The BTS 5235-2L is a dual channel high-side power
switch in PG-DSO-12-9 package providing
embedded protective functions.
The power transistor is built by a N-channel vertical
power MOSFET with charge pump. The device is
monolithically integrated in Smart SIPMOS
technology.
Operating voltage
V
bb(on)
BTS 5235-2L
PG-DSO-12-9
4.5 … 28 V
Over voltage protection
On-State resistance
Nominal load current (one channel active)
Current limitation
Current limitation repetitive
Standby current for whole device with load
V
bb(AZ)
R
DS(ON)
I
L(nom)
I
L(LIM)
I
L(SCr)
I
bb(OFF)
Basic Features
• Very low standby current
• 3.3 V and 5 V compatible logic pins
• Improved electromagnetic compatibility (EMC)
• Stable behavior at under voltage
• Logic ground independent from load ground
• Secure load turn-off while logic ground disconnected
• Optimized inverse current capability
• Green product (RoHS compliant)
41 V
60 mΩ
3.5 A
23 A
6A
2.5 µA
TypeOrdering CodePackage
BTS 5235-2LPG-DSO-12-9
Target Data Sheet3V1.2, 2006-08-08
Smart High-Side Power Switch
BTS 5235-2L
Protective Functions
• Reverse battery protection without external components
• Short circuit protection
• Overload protection
• Multi-step current limitation
• Thermal shutdown with restart
• Thermal restart at reduced current limitation
• Over voltage protection without external resistor
• Loss of ground protection
• Electrostatic discharge protection (ESD)
Diagnostic Functions
• Enhanced IntelliSense signal for each channel
• Enable function for diagnosis pins (IS1 and IS2)
• Proportional load current sense signal by current source
• High accuracy of current sense signal at wide load current range
• Open load detection in ON-state by load current sense
• Over load (current limitation) diagnosis in ON-state, signalling by voltage source
• Latched over temperature diagnosis in ON-state, signalling by voltage source
• Open load detection in OFF-state, signalling by voltage source
Applications
• µC compatible high-side power switch with diagnostic feedback for 12 V grounded
loads
• All types of resistive, inductive and capacitive loads
• Suitable for loads with high inrush currents, so as lamps
• Suitable for loads with low currents, so as LEDs
• Replaces electromechanical relays, fuses and discrete circuits
Target Data Sheet4V1.2, 2006-08-08
Smart High-Side Power Switch
BTS 5235-2L
Overview
1Overview
The BTS 5235-2L is a dual channel high-side power switch (two times 60 mΩ) in
PG-DSO-12-9 power package providing embedded protective functions.
The Enhanced IntelliSense pins IS1 and IS2 provide a sophisticated diagnostic feedback
signal including current sense function, over load and over temperature alerts in ONstate and open load alert in OFF-state. The diagnosis signals can be switched on and
off by the sense enable pin SEN.
An integrated ground resistor as well as integrated resistors at each input pin (IN1, IN2,
SEN) reduce external components to a minimum.
The power transistor is built by a N-channel vertical power MOSFET with charge pump.
The inputs are ground referenced CMOS compatible. The device is monolithically
integrated in Smart SIPMOS technology.
1.1Block Diagram
IN1
IS1
SEN
IN2
IS2
channel 1
inter nal
power
supply
ESD
protection
channel 2
load current
sense
gate contr ol
&
charge pum p
logic
contr ol and pr otec tion circuit
open load
detecti on
tem peratur e sensor
over l oad detection
equivalent to
channel 1
R
GND
VBB
clamp for
inducti ve load
multi step
load cur r ent
limitation
OUT1
OUT2
GND
Figure 1Block Diagram
Target Data Sheet5V1.2, 2006-08-08
Smart High-Side Power Switch
BTS 5235-2L
1.2Terms
Following figure shows all terms used in this target data sheet.
V
bb
I
IN1
IN1
V
IN1
V
IN2
I
IN2
IN2
I
IS1
BTS 5235-2L
IS1
I
V
IS2
IS1
V
IS2
I
V
SEN
SEN
IS2
SEN
VBB
GND
I
bb
I
GND
OUT1
OUT2
Overview
I
L1
I
L2
V
V
V
V
OUT1
DS2
OUT2
DS1
Terms2ch.emf
Figure 2Terms
In all tables of electrical characteristics is valid: Channel related symbols without channel
number are valid for each channel separately.
