INFINEON BTS 410 E2 User Manual

PROFET

Smart Highside Power Switch

®

BTS 410 E2

Features

•

Overload protection

•

Current limitation

•

Short circuit protection

•

Thermal shutdown

•

Overvoltage protection (including load dump)

•

Fast demagnetization of inductive loads

•

Reverse battery protection

•

Undervoltage and overvoltage shutdown with

1

)

auto-restart and hysteresis

•

Open drain diagnostic output

•

Open load detection in ON-state

•

CMOS compatible input

•

Loss of ground and loss of V

•

Electrostatic discharge (ESD) protection

protection

bb

Application

•

µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads

•

All types of resistive, inductive and capacitve loads

•

Replaces electromechanical relays, fuses and discrete circuits

Product Summary Overvoltage protection V Operating voltage

V

65 V

bb(AZ)

4.7 ... 42 V

bb(on)

On-state resistance RON 220 Load current (ISO) I Current limitation I

1.8 A

L(ISO)

5A

L(SCr)

TO-220AB/5

Standard

5

Straight leads

5

1

SMD

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS



technology. Providing embedded protective functions.

mΩ

5

+ V

bb

Voltage

source

V

Logic

Voltage

sensor

IN

2

ESD

4

ST

Logic

Overvoltage

protection

Charge pump

Level shifter

Rectifier

GND

Current

limit

unclamped

Open load

Short circuit

Gate

protection

Limit for

ind. loads

detection

Temperature

sensor

PROFET

3

OUT

5

Load



1

Signal GND

Load GND

1)

With external current limit (e.g. resistor R

=150 Ω) in GND connection, resistors in series with IN and ST

GND

connections, reverse load current limited by connected load.

Semiconductor Group 1 of 16 2003-Oct-01

BTS 410 E2

Pin Symbol Function

1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3 Vbb + Positive power supply voltage,

the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5 OUT

O Output to the load

(Load, L)

Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 3) Vbb 65 V

4

Load dump protection2) V

3)

R

= 2 Ω, RL= 6.6 Ω, td= 400 ms, IN= low or high

I

LoadDump

= UA + Vs, UA = 13.5 V

V

Load dump

)

100 V

Load current (Short circuit current, see page 4) IL self-limited A Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C P Inductive load switch-off energy dissipation, single pulse

V

= 12V, T

bb

= 150°C, TC = 150°C const.

j,start

IL = 1.8 A, ZL = 2.3 H, 0 Ω: Electrostatic discharge capability (ESD) IN:

(Human Body Model) all other pins:

Tj T

stg

50 W

tot

-40 ...+150

-55 ...+150

°C

EAS 4.5 J V

1

ESD

kV

2

acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 Input voltage (DC) VIN -0.5 ... +6 V Current through input pin (DC) Current through status pin (DC)

see internal circuit diagrams page 6

Thermal Characteristics

IIN I

ST

±5.0 ±5.0

mA

Parameter and Conditions Symbol Values Unit

min typ max Thermal resistance chip - case:

junction - ambient (free air):

SMD version, device on PCB5):

2)

Supply voltages higher than V

150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the protection of the input is integrated.

3)

RI = internal resistance of the load dump test pulse generator

4)

V

Load dump

5)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

connection. PCB is vertical without blown air.

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

bb(AZ)

require an external current limit for the GND and status pins, e.g. with a

R

thJC

R

thJA

2

(one layer, 70µm thick) copper area for Vbb

--

-- 35 --

2.5

K/W

75

Semiconductor Group 2 2003-Oct-01

BTS 410 E2 Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C, Vbb = 12 V unless otherwise specified

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5) IL = 1.6 A Tj=25 °C:

RON

min typ max

-- 190

220

mΩ Tj=150 °C: Nominal load current, ISO Norm (pin 3 to 5)

VON = 0.5 V, TC = 85 °C

Output current (pin 5) while GND disconnected or

I

L(ISO)

I

L(GNDhigh)

1.6

-- -- 1 mA GND pulled up, Vbb=30 V, VIN= 0, see diagram page 7, Tj =-40...+150°C

Turn-on time IN to 90% V Turn-off time IN R

= 12 Ω, Tj =-40...+150°C

L

to 10% V

Slew rate on 10 to 30% V

OUT

, R

= 12 Ω, Tj =-40...+150°C

L

Slew rate off 70 to 40% V

, RL = 12 Ω, Tj =-40...+150°C

OUT

OUT OUT

:

ton

:

t

off

dV /dton -- -- 3 V/µs

-dV/dt

-- -- 6 V/µs

off

12

5

Operating Parameters

Operating voltage 6) Tj =-40...+150°C: V Undervoltage shutdown Tj =25°C:

