INFINEON BSS138W G User Manual

BSS138W G

SIPMOS® Small-Signal-Transistor

Features

• N-channel

• Enhancement mode

• Logic level

• dv /dt rated

• Pb-free lead-plating; RoHS compliant

Type Package Tape and Reel Marking

BSS138W PG-SOT-323 L6327: 3000

SWs

Product Summary

V

DS

R

DS(on),max

I

D

PG-SOT-323

60 V

3.5

0.28 A

Ω

BSS138W PG-SOT-323 L6433: 10000 SWs

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

Reverse diode dv /dt dv /dt

Gate source voltage

ESD sensitivity (HBM) as per
MIL-STD 883

Power dissipation

Operating and storage temperature

=25 °C, unless otherwise specified

j

I

D

I

D,pulse

TA=25 °C

T

=70 °C

A

TA=25 °C

=0.28 A, VDS=48 V,

I

D

di /dt =200 A/µs,

T

=150 °C

j,max

V

GS

P

tot

, T

T

j

TA=25 °C

stg

Value

0.28 A

0.22

1.12

6 kV/µs

±20 V

Class 1

0.50 W

-55 ... 150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

Rev. 2.3 page 1 2007-01-18

BSS138W

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance,
junction - minimal footprint

Electrical characteristics, at T

R

thJA

=25 °C, unless otherwise specified

j

- - 250 K/W

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Drain-source leakage current

V

(BR)DSSVGS

V

GS(th)

I

D (off)

= 0 V, ID=250 µA

VGS=VDS, ID=26 µA

VDS=60 V,
V

=0 V, Tj=25 °C

GS

V

=60 V,

DS

V

=0 V, Tj=150 °C

GS

60 - - V

0.6 1.0 1.4

- - 0.1 µA

--5

Gate-source leakage current

Drain-source on-state resistance

Transconductance

I

GSS

R

DS(on)VGS

g

fs

VGS=20 V, VDS=0 V

=4.5 V, ID=0.03 A

V

=4.5 V, ID=0.16 A

GS

V

=10 V, ID=0.2 A

GS

|VDS|>2|ID|R

I

=0.22 A

D

DS(on)max

- 1 10 nA

- 3 4.0

- 3.2 6

- 2.1 3.5

,

0.12 0.23 - S

Ω

Rev. 2.3 page 2 2007-01-18

BSS138W

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

C

C

C

t

t

t

t

iss

oss

rss

d(on)

r

d(off)

f

=0 V, VDS=25 V,

V

GS

f =1 MHz

V

=30 V, VGS=10 V,

DD

=0.2 A, RG=6 Ω

I

D

-3243pF

- 7.2 10

- 2.8 4.2

- 2.2 3.3 ns

- 3.0 4.5

- 6.7 10

- 8.2 12

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Q

gs

Q

gd

Q

g

V

=48 V, ID=0.2 A,

DD

V

=0 to 10 V

GS

- 0.10 0.13 nC

- 0.3 0.4

- 1.0 1.5

Gate plateau voltage

Reverse Diode

Diode continous forward current

Diode pulse current

Diode forward voltage

Reverse recovery time

Reverse recovery charge

V

plateau

I

S

I

S,pulse

V

SD

t

rr

Q

- 3.2 - V

- - 0.28 A

=25 °C

T

A

- - 1.12

VGS=0 V, IF=0.28 A,
T

=25 °C

j

V

=30 V, IF=0.28 A,

R

di

/dt =100 A/µs

rr

F

- 0.85 1.2 V

- 8.3 12.4 ns

- 3.3 5 nC

Rev. 2.3 page 3 2007-01-18