BSS169
SIPMOS® Small-Signal-Transistor
Features
• N-channel
• Depletion mode
Product Summary
V
DS
R
DS(on),max
I
DSS,min
100 V
12
0.09 A
• dv/dt rated
• Available with V
indicator on reel
GS(th)
• Pb-free lead-plating; RoHS compliant
PG-SOT-23
Type Package Pb-free Tape and Reel Information Marking
BSS169 PG-SOT-23 Yes L6327: 3000 pcs/reel SFs
Ω
BSS169 PG-SOT-23 Yes
Maximum ratings, at T
=25 °C, unless otherwise specified
j
L6906: 3000 pcs/reel sorted in V
GS(th)
Parameter Symbol Conditions Unit
T
Continuous drain current
Pulsed drain current
I
D
I
D,pulse
Reverse diode dv /dt dv/dt
Gate source voltage
V
GS
=25 °C
A
T
=70 °C
A
T
=25 °C
A
=0.17 A, V
I
D
DS
di/dt=200 A/µs,
T
=150 °C
j,max
=80 V,
ESD sensitivity (HBM) as per
MIL-STD 883
T
Power dissipation
Operating and storage temperature
P
tot
, T
T
j
stg
=25 °C
A
1)
bands
SFs
Value
0.17 A
0.14
0.68
6 kV/µs
±20 V
Class 0
0.36 W
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
1)
see table on next page and diagram 11
Rev. 1.6 page 1 2007-01-18
BSS169
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - ambient
Electrical characteristics, at T
R
thJA
=25 °C, unless otherwise specified
j
minimal footprint - - 350 K/W
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cutoff current
V
(BR)DSSVGS
V
GS(th)
I
D(off)
=-10 V, I
VDS=3 V, I
V
=100 V,
DS
V
=-10 V, T
GS
V
=100 V,
DS
V
=-10 V, T
GS
=250 µA
D
=50 µA
D
=25 °C
j
=125 °C
j
100 - - V
-2.9 -2.2 -1.8
- - 0.1 µA
--10
Gate-source leakage current
On-state drain current
Drain-source on-state resistance
Transconductance
Threshold voltage V
sorted in bands
GS(th)
J
I
GSS
I
DSS
R
DS(on)VGS
g
fs
V
GS(th)
VGS=20 V, V
VGS=0 V, V
V
|VDS|>2|ID|R
I
D
2)
VDS=3 V, I
=0 V, I
=10 V, I
GS
=0.14 A
=0 V
DS
=10 V
DS
=0.05 A
D
=0.17 A
D
DS(on)max
=50 µA
D
- - 10 nA
90 - - mA
- 5.3 12
- 2.9 6
,
0.10 0.19 - S
-2 - -1.8 V
K -2.15 - -1.95
L -2.3 - -2.1
M -2.45 - -2.25
N -2.6 - -2.4
2)
Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific
band cannot be ordered separately.
Ω
Rev. 1.6 page 2 2007-01-18
BSS169
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
C
C
t
t
t
t
iss
oss
rss
d(on)
r
d(off)
f
=-10 V, V
V
GS
f=1 MHz
V
=50 V,
DD
V
=-3…7 V,
GS
=0.12 A, R
I
D
DS
=6 Ω
G
=25 V,
-5168pF
-913
-47
- 2.9 4.2 ns
- 2.7 4.0
-1117
-2740
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
Q
gd
Q
g
V
DD
V
GS
=80 V, I
=-3 to 7 V
=0.12 A,
D
- 0.12 0.16 nC
- 0.9 1.4
- 2.1 2.8
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
V
plateau
I
S
I
S,pulse
V
SD
t
rr
Q
- -0.43 - V
- - 0.17 A
=25 °C
T
A
- - 0.68
VGS=-10 V, I
T
=25 °C
j
V
=50 V, I
R
di
/dt=100 A/µs
rr
F
=0.17 A,
F
=0.12 A,
F
- 0.79 1.2 V
- 20.5 25.6 ns
- 9.7 12.1 nC
Rev. 1.6 page 3 2007-01-18
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