OptiMOS Buck converter series
BSS670S2L
Feature
• N-Channel
• Enhancement mode
• Logic Level
Type Package Ordering Code
BSS670S2L SOT 23 Q67042-S4052
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Marking
BSs
Product Summary
V
DS
R
DS(on)
I
D
SOT 23
55 V
650 mΩ
0.54 A
Gate
pin1
Drain
pin 3
Source
pin 2
Parameter Symbol Value Unit
Continuous drain current
TA=25°C
TA=70°C
Pulsed drain current
TA=25°C
Gate source voltage V
Power dissipation
TA=25°C
Operating and storage temperature T
I
D
I
D puls
GS
P
tot
, T
j
stg
0.54
0.43
2.2
± 20
0.36 W
-55... +150
A
V
°C
IEC climatic category; DIN IEC 68-1 55/150/56
Page 1
2003-03-17
BSS670S2L
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point
R
thJS
- - 290 K/W
(Pin 3)
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area
1)
R
thJA
-
-
-
-
350
300
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=1mA
Gate threshold voltage, VGS = V
ID=2.7µA
Zero gate voltage drain current
VDS=55V, VGS=0, Tj=25°C
VDS=55V, VGS=0, Tj=150°C
DS
V
(BR)DSS
V
GS(th)
I
DSS
55 - - V
1.2 1.6 2
-
-
0.01
10
1
100
µA
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=270mA
Drain-source on-state resistance
VGS=10V, ID=270mA
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
I
GSS
R
DS(on)
R
DS(on)
- 1 100 nA
- 430 825
- 346 650
mΩ
2003-03-17
BSS670S2L
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
fs
iss
oss
rss
d(on)
r
d(off)
f
gs
gd
g
(plateau)
VDS≥2*ID*R
ID=0.54A
VGS=0, VDS=25V,
f=1MHz
DS(on)max
,
0.6 1.2 - S
- 56 75 pF
- 13 18
- 7 10
VDD=30V, VGS=4.5V,
ID=0.54A,
RG=130Ω
- 9 14 ns
- 25 37
- 21 31
- 24 32
VDD=40V, ID=0.54A - 0.19 0.25 nC
- 0.57 0.86
VDD=40V, ID=0.54A,
VGS=0 to 10V
VDD=40V, ID=0.54A - 3.1 - V
- 1.7 2.26
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
I
I
S
SM
SD
rr
TA=25°C - - 0.38 A
- - 2.2
VGS=0, IF=0.54A - 0.8 1.1 V
VR=30V, I
rr
diF/dt=100A/µs
Page 3
F=lS
,
- 51 64 ns
- 22 28 nC
2003-03-17
BSS670S2L
1 Power dissipation
P
= f (TA)
tot
BSS670S2L
0.38
W
0.32
0.28
tot
0.24
P
0.2
0.16
0.12
0.08
0.04
2 Drain current
ID = f (TA)
parameter: VGS≥ 10 V
BSS670S2L
0.6
A
0.5
0.45
0.4
D
I
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0 20 40 60 80 100 120
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TA = 25 °C
1
BSS670S2L
10
A
/
DS
V
0
10
D
I
-1
10
-2
10
=
DS(on)
R
°C
160
T
A
0
0 20 40 60 80 100 120
°C
160
T
A
4 Transient thermal impedance
Z
= f (tp)
thJS
parameter : D = tp/T
BSS670S2L
3
10
K/W
I
D
tp = 23.0µs
DC
100 µs
1 ms
10 ms
thJS
Z
10
10
10
10
10
2
1
0
D = 0.50
0.20
-1
0.10
0.05
-2
single pulse
0.02
0.01
10
-3
10
-3
10
-7
-6
-5
-4
-3
-1
10
0
10
1
V
V
DS
10
2
10
10
10
10
10
Page 4
-2
10
s
t
2003-03-17
0
10
p
BSS670S2L
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
3
10V
6V
A
5V
2
D
I
1.5
1
0.5
0
0 0.5 1 1.5 2 2.5 3 3.5 4
4.5V
4V
3.5V
3V
V
V
DS
6 Typ. drain-source on resistance
R
parameter: V
DS(on)
1500
= f (ID)
GS
mΩ
1200
1100
1000
DS(on)
R
900
800
700
600
500
400
300
200
100
5
0
0 0.2 0.4 0.6 0.8
A
3.5V
4V
4.5V
5V
6V
10V
I
D
1.2
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x R
DS(on)max
parameter: tp = 80 µs
2.2
A
1.8
1.6
D
1.4
I
1.2
1
0.8
0.6
0.4
0.2
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: g
fs
2.2
S
1.8
1.6
fs
1.4
g
1.2
1
0.8
0.6
0.4
0.2
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V
V
GS
5
Page 5
0
0 0.4 0.8 1.2 1.6
A
I
D
2003-03-17
2.2
BSS670S2L
9 Drain-source on-state resistance
R
DS(on)
= f (Tj)
parameter : ID = 270 mA, VGS = 10 V
BSS670S2L
1900
mΩ
1600
1400
DS(on)
1200
R
1000
800
600
400
200
98%
typ
10 Typ. gate threshold voltage
V
= f (Tj)
GS(th)
parameter: VGS = V
2.5
DS
V
GS(th)
V
1.5
2 µA
1
0.5
10 µA
0
-60 -20 20 60 100
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz
3
10
pF
2
10
C
1
10
°C
180
T
j
0
-60 -20 20 60 100
°C
T
180
j
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
1
BSS670S2L
10
A
0
C
iss
C
oss
C
rss
10
F
I
-1
10
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0
10
0 5 10 15 20
-2
V
30
V
DS
Page 6
10
0 0.4 0.8 1.2 1.6 2 2.4
V
V
SD
2003-03-17
3
BSS670S2L
13 Typ. gate charge
V
GS
= f (Q
Gate
)
parameter: ID = 0.54 A pulsed
BSS670S2L
16
V
12
GS
10
V
8
6
4
2
0,2
V
DS max
0,8 V
DS max
14 Drain-source breakdown voltage
V
(BR)DSS
= f (Tj)
parameter: ID=10 mA
BSS670S2L
66
V
62
(BR)DSS
60
V
58
56
54
52
0
0 0.4 0.8 1.2 1.6 2
nC
Q
Gate
2.6
50
-60 -20 20 60 100
°C
180
T
j
Page 7
2003-03-17
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
BSS670S2L
Page 8
2003-03-17
This datasheet has been download from:
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