INFINEON BTS 5235-2L User Manual

Target Data Sheet, V1.2, Aug 2006
BTS 5235-2L
Smart High-Side Power Switch
PROFET
Two Channels, 60 m
Automotive Power
BTS 5235-2L
Table of Contents Page
1Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
2.1 Pin Assignment BTS 5235-2L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
3.1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4 Block Description and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . .10
4.1 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
4.1.1 Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1.2 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1.3 Inductive Output Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.1.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.2 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
4.2.1 Over Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.2.2 Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.2.3 Over Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.2.4 Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.2.5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.3 Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
4.3.1 ON-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.3.2 OFF-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
4.3.3 Sense Enable Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
4.3.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
5 Package Outlines BTS 5235-2L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26
6 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27
Target Data Sheet 2 V1.2, 2006-08-08
Smart High-Side Power Switch PROFET

Product Summary

The BTS 5235-2L is a dual channel high-side power switch in PG-DSO-12-9 package providing embedded protective functions.
The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device is monolithically integrated in Smart SIPMOS technology.
Operating voltage
V
bb(on)
BTS 5235-2L
PG-DSO-12-9
4.5 … 28 V
Over voltage protection
On-State resistance
Nominal load current (one channel active)
Current limitation
Current limitation repetitive
Standby current for whole device with load
V
bb(AZ)
R
DS(ON)
I
L(nom)
I
L(LIM)
I
L(SCr)
I
bb(OFF)
Basic Features
• Very low standby current
• 3.3 V and 5 V compatible logic pins
• Improved electromagnetic compatibility (EMC)
• Stable behavior at under voltage
• Logic ground independent from load ground
• Secure load turn-off while logic ground disconnected
• Optimized inverse current capability
• Green product (RoHS compliant)
41 V
60 m
3.5 A
23 A
6A
2.5 µA
Type Ordering Code Package
BTS 5235-2L PG-DSO-12-9
Target Data Sheet 3 V1.2, 2006-08-08
BTS 5235-2L
Protective Functions
• Reverse battery protection without external components
• Short circuit protection
• Overload protection
• Multi-step current limitation
• Thermal shutdown with restart
• Thermal restart at reduced current limitation
• Over voltage protection without external resistor
• Loss of ground protection
• Electrostatic discharge protection (ESD)
Diagnostic Functions
• Enhanced IntelliSense signal for each channel
• Enable function for diagnosis pins (IS1 and IS2)
• Proportional load current sense signal by current source
• High accuracy of current sense signal at wide load current range
• Open load detection in ON-state by load current sense
• Over load (current limitation) diagnosis in ON-state, signalling by voltage source
• Latched over temperature diagnosis in ON-state, signalling by voltage source
• Open load detection in OFF-state, signalling by voltage source
Applications
µC compatible high-side power switch with diagnostic feedback for 12 V grounded
loads
• All types of resistive, inductive and capacitive loads
• Suitable for loads with high inrush currents, so as lamps
• Suitable for loads with low currents, so as LEDs
• Replaces electromechanical relays, fuses and discrete circuits
Target Data Sheet 4 V1.2, 2006-08-08
BTS 5235-2L
Overview

1Overview

The BTS 5235-2L is a dual channel high-side power switch (two times 60 m) in
PG-DSO-12-9 power package providing embedded protective functions.
The Enhanced IntelliSense pins IS1 and IS2 provide a sophisticated diagnostic feedback signal including current sense function, over load and over temperature alerts in ON­state and open load alert in OFF-state. The diagnosis signals can be switched on and off by the sense enable pin SEN.
An integrated ground resistor as well as integrated resistors at each input pin (IN1, IN2, SEN) reduce external components to a minimum.
The power transistor is built by a N-channel vertical power MOSFET with charge pump. The inputs are ground referenced CMOS compatible. The device is monolithically integrated in Smart SIPMOS technology.

1.1 Block Diagram

IN1
IS1
SEN
IN2
IS2
channel 1
inter nal
power supply
ESD
protection
channel 2
load current
sense
gate contr ol
&
charge pum p
logic
contr ol and pr otec tion circuit
open load
detecti on
tem peratur e sensor
over l oad detection
equivalent to
channel 1
R
GND
VBB
clamp for
inducti ve load
multi step
load cur r ent
limitation
OUT1
OUT2
GND
Figure 1 Block Diagram
Target Data Sheet 5 V1.2, 2006-08-08
BTS 5235-2L

