INFINEON BSS 83P SMD Datasheet
SIPMOS Small-Signal-Transistor
BSS 83 P
Features
P-Channel
·
·
Enhancement mode
Avalanche rated
·
Logic Level
·
v/dt
d
·
Type
BSS 83 P
Maximum Ratings,at
rated
Package
PG-SOT-23
T
Parameter
Continuous drain current
T
= 25 °C
A
T
= 70 °C
A
Product Summary
Drain source voltage V
Drain-source on-state resistance
Continuous drain current A
Tape and Reel
L6327: 3000pcs/r.
= 25 °C, unless otherwise specified
j
Marking
YAs
Symbol
I
D
V
DS
R
I
D
Pin 1
G
Value
-0.33
-0.27
DS(on)
-0.33
3
PIN 2
S
-60
2
1
W
2
VPS05161
PIN 3
D
Unit
A
Pulsed drain current
T
= 25 °C
A
Avalanche energy, single pulse
I
= -0.33 A ,
D
V
DD
= -25 V,
R
GS
= 25
Avalanche energy, periodic limited by
Reverse diode dv/dt
I
= -0.33 A,
S
T
= 150 °C
jmax
V
= -48 V, di/dt = 200 A/µs,
DS
Gate source voltage
Power dissipation
T
= 25 °C
A
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
W
T
jmax
I
D puls
E
AS
E
AR
dv/d
V
GS
P
tot
,
T
j
-1.32
9.5
mJ
0.036
t
T
stg
6
±
20
0.36
-55...+150
kV/µs
V
W
°C
55/150/56
Rev. 1.2 Page 1
2006-12-05
Thermal Characteristics
Parameter Symbol UnitValues
min. max.typ.
Characteristics
BSS 83 P
Thermal resistance, junction - soldering point
R
thJS
-
150 K/W-
( Pin 3 )
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area
1)
Electrical Characteristics, at
T
= 25 °C, unless otherwise specified
j
R
thJA
-
-
-
-
350
300
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
= 0 V,
GS
Gate threshold voltage,
I
= -80 µA
D
I
= -250 µA
D
V
GS
=
V
DS
V
(BR)DSS
V
GS(th)
-60 - V-
-1 -1.5 -2
Zero gate voltage drain current
V
V
V
DS
DS
GS
= -60 V,
= -60 V,
= -20 V,
V
V
V
GS
GS
DS
= 0 V,
= 0 V,
= 0 V
T
= 25 °C
j
T
= 125 °C
j
Drain-source on-state resistance
V
= -4.5 V,
GS
I
= -0.27 A
D
Drain-source on-state resistance
V
= -10 V,
GS
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev. 1.2 Page 2
I
= -0.33 A
D
I
DSS
I
GSS
R
DS(on)
R
DS(on)
-
-
-0.1
-10
-1
-100
- -10 -100Gate-source leakage current
- 2 3
- 1.4 2
2006-12-05
µA
nA
W
BSS 83 P
Electrical Characteristics, at
Parameter
Dynamic Characteristics
Transconductance
2*
V
³
I
*
DS
R
D
DS(on)max
,
I
= -0.27 A
D
Input capacitance
V
V
= 0 V,
GS
= 0 V,
GS
V
= -25 V, f = 1 MHz
DS
V
= -25 V, f = 1 MHz
DS
Reverse transfer capacitance
V
= 0 V,
GS
V
= -25 V, f = 1 MHz
DS
Turn-on delay time
V
R
DD
= 43
G
= -30 V,
W
V
GS
= -4.5 V,
I
= -0.27 A,
D
T
= 25 °C, unless otherwise specified
j
Symbol Values Unit
min. typ. max.
g
fs
C
iss
C
oss
C
rss
t
d(on)
0.24
62 78 pF-
- 2419Output capacitance
-
- 35 ns23
S-0.47
97
Rise time
V
R
DD
= 43
G
= -30 V,
W
V
GS
= -4.5 V,
Turn-off delay time
V
R
DD
= 43
G
= -30 V,
W
V
GS
= -4.5 V,
Fall time
V
R
DD
= 43
G
= -30 V,
W
V
GS
= -4.5 V,
I
= -0.27 A,
D
I
= -0.27 A,
D
I
= -0.27 A,
D
t
r
t
d(off)
t
f
- 10671
-
56 70
- 61 76
Rev. 1.2 Page 3
2006-12-05
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