INFINEON BTS426L1 User Manual

PROFET

Smart Highside Power Switch

Features

•

Overload protection

•

Current limitation

•

Short circuit protection

•

Thermal shutdown

•

Overvoltage protection (including load dump)

•

Fast demagnetization of inductive loads

•

Reverse battery protection

•

Undervoltage and overvoltage shutdown with auto-restart

1

)

and hysteresis

•

Open drain diagnostic output

•

Open load detection in ON-state

•

CMOS compatible input

•

Loss of ground and loss of V

•

Electrostatic discharge (ESD) protection

protection

bb

Application

•

µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads

•

All types of resistive, inductive and capacitve loads

•

Replaces electromechanical relays, fuses and discrete circuits

Product Summary

Overvoltage protection V

Operating voltage

V

43 V

bb(AZ)

5.0 ... 34 V

bb(on)

On-state resistance RON 60

Load current (ISO) I

Current limitation I

7.0 A

L(ISO)

16 A

L(SCr)

TO-220AB/5

5

1

Standard

5

Straight leads

®

BTS426L1

1

SMD

mΩ

5

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically

integrated in Smart SIPMOS

IN

2

4

ST

ESD



technology. Providing embedded protective functions.

Voltage

source

V

Voltage

sensor

Logic

Logic

Overvoltage

protection

Charge pump

Level shifter

Rectifier

GND

Current

limit

unclamped

Open load

Short to Vbb

Gate

protection

Limit for

ind. loads

detection

1

Signal GND

Temperature

sensor

PROFET

R

+ V

O

GND

bb

OUT



Load GND

3

5

Load

1)

With external current limit (e.g. resistor R

=150 Ω) in GND connection, resistor in series with ST connection, reverse load

GND

current limited by connected load.

Semiconductor Group 1 of 14 2003-Oct-01

BTS426L1

Pin Symbol Function

1 GND - Logic ground

2 IN I Input, activates the power switch in case of logical high signal

3 Vbb + Positive power supply voltage,

the tab is shorted to this pin

4 ST S Diagnostic feedback, low on failure

5 OUT

O Output to the load

(Load, L)

Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 3) Vbb 43 V

Supply voltage for full short circuit protection

T

=-40 ...+150°C

j Start

Load dump protection2) V

3)

R

= 2 Ω, RL= 1.7 Ω, t

I

LoadDump

= 200 ms, IN= low or high

d

= UA + Vs, UA = 13.5 V

Vbb 34 V

4

V

Load dump

)

60 V

Load current (Short circuit current, see page 4) IL self-limited A

Operating temperature range

Storage temperature range

Power dissipation (DC), T

≤ 25 °C P

C

Inductive load switch-off energy dissipation, single pulse
V

= 12V, T

bb

IL = 7.0 A, Z

= 150°C, TC = 150°C const.

j,start

= 24 mH, 0 Ω:

L

Electrostatic discharge capability (ESD) IN:
(Human Body Model) all other pins:

Tj

T

stg

75 W

tot

-40 ...+150

-55 ...+150

°C

EAS 0.74 J

V

1.0

ESD

kV

2.0

acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993

Input voltage (DC) VIN -10 ... +16 V

Current through input pin (DC)

Current through status pin (DC)

see internal circuit diagrams page 6

Thermal Characteristics

IIN

IST

±2.0
±5.0

mA

Parameter and Conditions Symbol Values Unit

min typ max

Thermal resistance chip - case:

junction - ambient (free air):

SMD version, device on PCB5):

2)

Supply voltages higher than V

GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the protection of the input is integrated.

3)

RI = internal resistance of the load dump test pulse generator

4)

V

Load dump

5)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

without blown air.

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

require an external current limit for the GND and status pins, e.g. with a 150 Ω resistor in the

bb(AZ)

2

(one layer, 70µm thick) copper area for V

R

thJC

R

thJA

--

--

--

--

34

connection. PCB is vertical

bb

1.67

K/W

75

Semiconductor Group 2 2003-Oct-01

BTS426L1

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C, V

= 12 V unless otherwise specified

bb

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5)

IL = 2 A Tj=25 °C:

RON

min typ max

--

50

60

mΩ

Tj=150 °C:

Nominal load current, ISO Norm (pin 3 to 5)

VON = 0.5 V, TC = 85 °C

Output current (pin 5) while GND disconnected or GND pulled

I

L(ISO)

I

L(GNDhigh)

5.8 7.0

-- -- 10 mA

100

120

up, Vbb=30 V, VIN= 0, see diagram page 7

Turn-on time IN to 90% V

Turn-off time IN to 10% V

R

= 12 Ω, T

L

=-40...+150°C

j

Slew rate on

10 to 30% V

OUT

, R

L

= 12 Ω, T

=-40...+150°C

j

Slew rate off
70 to 40% V

OUT

, R

L

= 12 Ω, T

=-40...+150°C

j

Operating Parameters

Operating voltage6) Tj =-40...+150°C: V

Undervoltage shutdown Tj =-40...+150°C: V

Undervoltage restart Tj =-40...+25°C:

:

ton

OUT

:

t

OUT

off

dV /dt

-dV/dt

V

0.1 -- 1 V/µs

on

0.1 -- 1 V/µs

off

5.0 -- 34 V

bb(on)

3.5 -- 5.0 V

bb(under)

-- -- 5.0

bb(u rst)

80

80

200

230

400

450

Tj =+150°C:

Undervoltage restart of charge pump

V

-- 5.6 7.0 V

bb(ucp)

see diagram page 12 Tj =-40...+150°C:

Undervoltage hysteresis ∆V

Overvoltage shutdown Tj =-40...+150°C: V

Overvoltage restart Tj =-40...+150°C: V

Overvoltage hysteresis T

Overvoltage protection

7)

Tj =-40...+150°C:

bb(under)

= V

bb(u rst)

- V

=-40...+150°C: ∆V

j

bb(under)

∆V

-- 0.2 -- V

bb(under)

34 -- 43 V

bb(over)

33 -- -- V

bb(o rst)

-- 0.5 -- V

bb(over)

V

42 47 -- V

bb(AZ)

Ibb=40 mA

Standby current (pin 3)

VIN=0 T

T

Leakage output current (included in I

VIN=0

bb(off)

)

=-40...+25°C:

j

= 150°C:

j

Operating current (Pin 1)8), VIN=5 V, Tj =-40...+150°C

I

bb(off)

I

-- -- 12 µA

L(off)

I

-- 1.8 3.5 mA

GND

--

--

10

12

-- A

µs

V

7.0

25

µA

28

6)

At supply voltage increase up to Vbb= 5.6 V typ without charge pump, V

7)

See also V

8)

Add I

, if IST > 0, add IIN, if VIN>5.5 V

ST

in table of protection functions and circuit diagram page 7.

ON(CL)

OUT

≈V

bb

- 2 V

Semiconductor Group 3 2003-Oct-01

BTS426L1

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C, V

= 12 V unless otherwise specified

bb

min typ max

Protection Functions9)

Initial peak short circuit current limit (pin 3 to 5) I

=-40°C:

Tj

=25°C:

Tj

=+150°C:

Tj

Repetitive short circuit shutdown current limit I

L(SCp)

21

15
11

L(SCr)

32
25
17

Tj = Tjt (see timing diagrams, page 10) -- 16 -- A

Output clamp (inductive load switch off)
at V

= Vbb - V

OUT

I

ON(CL)

= 40 mA: V

L

ON(CL)

41

47 53 V

Thermal overload trip temperature Tjt 150 -- -- °C

Thermal hysteresis

Reverse battery (pin 3 to 1)

Reverse battery voltage drop (V

10)

-Vbb -- -- 32 V

)

> V

out

bb

IL = -4 A Tj=150 °C: -V

∆

Tjt -- 10 -- K

ON(rev)

--

610

Diagnostic Characteristics

Open load detection current Tj=-40 °C:

(on-condition) Tj=25 ..150°C:

Open load detection voltage

11)

(off-condition) Tj=-40..150°C: V

Internal output pull down

(pin 5 to 1), V

=5 V, Tj=-40..150°C

OUT

I

20

L (OL)

2 3 4 V

OUT(OL)

RO

10

4

--

--

10 30 kΩ

43
35
24

--

850
750

A

mV

mA

9)

Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault

conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive
operation.

10)

Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by

the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop
across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status
currents have to be limited (see max. ratings page 2 and circuit page 7).

11)

External pull up resistor required for open load detection in off state.

Semiconductor Group 4 2003-Oct-01

BTS426L1

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C, V

Input and Status Feedback

= 12 V unless otherwise specified

bb

12)

Input resistance

Tj=-40..150°C, see circuit page 6

Input turn-on threshold voltage Tj =-40..+150°C: V

Input turn-off threshold voltage Tj =-40..+150°C: V

Input threshold hysteresis ∆ V

Off state input current (pin 2), VIN = 0.4 V,

min typ max

R

2.5 3.5 6 kΩ

I

1.7 -- 3.5 V

IN(T+)

1.5 -- -- V

IN(T-)

-- 0.5 -- V

IN(T)

I

1 -- 50 µA

IN(off)

Tj =-40..+150°C

On state input current (pin 2), VIN = 3.5 V,

I

20 50 90 µA

IN(on)

Tj =-40..+150°C

Delay time for status with open load after switch off

t

d(ST OL4)

100 520 1000 µs

(see timing diagrams, page 11), Tj =-40..+150°C

Status invalid after positive input slope

(open load) Tj=-40 ... +150°C:

t

d(ST)

-- 250 600 µs

Status output (open drain)

Zener limit voltage T

ST low voltage Tj =-40...+25°C, IST = +1.6 mA:

T

=-40...+150°C, IST = +1.6 mA:

j

= +150°C, IST = +1.6 mA:

j

V

ST(high)

V

ST(low)

5.4

--

--

6.1

--

--

--

0.4

0.6

V

12)

If a ground resistor R

is used, add the voltage drop across this resistor.

GND

Semiconductor Group 5 2003-Oct-01