1.2 Terms

Following figure shows all terms used in this target data sheet.
V
bb
I
IN1
IN1
V
IN1
V
IN2
I
IN2
IN2
I
IS1
BTS 5235-2L
IS1
I
V
IS2
IS1
V
IS2
I
V
SEN
SEN
IS2
SEN
VBB
GND
I
bb
I
GND
OUT1
OUT2
Overview
I
L1
I
L2
V
V
V
V
OUT1
DS2
OUT2
DS1
Terms2ch.emf
Figure 2 Terms
In all tables of electrical characteristics is valid: Channel related symbols without channel number are valid for each channel separately.
Target Data Sheet 6 V1.2, 2006-08-08
BTS 5235-2L

2 Pin Configuration

2.1 Pin Assignment BTS 5235-2L

(top view)
GND
IN1
IS1
IS2
IN2
VBB
1
2
3
4
5
6
12
11
10
9
8
7
heat slug (VBB)
Pin Configuration
VBB
OUT1
OUT1
OUT2
OUT2
SEN
Figure 3 Pin Configuration PG-DSO-12-9

2.2 Pin Definitions and Functions

Pin Symbol I/O Function
2 IN1 I Input signal for channel 1
5 IN2 I Input signal for channel 2
3 IS1 O Diagnosis output signal channel 1
4 IS2 O Diagnosis output signal channel 2
7 SEN I Sense Enable input for channel 1&2
10,11 OUT1
8, 9 OUT2
1 GND Ground connection
6,12,
VBB
heat slug
1)
1)
2)
O Protected high-side power output channel 1
O Protected high-side power output channel 2
Positive power supply for logic supply as well as
output power supply
1) All output pins of each channel have to be connected
2) All VBB pins have to be connected
Target Data Sheet 7 V1.2, 2006-08-08
BTS 5235-2L
Electrical Characteristics

3 Electrical Characteristics

3.1 Maximum Ratings

Stresses above the ones listed here may affect device reliability or may cause permanent damage to the device.
Unless otherwise specified:
T
= 25 °C
j
Pos. Parameter Symbol Limit Values Unit Test
Conditions
R = 0.2
1)
Supply Voltage
3.1.1 Supply voltage
3.1.2 Supply voltage for full short circuit protection (single pulse) (
T
= -40 °C .. 150 °C)
j(0)
V
bb
V
bb(SC)
min. max.
-16 28 V
028VL = 8 µH,
3.1.3 Voltage at power transistor V
3.1.4 Supply Voltage for Load Dump
V
protection
Power Stages
3.1.5 Load current
3.1.6 Maximum energy dissipation
I
E
single pulse
3.1.7 Power dissipation (DC)
P
Logic Pins
3.1.8 Voltage at input pin
3.1.9 Current through input pin
3.1.10 Voltage at sense enable pin
V
I
V
DS
bb(LD)
L
AS
tot
IN
IN
SEN
-5
-16
-2.0
-8.0
-5
-16
52 V
41 V R
I
L(LIM)
A
= 2
I
R
= 6.8
L
3)
110 mJ IL(0) = 2 A
T
(0) = 150 °C
j
V
=12V
bb
1.6 W T
= 85 °C
a
T
150 °C
j
10 V
t 2min
2.0 mA
t 2min
10 V
t 2min
2)
4)
5)
3.1.11 Current through sense enable pin
3.1.12 Current through sense pin
Target Data Sheet 8 V1.2, 2006-08-08
I
SEN
I
IS
-2.0
2.0 mA
-8.0
-25 10 mA
t 2min
BTS 5235-2L
Electrical Characteristics
Unless otherwise specified:
T
= 25 °C
j
Pos. Parameter Symbol Limit Values Unit Test
min. max.
Conditions
Temperatures
3.1.13 Junction Temperature
3.1.14 Dynamic temperature increase
T
T
j
j
-40 150 °C
-60°C
while switching
3.1.15 Storage Temperature
T
stg
-55 150 °C
ESD Susceptibility
3.1.16 ESD susceptibility HBM
IN, SEN
OUT
1) R and L describe the complete circuit impedance including line, contact and generator impedances
2) Load Dump is specified in ISO 7636,
3) Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal
operating range. Protection features are not designed for continuous repetitive operation.
4) Pulse shape represents inductive switch off:
5) Device mounted on PCB (50 mm × 50 mm × 1.5mm epoxy, FR4) with 6 cm
V
layer, 70 µm thick) for
connection. PCB is vertical without blown air.
bb
R
is the internal resistance of the Load Dump pulse generator
I
V
ESD
IS
I
(t) = IL(0) * (1 - t / t
L
-1
-2
-4
pulse
1 2 4
); 0 < t < t
kV according to
EIA/JESD 22-A 114B
pulse
2
copper heatsinking area (one
Target Data Sheet 9 V1.2, 2006-08-08
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