INFINEON BTS 443 P DATA SHEET

PROFET® Data Sheet BTS 443 P

Smart Highside Power Switch

Reversave

•

Reverse battery protection by self turn on of

Product Summary Operating voltage

V

bb(on)

power MOSFET

On-state resistance RON 16

Features

•

Short circuit protection

•

Current limitation

•

Overload protection

•

Thermal shutdown

•

Overvoltage protection (including load dump)

•

Loss of ground protection

•

Loss of V

charged inductive loads)

•

Very low standby current

•

Fast demagnetisation of inductive loads

•

Electrostatic discharge (ESD) protection

•

Optimized static electromagnetic compatibility (EMC)

protection (with external diode for

bb

Load current (ISO) I Current limitation

Package

TO-252-5-1

L(ISO)

I

L(SCr)

Diagnostic Function

•

Proportional load current sense (with defined fault signal during thermal shutdown)

Application

•

Power switch with current sense diagnostic feedback for 12V and 24 V DC grounded loads

•

All types of resistive, capacitive and inductive loads (no PWM with inductive loads)

•

Replaces electromechanical relays, fuses and discrete circuits

5.0 ... 36 V

mΩ

25 A 65 A

General Description

N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS

Voltage

source

Voltage

sensor

2

IN

ESD

I

IN

V

IN

V

IS

Logic

I

IS

4

R

IS



chip on chip technology. Providing embedded protective functions.

3 & Tab

+ V

bb

OUT



1, 5

I

L

Load GND

Overvoltage

protection

Charge pump

Level shifter

Rectifier

Current

limit

Gate

protection

Limit for

unclamped

ind. loads

Output

Voltage

detection

Temperature

sensor

R

bb

Current

Sense

PROFET

Load

Logic GND

Infineon Technologies AG Page 1 of 13 2003-Oct-01

Data Sheet BTS 443 P

Pin Symbol Function

1 OUT O

2 IN I Tab/(3) Vbb + 4 IS S

5 OUT O

*) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy

Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4) Vbb 36 V Supply voltage for full short circuit protection (see also diagram on page 9) Tj=-40...150 °C: Load dump protection V

LoadDump

RI= 2 Ω, RL= 2.7 Ω, td= 200 ms, IN= low or high Load current (Short-circuit current, see page 4) IL self-limited A Operating temperature range Storage temperature range Power dissipation (DC) TC ≤ 25°C P Inductive load switch-off energy dissipation,

single pulse U=12V, I=10A, L=3mH Tj=150 °C: EAS 0.15 J Electrostatic discharge capability (ESD)

(Human Body Model) acc. ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF

Current through input pin (DC) Current through current sense pin (DC)

see internal circuit diagrams page 7

Output to the load. The pin 1 and 5 must be shorted with each other especially in high current applications!*) Input, activates the power switch in case of short to ground

Positive power supply voltage, the tab is shorted to this pin. Diagnostic feedback providing a sense current proportional to the load

current; high current on failure (see Truth Table on page 6) Output to the load. The pin 1 and 5 must be shorted with each other especially in high current applications!*)

)

1

= UA + Vs, UA = 13.5 V

Vbb 24

2

V

Load dump

Tj T

stg

42 W

tot

V

ESD

)

60 V

-40 ...+150

-55 ...+150

4.0

I

IN

IIS

+15, -100 +15, -100

V

°C

kV

mA

1 ) Short circuit is tested with 100mΩ and 20µH

2)

V

Load dump

is set-up without the DUT connected to the generator per ISO 7637-1 and DIN 40839

Infineon Technologies AG Page 2 of 13 2003-Oct-01

Data Sheet BTS 443 P

Thermal Characteristics

Parameter and Conditions Symbol Values Unit

min typ max

3

)

Thermal resistance chip - case:

junction - ambient (free air): R

SMD version, device on PCB4):

R

thJC thJA

-- -- 1.5

--

80 --

K/W

-- 45 --

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at Tj= -40°C...150°C, Vbb = 12 V unless otherwise specified

min typ max

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to pin 1,5) VIN= 0, IL = 5 A Tj=25 °C: Tj=150 °C:

Output voltage drop limitation at small load currents (Tab to pin 1,5) Tj=-40...150 °C:

Nominal load current (Tab to pin 1,5) ISO Proposal: TC=85°C, VON≤0.5V, T

≤150°C

j

SMD 4): TA=85°C, VON≤0.5V, Tj≤150°C Turn-on time IIN to 90% V Turn-off time IIN to 10% V

OUT OUT

RL = 2,5Ω, Tj=-40...150 °C Slew rate on 10 to 30% V

OUT

, R

= 2.5 Ω, Tj=-40...150 °C

L

Slew rate off 70 to 40% V

, RL = 2.5 Ω, Tj=-40...150 °C

OUT

: :

RON

V

ON(NL)

I

L(ISO)

I

L(nom)

ton t

off

dV /dt

-dV/dt

--

13 25

16 31

-- 50 -- mV

21

6.2

150

70

0.1 -- 1 V/µs

on

0.1 -- 1 V/µs

off

25

7.6

--

410 410

mΩ

A

µs

3)

Thermal resistance R

4)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

connection. PCB is vertical without blown air.

case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!

thCH

2

(one layer, 70µm thick) copper area for Vbb

Infineon Technologies AG Page 3 of 13 2003-Oct-01

Data Sheet BTS 443 P

Parameter and Conditions Symbol Values Unit

at Tj= -40°C...150°C, Vbb = 12 V unless otherwise specified

min typ max

Operating Parameters

Operating voltage (VIN=0V) V Undervoltage shutdown 5) V Undervoltage restart of charge pump (VIN=0V)

Overvoltage protection Ibb=15 mA Standby current Tj=-40...+25°C: IIN=0 T

5.0 -- 36 V

bb(on)

1.5 3.0 4.5 V

bIN(u)

V

6)

V

3.0 4.5 6.0 V

bb(ucp)

61

Z,IN

I

--

bb(off)

=150°C:

j

--

68

2 4

Protection Functions 7)

Short circuit current limit (Tab to pin 1,5) VON=8V, time until limitation max. 300µs

Repetitive short circuit current limit, T Output clamp (inductive load switch off)

at V

I

= 40 mA

L

= Vbb - V

OUT

(e.g. overvoltage)

ON(CL)

)

8

=-40°C:

Tj

=25°C:

Tj

=+150°C:

Tj

j

= T

jt

I

35

L(SC)

35 35

-- 65 -- A

L(SCr)

V

ON(CL)

38

75 65 65

42 48 V

Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis

∆

Tjt -- 10 -- K

Reverse Battery

-- V

5 8

110 110 125

µA

A

Reverse battery voltage -Vbb -- -- 20 V On-state resistance (pin 1,5 to pin 3)

Vbb= - 8V, VIN= 0, IL = -5 A, RIS = 1 kΩ, Tj=25 °C: Vbb= -12V, VIN= 0, IL = -5 A, RIS = 1 kΩ, Tj=25 °C:

Tj=150 °C:

R

ON(rev)

--

-16 25

22

mΩ 19 32

Integrated resistor in Vbb line Rbb -- 200 -- Ω

5)

VbIN=Vbb-VIN see diagram on page 11.

6)