reliability or may cause permanent
damage to the device.
Unless otherwise specified:
T
= 25 °C
j
Pos. Parameter Symbol Limit Values Unit Test
Conditions
R = 0.2 Ω
1)
Supply Voltage
3.1.1 Supply voltage
3.1.2 Supply voltage for full short
circuit protection (single pulse)
T
= -40 °C .. 150 °C)
(
j(0)
V
bb
V
bb(SC)
min. max.
-16 28 V
028VL = 8 µH,
3.1.3 Voltage at power transistor V
3.1.4 Supply Voltage for Load Dump
V
protection
Power Stages
3.1.5 Load current
3.1.6 Maximum energy dissipation
I
E
single pulse
3.1.7 Power dissipation (DC)
P
Logic Pins
3.1.8 Voltage at input pin
3.1.9 Current through input pin
3.1.10 Voltage at sense enable pin
V
I
V
DS
bb(LD)
L
AS
tot
IN
IN
SEN
-5
-16
-2.0
-8.0
-5
-16
52 V
41 V R
I
L(LIM)
A
110 mJ
1.1 W T
10 V
2.0 mA
10 V
= 2 Ω
I
R
= 6.8 Ω
L
3)
2)
Vbb = 13.5V
I
(0) = 2 A
L
T
(0) = 150 °C
j
= 85 °C
a
T
≤ 150 °C
j
t ≤ 2min
t ≤ 2min
t ≤ 2min
4)
5)
3.1.11 Current through sense enable
pin
3.1.12 Current through sense pin
Datasheet 8 V 1.1, 2007-09-07
I
SEN
I
IS
-2.0
2.0 mA
-8.0
-25 10 mA
t ≤ 2min
Smart High-Side Power Switch
BTS5236-2GS
Electrical Characteristics
Unless otherwise specified:
T
= 25 °C
j
Pos. Parameter Symbol Limit Values Unit Test
min. max.
Conditions
Temperatures
3.1.13 Junction Temperature
3.1.14 Dynamic temperature increase
T
j
∆T
-40 150 °C
j
-60°C
while switching
3.1.15 Storage Temperature
T
stg
-55 150 °C
ESD Susceptibility
3.1.16 ESD susceptibility HBM
IN, SEN
OUT
1) R and L describe the complete circuit impedance including line, contact and generator impedances.
R
2) Load Dump is specified in ISO 7637,
3) Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal
operating range. Protection features are not designed for continuous repetitive operation.
4) Pulse shape represents inductive switch off:
5) Device mounted on PCB (50 mm × 50 mm × 1.5mm epoxy, FR4) with 6 cm
layer, 70 µm thick) for
V
connection. PCB is vertical without blown air.
bb
is the internal resistance of the Load Dump pulse generator.
I
V
ESD
IS
I
(t) = IL(0) * (1 - t / t
L
-1
-2
-4
pulse
1
2
4
); 0 < t < t
kV according to
EIA/JESD
22-A 114B
.
pulse
2
copper heatsinking area (one
Datasheet 9 V 1.1, 2007-09-07
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