Target Data Sheet6V1.2, 2006-08-08
Smart High-Side Power Switch
BTS 5235-2L
2Pin Configuration
2.1Pin Assignment BTS 5235-2L
(top view)
GND
IN1
IS1
IS2
IN2
VBB
1
2
3
4
5
6
12
11
10
9
8
7
heat slug (VBB)
Pin Configuration
VBB
OUT1
OUT1
OUT2
OUT2
SEN
Figure 3Pin Configuration PG-DSO-12-9
2.2Pin Definitions and Functions
PinSymbolI/OFunction
2 IN1IInput signal for channel 1
5 IN2IInput signal for channel 2
3 IS1ODiagnosis output signal channel 1
4 IS2ODiagnosis output signal channel 2
7 SENISense Enable input for channel 1&2
10,11 OUT1
8, 9 OUT2
1 GND–Ground connection
6,12,
VBB
heat slug
1)
1)
2)
OProtected high-side power output channel 1
OProtected high-side power output channel 2
–Positive power supply for logic supply as well as
output power supply
1) All output pins of each channel have to be connected
2) All VBB pins have to be connected
Target Data Sheet7V1.2, 2006-08-08
Smart High-Side Power Switch
BTS 5235-2L
Electrical Characteristics
3Electrical Characteristics
3.1Maximum Ratings
Stresses above the ones listed here may affect device reliability or may cause permanent
damage to the device.
Unless otherwise specified:
T
= 25 °C
j
Pos.ParameterSymbolLimit ValuesUnitTest
Conditions
R = 0.2 Ω
1)
Supply Voltage
3.1.1Supply voltage
3.1.2Supply voltage for full short
circuit protection (single pulse)
(
T
= -40 °C .. 150 °C)
j(0)
V
bb
V
bb(SC)
min.max.
-1628V
028VL = 8 µH,
3.1.3Voltage at power transistor V
3.1.4Supply Voltage for Load Dump
V
protection
Power Stages
3.1.5Load current
3.1.6Maximum energy dissipation
I
E
single pulse
3.1.7Power dissipation (DC)
P
Logic Pins
3.1.8Voltage at input pin
3.1.9Current through input pin
3.1.10Voltage at sense enable pin
V
I
V
DS
bb(LD)
L
AS
tot
IN
IN
SEN
-5
-16
-2.0
-8.0
-5
-16
52V
41VR
I
L(LIM)
A
= 2 Ω
I
R
= 6.8 Ω
L
3)
110mJIL(0) = 2 A
T
(0) = 150 °C
j
V
=12V
bb
1.6 WT
= 85 °C
a
T
≤ 150 °C
j
10V
t ≤ 2min
2.0mA
t ≤ 2min
10V
t ≤ 2min
2)
4)
5)
3.1.11Current through sense enable
pin
3.1.12Current through sense pin
Target Data Sheet8V1.2, 2006-08-08
I
SEN
I
IS
-2.0
2.0mA
-8.0
-2510mA
t ≤ 2min
Smart High-Side Power Switch
BTS 5235-2L
Electrical Characteristics
Unless otherwise specified:
T
= 25 °C
j
Pos.ParameterSymbolLimit ValuesUnitTest
min.max.
Conditions
Temperatures
3.1.13Junction Temperature
3.1.14Dynamic temperature increase
T
∆T
j
j
-40150°C
-60°C
while switching
3.1.15Storage Temperature
T
stg
-55150°C
ESD Susceptibility
3.1.16ESD susceptibility HBM
IN, SEN
OUT
1) R and L describe the complete circuit impedance including line, contact and generator impedances
2) Load Dump is specified in ISO 7636,
3) Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal
operating range. Protection features are not designed for continuous repetitive operation.
4) Pulse shape represents inductive switch off:
5) Device mounted on PCB (50 mm × 50 mm × 1.5mm epoxy, FR4) with 6 cm
V
layer, 70 µm thick) for
connection. PCB is vertical without blown air.
bb
R
is the internal resistance of the Load Dump pulse generator
I
V
ESD
IS
I
(t) = IL(0) * (1 - t / t
L
-1
-2
-4
pulse
1
2
4
); 0 < t < t
kVaccording to
EIA/JESD
22-A 114B
pulse
2
copper heatsinking area (one
Target Data Sheet9V1.2, 2006-08-08
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