Product Summary
Overvoltage protection V
Operating voltage
V
43V
bb(AZ)
5.0 ... 34 V
bb(on)
On-state resistance RON 200
Load current (ISO) I
Current limitation I
2.3A
L(ISO)
4A
L(SCr)
TO-220AB/5
Standard
5
Straight leads
5
1
1
SMD
feedback for 12 V and 24 V DC grounded loads
•
All types of resistive, inductive and capacitve loads
•
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS
=150 Ω) in GND connection, resistor in series with ST
GND
connection, reverse load current limited by connected load.
limit
protectio
Limit for
unclampe
ind.
Open
Short to
detectio
Gate
PROFET
Temperatur
sensor
R
GND
+ V
O
bb
OUT
Load GND
3
5
Load
Infineon Technologies AG 1 2003-Oct-01
BTS409L1
Pin Symbol Function
1 GND - Logic ground
2 IN I Input, activates the power switch in case of logical high signal
3 Vbb + Positive power supply voltage,
the tab is shorted to this pin
4 ST S Diagnostic feedback, low on failure
5 OUT
O Output to the load
(Load, L)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 3) Vbb 43V
Supply voltage for full short circuit protection
T
=-40 ...+150°C
j Start
Load dump protection2)V
3)
R
= 2 Ω, RL= 5.3 Ω, td= 200 ms, IN= low or high
I
LoadDump
= UA + Vs, UA = 13.5 V
Vbb 34V
4
V
Load dump
)
60V
Load current (Short circuit current, see page 4) IL self-limitedA
Operating temperature range
Storage temperature range
Power dissipation (DC), TC ≤ 25 °C P
Inductive load switch-off energy dissipation, single pulse
V
=12V, T
bb
=150°C, TC =150°C const.
j,start
IL =2.3A, ZL=98mH, 0 Ω:
Electrostatic discharge capability (ESD) IN:
(Human Body Model) all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Tj
T
stg
18W
tot
-40 ...+150
-55 ...+150
°C
EAS 335mJ
V
1.0
ESD
kV
2.0
Input voltage (DC) VIN -10 ... +16V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
I
IN
I
ST
±2.0
±5.0
mA
Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
75
K/W
7
Thermal resistance chip - case:
junction - ambient (free air):
SMD version, device on PCB5):
2)
Supply voltages higher than V
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.
3)
RI = internal resistance of the load dump test pulse generator
4)
V
Load dump
5)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
connection. PCB is vertical without blown air.
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
require an external current limit for the GND and status pins, e.g. with a
bb(AZ)
R
thJC
R
thJA
2
(one layer, 70µm thick) copper area for Vbb
--
- 39
--
--
Infineon Technologies AG 2 2003-Oct-01
BTS409L1
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 1.8 A Tj=25 °C:
RON
min typ max
-- 160
200
mΩTj=150 °C:
Nominal load current, ISO Norm (pin 3 to 5)
Turn-on time IN to 90% V
Turn-off time IN to 10% V
OUT
OUT
:
ton
:
t
off
80
80
200
200
RL = 12 Ω, Tj =-40...+150°C
Slew rate on
10 to 30% V
OUT
, R
= 12 Ω, Tj =-40...+150°C
L
Slew rate off
70 to 40% V
, RL= 12 Ω, Tj =-40...+150°C
OUT
Operating Parameters
Operating voltage6)Tj =-40...+150°C: V
Undervoltage shutdown Tj =-40...+150°C: V
Undervoltage restart Tj =-40...+25°C:
dV /dton 0.1 -- 1V/µs
-dV/dt
bb(on)
bb(under)
V
bb(u rst)
0.1 -- 1V/µs
off
5.0 -- 34V
3.5 -- 5.0V
-- -- 5.0
Tj =+150°C:
Undervoltage restart of charge pump
V
bb(ucp)
-- 5.6 7.0V
see diagram page 12Tj =-40...+150°C:
Undervoltage hysteresis
∆V
bb(under)
= V
bb(u rst)
- V
bb(under)
Overvoltage shutdown Tj =-40...+150°C: V
Overvoltage restart Tj =-40...+150°C: V
Overvoltage hysteresis Tj =-40...+150°C:∆V
Overvoltage protection
7)
Tj =-40...+150°C:
∆V
bb(over)
bb(o rst)
V
bb(AZ)
bb(under)
-- 0.2 --V
34 -- 43V
33 -- --V
-- 0.5 --V
bb(over)
42 47--VIbb=40 mA
Standby current (pin 3)
I
VIN=0 T
T
Leakage output current (included in I
VIN=0
=-40...+25°C:
j
= 150°C:
j
)
bb(off)
Operating current (Pin 1)8), VIN=5 V,
=-40...+150°C
Tj
bb(off)
I
-- -- 12µA
L(off)
I
-- 1.8 3.5mA
GND
--
--
10
12
400
--A
400
400
7.0
23
28
µs
V
µA
6)
At supply voltage increase up to Vbb= 5.6 V typ without charge pump, V
7)
See also V
in table of protection functions and circuit diagram page 7.
ON(CL)
≈Vbb - 2 V
OUT
Infineon Technologies AG 3 2003-Oct-01
BTS409L1
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
min typ max
Protection Functions9)
Initial peak short circuit current limit (pin 3 to 5) I
T
=-40°C:
j
Tj =25°C:
Tj =+150°C:
Repetitive short circuit shutdown current limit I
5.5
L(SCp)
9.5
4.5
3
L(SCr)
7.5
5
13
11
A
7
Tj = Tjt (see timing diagrams, page 10) -- 4 --A
Output clamp (inductive load switch off)
at V
= Vbb - V
OUT
I
ON(CL)
= 40 mA: V
L
ON(CL)
41
47 53V
Thermal overload trip temperature Tjt 150 -- --°C
Thermal hysteresis
Reverse battery (pin 3 to 1)
10)
-Vbb -- -- 32V
∆
Tjt -- 10 --K
Diagnostic Characteristics
Open load detection current Tj=-40 °C:
(on-condition)Tj=25 ..150°C:
Open load detection voltage
T
11)
(off-condition)
=-40..150°C:
j
Internal output pull down
(pin 5 to 1), V
=5 V, Tj=-40..150°C
OUT
I
10
L (OL)
V
OUT(OL)
RO
--
10
--
200
150
mA
2 3 4V
4
10 30kΩ
8)
Add I
9)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
10)
Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 7).
11)
External pull up resistor required for open load detection in off state.
, if IST > 0, add IIN, if VIN>5.5 V
ST
Infineon Technologies AG 4 2003-Oct-01
BTS409L1
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Input and Status Feedback
12)
Input resistance
see circuit page 6
Input turn-on threshold voltage Tj =-40..+150°C: V
Input turn-off threshold voltage Tj =-40..+150°C: V
RI 2.53.5 6kΩ
IN(T+)
IN(T-)
Input threshold hysteresis ∆ V
Off state input current (pin 2), VIN = 0.4 V,
I
IN(off)
min typ max
1.7 -- 3.5V
1.5 -- --V
-- 0.5 --V
IN(T)
1 -- 50µA
Tj =-40..+150°C
On state input current (pin 2), VIN = 3.5 V,
I
20 50 90µA
IN(on)
Tj =-40..+150°C
Delay time for status with open load after switch
t
d(ST OL4)
100 400 800µs
off
(see timing diagrams, page 11), Tj =-40..+150°C
Status invalid after positive input slope
(open load) Tj=-40 ... +150°C:
t
d(ST)
-- 250 600µs
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA:
ST low voltage Tj =-40...+25°C, IST = +1.6 mA:
T
= +150°C, IST = +1.6 mA:
j
V
ST(high)
V
ST(low)
5.4
--
--
6.1
--
--
0.4
0.6
--
V
12)
If a ground resistor R
is used, add the voltage drop across this resistor.
GND
Infineon Technologies AG 5 2003-Oct-01
Loading...
+ 9 hidden pages
You need points to download manuals.
1 point = 1 manual.
You can buy points or you can get point for every manual you upload.