INFINEON BTS 5234G User Manual

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Data Sheet, V1.0, January 2004

BTS 5234G

Smart High-Side Power Switch
PROFET
Two Channels, 60 mΩ

Automotive Power

Never stop thinking.

Smart High-Side Power Switch

BTS 5234G

Table of Contents Page

Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

1Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6

2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

2.1 Pin Assignment BTS 5234G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

3.1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

4 Block Description and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . .10

4.1 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

4.1.1 Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4.1.2 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4.1.3 Inductive Output Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

4.1.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

4.2 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

4.2.1 Over Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

4.2.2 Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

4.2.3 Over Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

4.2.4 Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

4.2.5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

4.3 Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18

4.3.1 ON-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

4.3.2 OFF-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

4.3.3 Sense Enable Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

4.3.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

5 Package Outlines BTS 5234G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24

6 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25

Data Sheet 2 V1.0, 2004-01-23

Smart High-Side Power Switch
PROFET

Product Summary

The BTS 5234G is a dual channel high-side power
switch in P-DSO-20-21 package providing embedded
protective functions.

The power transistor is built by a N-channel vertical
power MOSFET with charge pump. The device is
monolithically integrated in Smart SIPMOS
technology.

Operating voltage

V

bb(on)

BTS 5234G

P-DSO-20-21

4.5..28V

Over voltage protection

On-State resistance

Nominal load current (one channel active)

Current limitation

Current limitation repetitive

Standby current for whole device with load

V

bb(AZ)

R

DS(ON)

I

L(nom)

I

L(LIM)

I

L(SCr)

I

bb(OFF)

Basic Features

• Very low standby current

• 3.3 V and 5 V compatible logic pins

• Improved electromagnetic compatibility (EMC)

• Stable behavior at under voltage

• Logic ground independent from load ground

• Secure load turn-off while logic ground disconnected

• Optimized inverse current capability

41 V

60 mΩ

3.3 A

23 A

6A

2.5 µA

Type Ordering Code Package

BTS 5234G Q67060-S6156 P-DSO-20-21

Data Sheet 3 V1.0, 2004-01-23

Smart High-Side Power Switch

Protective Functions

• Reverse battery protection without external components

• Short circuit protection

• Overload protection

• Multi-step current limitation

• Thermal shutdown with restart

• Thermal restart at reduced current limitation

• Over voltage protection without external resistor

• Loss of ground protection

• Electrostatic discharge protection (ESD)

Diagnostic Functions

• Enhanced IntelliSense signal for each channel

• Enable function for diagnosis pins (IS1 and IS2)

• Proportional load current sense signal by current source

• High accuracy of current sense signal at wide load current range

• Open load detection in ON-state by load current sense

• Open load detection in OFF-state by voltage source

• Feedback on over temperature and current limitation in ON-state

BTS 5234G

Applications

• µC compatible high-side power switch with diagnostic feedback for 12 V grounded
loads

• All types of resistive, inductive and capacitive loads

• Suitable for loads with high inrush currents, so as lamps

• Suitable for loads with low currents, so as LEDs

• Replaces electromechanical relays, fuses and discrete circuits

Data Sheet 4 V1.0, 2004-01-23

Smart High-Side Power Switch

BTS 5234G

Overview

1Overview

The BTS 5234G is a dual channel high-side power switch (two times 60 mΩ) in
P-DSO-20-21 package providing embedded protective functions.

The Enhanced IntelliSense pins IS1 and IS2 provide a sophisticated diagnostic feedback
signal including current sense function and open load in off state. The diagnosis signals
can be switched on and off by the sense enable pin SEN.

An integrated ground resistor as well as integrated resistors at each input pin (IN1, IN2,
SEN) reduce external components to a minimum.

The power transistor is built by a N-channel vertical power MOSFET with charge pump.
The inputs are ground referenced CMOS compatible. The device is monolithically
integrated in Smart SIPMOS technology.

1.1 Block Diagram

VBB

OUT1

IN1

IS1

SEN

channel 1

internal

power
supply

ESD

protection

logic

load cur rent

sense

gate control

&

char ge pum p

open l oad

detection

tem per atur e

sensor

clamp for

inductive load

multi step

load cur r ent

limitation

channel 2

IN2

IS2

control and protecti on cir cuit

equival ent to

channel 1

R

GND

GND

OUT2

Figure 1 Block Diagram

Data Sheet 5 V1.0, 2004-01-23

Smart High-Side Power Switch

BTS 5234G

1.2 Terms

Following figure shows all terms used in this data sheet.

