INFINEON BSS670S2L User Manual
OptiMOS Buck converter series
BSS670S2L
Feature
• N-Channel
• Enhancement mode
• Logic Level
Type Package Ordering Code
BSS670S2L SOT 23 Q67042-S4052
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Marking
BSs
Product Summary
V
DS
R
DS(on)
I
D
SOT 23
55 V
650 mΩ
0.54 A
Gate
pin1
Drain
pin 3
Source
pin 2
Parameter Symbol Value Unit
Continuous drain current
TA=25°C
TA=70°C
Pulsed drain current
TA=25°C
Gate source voltage V
Power dissipation
TA=25°C
Operating and storage temperature T
I
D
I
D puls
GS
P
tot
, T
j
stg
0.54
0.43
2.2
± 20
0.36 W
-55... +150
A
V
°C
IEC climatic category; DIN IEC 68-1 55/150/56
Page 1
2003-03-17
BSS670S2L
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point
R
thJS
- - 290 K/W
(Pin 3)
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area
1)
R
thJA
-
-
-
-
350
300
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=1mA
Gate threshold voltage, VGS = V
ID=2.7µA
Zero gate voltage drain current
VDS=55V, VGS=0, Tj=25°C
VDS=55V, VGS=0, Tj=150°C
DS
V
(BR)DSS
V
GS(th)
I
DSS
55 - - V
1.2 1.6 2
-
-
0.01
10
1
100
µA
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=270mA
Drain-source on-state resistance
VGS=10V, ID=270mA
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
I
GSS
R
DS(on)
R
DS(on)
- 1 100 nA
- 430 825
- 346 650
mΩ
2003-03-17
BSS670S2L
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
fs
iss
oss
rss
d(on)
r
d(off)
f
gs
gd
g
(plateau)
VDS≥2*ID*R
ID=0.54A
VGS=0, VDS=25V,
f=1MHz
DS(on)max
,
0.6 1.2 - S
- 56 75 pF
- 13 18
- 7 10
VDD=30V, VGS=4.5V,
ID=0.54A,
RG=130Ω
- 9 14 ns
- 25 37
- 21 31
- 24 32
VDD=40V, ID=0.54A - 0.19 0.25 nC
- 0.57 0.86
VDD=40V, ID=0.54A,
VGS=0 to 10V
VDD=40V, ID=0.54A - 3.1 - V
- 1.7 2.26
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
I
I
S
SM
SD
rr
TA=25°C - - 0.38 A
- - 2.2
VGS=0, IF=0.54A - 0.8 1.1 V
VR=30V, I
rr
diF/dt=100A/µs
Page 3
F=lS
,
- 51 64 ns
- 22 28 nC
2003-03-17
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