INFINEON BTS 5215L User Manual
现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!
BTS 5215L
Smart High-Side Power Switch
Two Channels: 2 x 90mΩ
Status Feedback
Product Summary Package
Operating Voltage V
Active channels one two parallel
On-state Resistance R
Nominal load current I
Current limitation I
General Description
• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS
• Providing embedded protective functions
5.5...40V
bb
90mΩ 45mΩ
ON
3.7A 7.4A
L(NOM)
12A 12A
L(SCr)
technology.
P-DSO-12
Applications
• µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads
• All types of resistive, inductive and capacitve loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
• Very low standby current
• CMOS compatible input
• Improved electromagnetic compatibility (EMC)
• Fast demagnetization of inductive loads
• Stable behaviour at undervoltage
• Wide operating voltage range
• Logic ground independent from load ground
Protection Functions Block Diagram
• Short circuit protection
• Overload protection
• Current limitation
• Thermal shutdown
• Overvoltage protection (including load dump) with external
resistor
• Reverse battery protection with external resistor
• Loss of ground and loss of V
protection
bb
• Electrostatic discharge protection (ESD)
IN1
ST1
IN2
ST2
Vbb
Logic
Channel 1
Channel 2
Load 2
Load 1
Diagnostic Function
GND
• Diagnostic feedback with open drain output
• Open load detection in OFF-state
• Feedback of thermal shutdown in ON-state
Infineon Technologies AG 1 2003-Oct-01
BTS 5215L
g
Functional diagram
GND
volta
internal
e supply
logic
gate
control
+
charge
pump
IN1
ST1
ESD
temperature
sensor
Open load
detection
channel 1
IN2
control and protection circuit
ST2
equivalent to
channel 1
current limit
clamp for
inductive load
reverse
battery
protection
VBB
OUT1
OUT2
Infineon Technologies AG 2 2003-Oct-01
BTS 5215L
Pin Definitions and Functions
Pin Symbol Function
1 GND Ground of chip
2 IN1
4 IN2
3 ST1
5 ST2
6,12,
Vbb Positive power supply voltage. Design the
heat
slug
7,9,11 NC Not Connected
8 OUT2
10 OUT1
Input 1,2 activates channel 1,2 in case of logic
high signal
Diagnostic feedback 1 & 2 of channel 1,2
open drain, low on failure
wiring for the simultaneous max. short circuit
currents from channel 1 to 2 and also for low
thermal resistance
Output 1,2 protected high-side power output
of channel 1 and 2. Design the wiring for the
max. short circuit current
Pin configuration
(top view)
GND 1
IN1 2 11 NC
ST1 3 10 OUT1
IN2 4 9 NC
ST2 5 8 OUT2
Vbb 6 7 NC
* heat slug
• 12 V
V
*
bb
bb
Infineon Technologies AG 3 2003-Oct-01
BTS 5215L
Maximum Ratings at T
= 25°C unless otherwise specified
j
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 6) Vbb 43 V
Supply voltage for full short circuit protection
T
= -40 ...+150°C
j,start
Vbb 36 V
Load current (Short-circuit current, see page 6) IL self-limited A
3
Load dump protection1) V
2)
R
= 2 Ω, td = 400 ms; IN = low or high,
I
LoadDump
= VA + Vs, VA = 13.5 V
V
Load dump
)
60 V
each channel loaded with RL = 13.5 Ω,
Operating temperature range
Storage temperature range
Power dissipation (DC)4) Ta = 25°C:
(all channels active)
T
= 85°C:
a
Maximal switchable inductance, single pulse
V
= 12V, T
bb
= 150°C4), see diagrams on page 10
j,start
IL = 3.5 A, EAS = 178 mJ, 0 Ω one channel:
IL = 7.0 A, E
= 337 mJ, 0 Ω two parallel channels:
AS
Electrostatic discharge capability (ESD) IN:
Tj
T
stg
P
3.1
tot
ZL
V
1.0
ESD
(Human Body Model) ST:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5kΩ; C=100pF
Input voltage (DC) see internal circuit diagram page 9 VIN -10 ... +16 V
Current through input pin (DC)
Pulsed current through input pin5)
Current through status pin (DC)
IIN
I
INp
IST
-40 ...+150
°C
-55 ...+150
W
1.6
21.310mH
kV
4.0
8.0
±0.3
mA
±5.0
±5.0
1)
Supply voltages higher than V
resistor for the GND connection is recommended.
2)
RI = internal resistance of the load dump test pulse generator
3)
V
Load dump
4)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
connection. PCB is vertical without blown air. See page 14
5)
only for testing
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Infineon Technologies AG 4 2003-Oct-01
require an external current limit for the GND and status pins (a 150Ω
bb(AZ)
2
(one layer, 70µm thick) copper area for Vbb
BTS 5215L
Thermal Characteristics
Parameter and Conditions Symbol Values Unit
Thermal resistance
junction - Case6) each channel: R
junction – ambient6)
@ 6 cm2 cooling area one channel active:
all channels active:
min typ max
R
thjC
thja
-- -- 5
--
--
--
-45
40
--
--
--
K/W
Electrical Characteristics
Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified
Load Switching Capabilities and Characteristics
min typ max
On-state resistance (Vbb to OUT); I
= 2 A
L
each channel, Tj = 25°C:
T
= 150°C:
j
two parallel channels, Tj = 25°C:
see diagram, page 11
Nominal load current one channel active:
two parallel channels active:
Device on PCB
Output current while GND disconnected or pulled up
V
= 32 V, V
bb
see diagram page 9
Turn-on time8) IN to 90% V
Turn-off time IN
R
= 12 Ω
L
Slew rate on 8) 10 to 30% V
Slew rate off 8) 70 to 40% V
6)
, Ta = 85°C, Tj ≤ 150°C
= 0,
IN
7)
OUT
to 10% V
, R
OUT
, RL = 12 Ω: -dV/dt
OUT
OUT
= 12 Ω: dV/dton 0.2 -- 1.0 V/µs
L
:
:
;
RON
I
I
ton
t
3.7
L(NOM)
L(GNDhigh)
off
-- -- 2 mA
0.2 -- 1.1 V/µs
off
--
--
--
7.4
--
--
70
140
35
4.7
90
mΩ
180
45
-- A
9.5
100
100
250
270
µs
6)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
connection. PCB is vertical without blown air. See page 14
7)
not subject to production test, specified by design
8)
See timing diagram on page 12.
2
(one layer, 70µm thick) copper area for Vbb
Infineon Technologies AG 5 2003-Oct-01
Loading...