V

bb

I

IN1

IN1

V

IN1

V

IN2

I

IN2

IN2

I

IS1

BTS 5234G

IS1

I

V

IS1

IS2

IS2

V

IS2

I

SEN

SEN

V

SEN

VBB

GND

I

bb

I

GND

OUT1

OUT2

Overview

I

L1

I

L2

V

V

V

V

OUT1

DS2

OUT2

DS1

Ter m s2 ch . em f

Figure 2 Terms

Data Sheet 6 V1.0, 2004-01-23

Smart High-Side Power Switch

BTS 5234G

2 Pin Configuration

2.1 Pin Assignment BTS 5234G

(top view)

VBB

nc

GND

IN1

IS1

IS2

IN2

SEN

nc

1

2

3

4

5

6

7

8

9

20

19

18

17

16

15

14

13

12

Pin Configuration

VBB

OUT1

OUT1

OUT1

VBB

VBB

OUT2

OUT2

OUT2

VBB

10

11

VBB

Figure 3 Pin Configuration P-DSO-20-21

2.2 Pin Definitions and Functions

Pin Symbol I/O

OD

4 IN1 I Input signal for channel 1

7 IN2 I Input signal for channel 2

5 IS1 O Diagnosis output signal channel 1

6 IS2 O Diagnosis output signal channel 2

8 SEN I Sense Enable input for channel 1&2

17, 18 ,19 OUT1 O Protected high-side power output channel 1

12, 13, 14 OUT2 O Protected high-side power output channel 2

3 GND - Ground connection

Function

1, 10, 11,
20

VBB - Positive power supply for logic supply as well as

output power supply

2, 9 nc - not connected

Data Sheet 7 V1.0, 2004-01-23

Smart High-Side Power Switch

BTS 5234G

Electrical Characteristics

3 Electrical Characteristics

3.1 Maximum Ratings

Stresses above the ones listed here may affect device reliability or may cause permanent
damage to the device.

Unless otherwise specified:

T

= 25 °C

j

Pos. Parameter Symbol Limit Values Unit Test

Conditions

R = 0.2 Ω

1)

Supply Voltage

3.1.1 Supply voltage V

3.1.2 Supply voltage for full short

V

circuit protection (single pulse)

T

= -40°C .. 150°C)

(

j(0)

bb

bb(SC)

min. max.

-16 28 V

028VL = 8 µH,

3.1.3 Voltage at power transistor V

3.1.4 Supply Voltage for Load Dump

V

protection

Power Stages

3.1.5 Load current

3.1.6 Maximum energy dissipation

I

E

single pulse

3.1.7 Power dissipation (DC)

P

Logic Pins

3.1.8 Voltage at input pin

3.1.9 Current through input pin

3.1.10 Voltage at sense enable pin

V

I

V

DS

bb(LD)

L

AS

tot

IN

IN

SEN

-52V

41 V RI = 2 Ω

R

= 6.8 Ω

L

L(0)

T

3)

j(0)

= 2 A
= 150°C

- I

L(LIM)

A-

-0.58JI

-1.4WTa = 85 °C

T

≤ 150 °C

j

-5

-16

-2.0

-8.0

-5

-16

10 V

t ≤ 2min

2.0 mA

t ≤ 2min

10 V

t ≤ 2min

2)

4)

5)

3.1.11 Current through sense enable

pin

3.1.12 Current through sense pin

Data Sheet 8 V1.0, 2004-01-23

I

SEN

I

IS

-2.0

2.0 mA

-8.0

-25 10 mA

t ≤ 2min

Smart High-Side Power Switch

BTS 5234G

Electrical Characteristics

Unless otherwise specified:

T

= 25 °C

j

Pos. Parameter Symbol Limit Values Unit Test

min. max.

Conditions

Temperatures

3.1.13 Junction Temperature

3.1.14 Dynamic temperature increase

T

j

∆T

-40 150 °C

j

-60°C

while switching

3.1.15 Storage Temperature

T

stg

-55 150 °C

ESD Susceptibility

IS

V

ESD

-1

-2

-4

kV according to
1
2

EIA/JESD
22-A 114B

4

3.1.16 ESD susceptibility HBM
IN, SEN

OUT

1)

R and L describe the complete circuit impedance including line, contact and generator impedances

2)

Load Dump is specified in ISO 7636, RI is the internal resistance of the Load Dump pulse generator

3)

Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal
operating range. Protection features are not designed for continuous repetitive operation.

4)

Pulse shape represents inductive switch off: I

5)

Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one
layer, 70 µm thick) for V

connection. PCB is vertical without blown air.

bb

(t) = IL(0) * (1 - t / t

L

); 0 < t < t

peak

peak

Data Sheet 9 V1.0, 2004-01-23