V

Tj =-40...+150°C: Undervoltage restart Tj =-40...+150°C: V Undervoltage restart of charge pump

V

4.7 -- 42 V

bb(on) bb(under)

2.9

2.7

-- -- 4.9 V

bb(u rst)

-- 5.6 6.0 V

bb(ucp)

see diagram page 13 Undervoltage hysteresis

∆V

bb(under)

= V

bb(u rst)

- V

bb(under)

Overvoltage shutdown Tj =-40...+150°C: V Overvoltage restart Tj =-40...+150°C: V Overvoltage hysteresis Tj =-40...+150°C: ∆V Overvoltage protection

7)

Tj =-40...+150°C:

∆V

bb(over) bb(o rst)

V

bb(AZ)

bb(under)

-- 0.1 -- V

42 -- 52 V 40 -- -- V

-- 0.1 -- V

bb(over)

65 70 -- V Ibb=4 mA Standby current (pin 3) T VIN=0 T

Leakage output current (included in I

VIN=0

Operating current (Pin 1)8), VIN=5 V,

=-40...+150°C

Tj

6)

At supply voltage increase up to V

7)

Meassured without load. See also V

=-40...+25°C:

j

= 150°C:

j

)

bb(off)

= 5.6 V typ without charge pump, V

bb

in table of protection functions and circuit diagram page 7.

ON(CL)

I

bb(off)

I

-- -- 20 µA

L(off)

-- 1 2.1 mA

I

GND

--

≈Vbb - 2 V

OUT

390

440

1.8 -- A

--

125

--

10 18

85

4.5

4.7

15 25

µA

µs

V

Semiconductor Group 3 2003-Oct-01

BTS 410 E2

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C, Vbb = 12 V unless otherwise specified

min typ max

Protection Functions9)

Initial peak short circuit current limit (pin 3 to 5) ( max 450 µs if VON > V

T

ON(SC)

)

Tj =25°C: Tj =+150°C:

Repetitive overload shutdown current limit I

10)

=-40°C:

j

,

I

9

L(SCp)

--

-4

L(SCr)

12

--

VON= 8 V, Tj = Tjt (see timing diagrams, page 11) -- 5 -- A

Short circuit shutdown delay after input pos. slope V

ON

> V

, Tj =-40..+150°C:

ON(SC)

t

d(SC)

--

-- 450 µs

min value valid only, if input "low" time exceeds 60 µs Output clamp (inductive load switch off)

at V

I

= Vbb - V

OUT

ON(CL)

I

= 40 mA, Tj =-40..+150°C: V

L

= 1 A, Tj =-40..+150°C: -- -- 75

L

Short circuit shutdown detection voltage (pin 3 to 5) V

ON(CL)

ON(SC)

61

--

68 73 V

8.5 -- V Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis Reverse battery (pin 3 to 1)

11)

-Vbb -- -- 32 V

∆

Tjt -- 10 -- K

Diagnostic Characteristics

Open load detection current

(on-condition) Tj=-40 ..150°C:

I

L (OL)

2

-- 150

23 15

A

--

mA

8)

Add I

9)

Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation.

10)

Short circuit current limit for max. duration of t

11)

Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source

diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7).

, if IST > 0, add IIN, if VIN>5.5 V

ST

d(SC) max

=450 µs, prior to shutdown

Semiconductor Group 4 2003-Oct-01

BTS 410 E2

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C, Vbb = 12 V unless otherwise specified

Input and Status Feedback

12)

Input turn-on threshold voltage Tj =-40..+150°C: V Input turn-off threshold voltage Tj =-40..+150°C: V Input threshold hysteresis ∆ V Off state input current (pin 2), VIN = 0.4 V I On state input current (pin 2), VIN = 5 V I Status invalid after positive input slope (short circuit) Tj=-40 ... +150°C: Status invalid after positive input slope (open load) Tj=-40 ... +150°C:

min typ max

1.5 -- 2.4 V

IN(T+)

1.0 -- -- V

IN(T-)

-- 0.5 -- V

IN(T)

1 -- 30 µA

IN(off)

10 25 70 µA

IN(on)

t

d(ST SC)

-- -- 450 µs

t

d(ST)

300 -- 1400 µs

Status output (open drain) Zener limit voltage Tj =-40...+150°C, IST = +50 uA: ST low voltage Tj =-40...+150°C, IST = +1.6 mA:

V

ST(high)

V

ST(low)

5.0

--

6

--

0.4

--

V

12)

If a ground resistor R

is used, add the voltage drop across this resistor.

GND

Semiconductor Group 5 2003-Oct-01

INFINEON BTS 410 E2 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual