INFINEON BTS 282 Z User Manual
Speed TEMPFET
N-Channel
Enhancement mode
BTS 282 Z
Logic Level Input
Analog driving possible
Fast switching up to 1 MHz
Potential-free temperature sensor with
thyristor characteristics
Overtemperature protection
Avalanche rated
High current pinning
Type
BTS 282 Z 49 V
V
DS
R
DS(on)
6.5 m
1
7
VPT05754
1
1
Package Ordering Code
P-TO220-7-3 Q67060-S6004-A2
P-TO220-7-180 Q67060-S6005-A2
P-TO220-7-230 Q67060-S6007
D Pin 4 and TAB
7
VPT05167
7
G Pin 2
A Pin 3
Temperature
Sensor
K Pin 5
S Pin 1 + 6 + 7
Pin Symbol Function
1 S Source
2 G Gate
3 A Anode Temperature Sensor
4 D Drain
5 K Cathode Temperature Sensor
6 S Source
7 S Source
1
2000-09-11
BTS 282 Z
j
jp
g
Maximum Ratings
Parameter Symbol Value Unit
Drain source voltage
Drain-gate voltage, RGS = 20 k
Gate source voltage
Nominal load current (ISO 10483)
V
= 4.5 V, VDS 0.5 V, TC = 85 °C
GS
VGS = 10 V, VDS 0.5 V, TC = 85 °C
Continuous drain current 1)
TC = 100 °C, VGS = 4.5V
Pulsed drain current
Avalanche energy, single pulse
ID = 36 A, RGS = 25
Power dissipation
TC = 25 °C
Operating temperature
2)
V
DS
V
DGR
V
GS
I
D(ISO)
I
D
I
D puls
E
AS
P
tot
T
49
V
49
20
A
36
52
80
320
2 J
300 W
-40 ...+175 °C
Peak temperature ( single event )
Storage temperature
T
eak
T
st
200
-55 ... +150
DIN humidity category, DIN 40 040 E
IEC climatic category; DIN IEC 68-1 40/150/56
1
current limited by bond wire
2
Note: Thermal trip temperature of temperature sensor is below 175°C
2
2000-09-11
BTS 282 Z
)
)
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
junction - case:
Thermal resistance @ min. footprint
Thermal resistance @ 6 cm2 cooling area
Electrical Characteristics
Parameter
at Tj = 25°C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
V
= 0 V, ID = 0.25 mA
GS
Gate threshold voltage, VGS = VDS
I
= 240 µA
D
Zero gate voltage drain current
V
= 45 V, VGS = 0 V, Tj = -40 °C
DS
V
= 45 V, VGS = 0 V, Tj = 25 °C
DS
V
= 45 V, VGS = 0 V, Tj = 150 °C
DS
1)
R
R
R
thJC
th(JA
th(JA
- - 0.5 K/W
- - 62
- 33 40
Symbol Values Unit
min. typ. max.
V
(BR)DSS
V
GS(th)
I
DSS
49 - - V
1.2 1.6 2
-
-
-
-
0.1
-
0.1
1
100
µA
Gate-source leakage current
V
= 20 V, VDS = 0 V, Tj = 25 °C
GS
V
= 20 V, VDS = 0 V, Tj = 150 °C
GS
Drain-Source on-state resistance
V
= 4.5 V, ID = 36 A
GS
V
= 10 V, ID = 36 A
GS
1
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
connection. PCB mounted vertical without blown air.
I
GSS
-
-
R
DS(on)
-
-
2 (one layer, 70µm thick) copper area for drain
3
10
20
8.2
5.8
100
100
9.5
6.5
nA
m
2000-09-11
Electrical Characteristics
BTS 282 Z
Parameter
at Tj = 25°C, unless otherwise specified
Dynamic Characteristics
Forward transconductance
V
>2*ID*R
DS
DS(on)max
, ID = 80 A
Input capacitance
V
= 0 V, VDS = 25 V, f = 1 MHz
GS
Output capacitance
V
= 0 V, VDS = 25 V, f = 1 MHz
GS
Reverse transfer capacitance
V
= 0 V, VDS = 25 V, f = 1 MHz
GS
Turn-on delay time
V
= 30 V, VGS = 4.5 V, ID = 80 A,
DD
R
= 1.3
G
Rise time
V
= 30 V, VGS = 4.5 V, ID = 80 A,
DD
R
= 1.3
G
Symbol Values Unit
min. typ. max.
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
30 70 - S
- 3850 4800 pF
- 1090 1357
- 570 715
- 30 45 ns
- 37 56
Turn-off delay time
V
= 30 V, VGS = 4.5 V, ID = 80 A,
DD
R
= 1.3
G
Fall time
V
= 30 V, VGS = 4.5 V, ID = 80 A,
DD
R
= 1.3
G
Gate Charge Characteristics
Gate charge at threshold
V
= 40 V, ID=≥0,1 A , VGS = 0 to 1 V
DD
Gate charge at 5.0 V
V
= 40 V, ID = 80 A, VGS = 0 to 5 V
DD
Gate charge total
V
= 40 V, ID = 80 A, VGS = 0 to 10 V
DD
Gate plateau voltage
V
= 40 V, ID = 80 A
DD
t
d(off)
t
f
Q
g(th)
Q
g(5)
Q
g(total)
V
(plateau)
- 70 105
- 36 55
- 3.8 5.7 nC
- 92 138
- 155 232
- 3.4 - V
4
2000-09-11
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