INFINEON BTS 452 R User Manual

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Smart Power High-Side-Switch

BTS 452 R

Features

• Overload protection

• Current limitation

• Short circuit protection

• Thermal shutdown with restart

Product Summary

Overvoltage protection V

Operating voltage V

On-state resistance R

Nominal load current I

• Overvoltage protection

(including load dump)

• Fast demagnetization of inductive loads

• Reverse battery protection

with external resistor

• Open drain diagnostic output for overtemperature

and short circuit

• Open load detection in OFF - State

with external resistor

• CMOS compatible input

bb(AZ

bb(on

ON

L(ISO

62 V

6...52 V

200 mΩ

1.8 A

P-TO252-5-11

• Loss of GND and loss of V

protection

bb

• ESD - Protection

• Very low standby current

Application

• All types of resistive, inductive and capacitive loads

• µC compatible power switch for 12 V, 24 V and 42 V DC applications

• Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology.

Providing embedded protective functions.

Page 1

2004-01-27

Block Diagram

IN

ESD

ST

Voltage source

V

Logic

Overvoltage

protection

Charge pump

Level shifter

Rectifier

Current

limit

Gate

protection

Limit for

unclamped

ind. loads

Temperature

sensor

+ V

BTS 452 R

bb

OUT

Load

GND

Signal GND

miniPROFET

Pin Symbol Function

1

2

3

4

5

GND Logic ground

IN Input, activates the power switch in case of logic high signal

Vbb Positive power supply voltage

ST Diagnostic feedback

OUT Output to the load

TAB Vbb Positive power supply voltage

Pin configuration

Top view



Load GND

Tab = V

BB

1 2 (3) 4 5

GND IN ST OUT

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2004-01-27

BTS 452 R

)

Maximum Ratings at Tj = 25°C, unless otherwise specified

Parameter Symbol Value Unit

Supply voltage V

Supply voltage for full short circuit protection V

Continuous input voltage V

Load current (Short - circuit current, see page 5) I

Current through input pin (DC) I

Operating temperature T Storage temperature T

Power dissipation

1)

Inductive load switch-off energy dissipation

1)2)

P

E

single pulse, (see page 9)

Tj =150 °C, IL = 1 A

Load dump protection2) V

R

=2Ω, t

I

R

= 13.5 Ω

L

R

= 27 Ω

L

=400ms, VIN= low or high, VA=13,5V

d

LoadDump

3)

= VA + V

V

S

bb

bb(SC

IN

L

IN

j stg tot

AS

Loaddump

52 V

50

-10 ... +16

self limited A

± 5

-40 ...+150

-55 ... +150

41.6 W

150 mJ

73.5

88.5

mA

°C

V

Electrostatic discharge voltage (Human Body Model)

V

ESD

according to ANSI EOS/ESD - S5.1 - 1993

ESD STM5.1 - 1998

Input pin

all other pins

Thermal Characteristics

junction - case:

Thermal resistance @ min. footprint R

Thermal resistance @ 6 cm2 cooling area

1

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. (see page 17) 2

not subject to production test, specified by design 3

V

Loaddump

Supply voltages higher than V

150Ω resistor in GND connection. A resistor for the protection of the input is integrated.

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .

require an external current limit for the GND pin, e.g. with a

bb(AZ)

1)

R

thJC

th(JA

- - 3 K/W

- 80 - K/W

- 45 60

kV

± 1 ± 5

Page 3

2004-01-27

BTS 452 R

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p)

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at Tj = -40...+150°C, V

= 12..42V, unless otherwise specified min. typ. max.

bb

Load Switching Capabilities and Characteristics

On-state resistance

T

= 25 °C, IL = 1 A, Vbb = 9...52 V

j

T

= 150 °C

j

Nominal load current; Device on PCB 1)

T

= 85 °C, VON = 0.5 V

C

Turn-on time to 90% V

R

= 47 Ω

L

Turn-off time to 10% V

R

= 47 Ω

L

Slew rate on 10 to 30% V

R

= 47 Ω, V

L

= 13.5 V

bb

Slew rate off 70 to 40% V

R

= 47 Ω, V

L

= 13.5 V

bb

OUT

,

R

ON

I

L(ISO)

t

on

t

off

dV/dt

-dV/dt

on

off

-

150

270

200

380

mΩ

1.8 2.2 - A

- 80 180

µs

- 80 200

- 0.7 2

V/µs

- 0.9 2

Operating Parameters

Operating voltage V

Undervoltage shutdown of charge pump

T

= -40...+85 °C

j

T

= 150 °C

j

Undervoltage restart of charge pump V

Standby current

T

= -40...+85 °C, VIN = low

j

Tj = +150 °C 2), VIN = low

Leakage output current (included in I

bb(off)

)

bb(on

V

bb(under)

bb(u c

I

bb(off)

I

L(off)

6 - 52 V

-

- 4 5.5

-

- - 5

VIN = low

Operating current

I

GND

- 0.8 2 mA

VIN = high

1

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. (see page 17) 2

higher current due temperature sensor

-

4

5.5

15

18

µA

Page 4

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BTS 452 R

j

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at Tj = -40...+150°C, V

Protection Functions

= 12..42V, unless otherwise specified min. typ. max.

bb

1)

Initial peak short circuit current limit (pin 3 to 5)

T

= -40 °C, Vbb = 20 V, tm = 150 µs

j

T

= 25 °C

j

T

= 150 °C

j

T

= -40...+150 °C, Vbb > 40 V , ( see page 12 )

j

Repetitive short circuit current limit

Tj = Tjt (see timing diagrams)

Vbb < 40V

Vbb > 40V

Output clamp (inductive load switch off)

at V

= Vbb - V

OUT

ON(CL)

,

Ibb = 4 mA

Overvoltage protection 3)

Ibb = 4 mA

I

L(SCp)

I

L(SCr)

V

ON(CL)

V

bb(AZ)

-

4

-

6.5

-

52)

6

4.5

A

9

-

59 63 - V

62 - -

Thermal overload trip temperature T

Thermal hysteresis ∆T

t

150 - - °C

- 10 - K

Reverse Battery

Reverse battery

Drain-source diode voltage (V

T

= 150 °C

j

1

Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation . 2

not subject to production test, specified by design 3

see also V

4

Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has

to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation! Input current has to be limited (see max. ratings page 3).

ON(CL)

4)

OUT

in circuit diagram on page 8

> Vbb)

-V

bb

ON

- - 52 V

- 600 - mV

Page 5

2004-01-27

BTS 452 R

)

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at Tj = -40...+150°C, V

= 12..42V, unless otherwise specified min. typ. max.

bb

Input and Status feedback

Input turn-on threshold voltage V

Input turn-off threshold voltage V

Input threshold hysteresis ∆V

Off state input current

I

IN(off)

VIN = 0.7 V

On state input current

I

IN(on)

VIN = 5 V

Status output (open drain), Zener limit voltage

V

IST = 1.6 mA

Status output (open drain), ST low voltage

T

= -40...+25 °C, IST = 1.6 mA

j

T

= 150 °C, IST = 1.6 mA

j

Status invalid after positive input slope 1)

V

t

d(ST+)

Vbb = 20 V

IN(T+

IN(T-

IN(T

ST(high)

ST(low)

- - 2.2 V

0.8 - -

- 0.4 -

1 - 25 µA

3 - 25

5.4 6.1 - V

-

0.4

0.6

- 120 160 µs

Status invalid after negative input slope

1)

t

Input resistance (see page 8) R

Diagnostic Characteristics

Short circuit detection voltage V

3)

2)

V

R

Open load detection voltage

Internal output pull down

( see page 9 and 14 )

V

OUT(OL)

1

no delay time after overtemperature switch off and short circuit in on-state 2

External pull up resistor required for open load detection in off state. 3

not subject to production test, specified by design

= 4 V

d(ST-

I

OUT(SC

OUT(OL

O

- 250 400

2 3.5 5 kΩ

- 2.8 - V

- 3 4

65 200 750 kΩ

Page 6

2004-01-27

INFINEON BTS 452 R User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual