INFINEON BTS 441 T User Manual

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BTS 441 T

Smart Highside Power Switch
One Channel: 20mΩ

Product Summary Package

On-state Resistance RON
Operating Voltage V
Nominal load current I
Current limitation I

bb(on)
L(ISO)
L(lim)

General Description

• N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically
integrated in Smart SIPMOS® technology.

• Providing embedded protective functions.

20mΩ

4.75 ... 41V

21A

65A

TO-220-5-11 TO-263-5-2 TO-220-5-12

Standard SMD Straight

Application

• µC compatible power switch for 5V, 12 V and 24 V DC applications

• All types of resistive, inductive and capacitve loads

• Most suitable for loads with high inrush currents, so as lamps

• Replaces electromechanical relays, fuses and discrete circuits

Basic Funktions

• Very low standby current

• Optimized static electromagnetic compatibility (EMC)

• µC and CMOS compatible

• Fast demagnetization of inductive loads

• Stable behaviour at undervoltage

Protection Functions

• Short circuit protection

• Current limitation

• Overload protection

• Thermal shutdown

• Overvoltage protection (including load dump) with external

GND-resistor

• Reverse battery protection with external GND-resistor

• Loss of ground and loss of Vbb protection

• Electrostatic discharge (ESD) protection

IN

Vbb

Logic

with

protection

functions

PROFET

OUT

Load

GND

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BTS 441 T

p

Functional diagram

IN

overvoltage

rotection

internal

voltage supply

ESD

logic

gate

control

+

charge

pump

temperature

sensor

current limit

clamp for

inductive load

VBB

OUT

LOAD

GND

PROFET

Pin Definitions and Functions

Pin

Symbol Function

1

2 IN

3 Vbb

GND

Input, activates the power switch in

case of logical high signal

Positive power supply voltage

The tab is shorted to pin 3

4 N.C.

5 OUT

Tab Vbb

Positive power supply voltage

The tab is shorted to pin 3

Logic ground

Not connected

Output to the load

Pin configuration

(top view)

Tab = V

BB

1 2 (3) 4 5

GND IN NC OUT

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BTS 441 T

Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4) Vbb 43 V
Supply voltage for full short circuit protection

T

=-40 ...+150°C

j Start

Load dump protection1) V

2)

R

= 2 Ω, RL= 0,5 Ω, td= 200 ms, IN= low or high

I

LoadDump

= VA + Vs, VA = 13.5 V

Load current (Short-circuit current, see page 5) IL self-limited A
Operating temperature range
Storage temperature range
Power dissipation (DC) ; TC≤25°C P
Maximal switchable inductance, single pulse

V

= 12V, T

bb

(see diagram, p.8) I

= 150°C, TC = 150°C const.

j,start

= 21 A, RL= 0 Ω: E

L(ISO)

4)

AS

=0.7J:

Electrostatic discharge capability (ESD) IN:
(Human Body Model) Out to all other pins shorted:

acc. MIL-STD883D, method 3015.7 and
ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF

Input voltage (DC) VIN -10 ... +16 V
Current through input pin (DC)

see internal circuit diagrams page 7

Thermal resistance chip - case:
junction - ambient (free air):
SMD version, device on pcb5): ≤ 33

Vbb 34 V
V

Load dump

T

j

T

stg

125 W

tot

3)

60 V

-40 ...+150

-55 ...+150

°C

ZL 2.1 mH

V

1.0

ESD

kV

8.0

I

IN

±2.0 mA

R
R

thJC
thJA

≤ 1

≤ 75

K/W

1)

Supply voltages higher than V

resistor in the GND connection. A resistor for the protection of the input is integrated.

2)

RI = internal resistance of the load dump test pulse generator

3)

V

Load dump

4)

E

AS

5)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb

connection. PCB is vertical without blown air.

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

is the maximum inductive switch off energy

require an external current limit for the GND pin, e.g. with a 150 Ω

bb(AZ)

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BTS 441 T

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified

Load Switching Capabilities and Characteristics

min typ max

On-state resistance (V

IL = 2 A Vbb≥7V
T

see diagram page 9

Tj=25 °C:

:

Nominal load current (pin 3 to 5)

‘ISO 10483-1, 6.7:V

=0.5V, TC=85°C

ON

Output current (pin 5) while GND disconnected or

6)

GND pulled up

see diagram page 7

, Vbb=30 V, VIN= 0,

Turn-on time IN

Turn-off time IN

(pin3) to OUT (pin5));

bb

to 90% V

to 10% V

=150 °C:

j

OUT

OUT

:

:

RON

I
I

t
t

L(ISO)

L(GNDhigh)

on
off

RL = 12 Ω,
Slew rate on
10 to 30% V
Slew rate off

70 to 40% V

, R

OUT

OUT

= 12 Ω,

L

, RL = 12 Ω,

dV /dton 0.1 -- 1 V/µs

-dV/dt

Operating Parameters

Operating voltage Tj =-40°C

V

Tj =+25°C
Tj =+105°C

6)

Tj =+150°C
Overvoltage protection

I

= 40 mA Tj =+25...+150°C:

bb

Standby current (pin 3)
VIN=0 see diagram page 9 T

Off-State output current (included in I

VIN=0

Operating current (Pin 1)9), VIN=5 V,

7)

Tj =-40°C:

8)

Tj=-40...+25°C:

Tj=+105°C6):

=+150°C:

j

)

bb(off)

V
I

bb(off)

I

L(off)

I

GND

--

15
28

20
37

17 21 -- A

-- -- 2 mA

40

0.1 -- 1 V/µs

off

4.75

bb(on)

40

4.75

4.75

5.0

bb(AZ)

41
43

--

--

--

90

110

--

--

--

--

--

47

5

--

--

200
250

41
43
43
43

-­52
10

10
25

-- 1.5 10 µA

-- 2 4 mA

mΩ

µs

V

V

µA

6)

not subject to production test, specified by design

7)

see also V

8)

Measured with load, typ. 40 µA without load.

9)

Add IIN, if VIN>5.5 V

in table of protection functions and circuit diagram page 7

ON(CL)

Infineon Technologies AG 4 2003-Oct-01