BSS138W G
SIPMOS® Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level
• dv /dt rated
• Pb-free lead-plating; RoHS compliant
Type Package Tape and Reel Marking
BSS138W PG-SOT-323 L6327: 3000
SWs
Product Summary
V
DS
R
DS(on),max
I
D
PG-SOT-323
60 V
3.5
0.28 A
Ω
BSS138W PG-SOT-323 L6433: 10000 SWs
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
Reverse diode dv /dt dv /dt
Gate source voltage
ESD sensitivity (HBM) as per
MIL-STD 883
Power dissipation
Operating and storage temperature
=25 °C, unless otherwise specified
j
I
D
I
D,pulse
TA=25 °C
T
=70 °C
A
TA=25 °C
=0.28 A, VDS=48 V,
I
D
di /dt =200 A/µs,
T
=150 °C
j,max
V
GS
P
tot
, T
T
j
TA=25 °C
stg
Value
0.28 A
0.22
1.12
6 kV/µs
±20 V
Class 1
0.50 W
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Rev. 2.3 page 1 2007-01-18
BSS138W
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - minimal footprint
Electrical characteristics, at T
R
thJA
=25 °C, unless otherwise specified
j
- - 250 K/W
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
V
(BR)DSSVGS
V
GS(th)
I
D (off)
= 0 V, ID=250 µA
VGS=VDS, ID=26 µA
VDS=60 V,
V
=0 V, Tj=25 °C
GS
V
=60 V,
DS
V
=0 V, Tj=150 °C
GS
60 - - V
0.6 1.0 1.4
- - 0.1 µA
--5
Gate-source leakage current
Drain-source on-state resistance
Transconductance
I
GSS
R
DS(on)VGS
g
fs
VGS=20 V, VDS=0 V
=4.5 V, ID=0.03 A
V
=4.5 V, ID=0.16 A
GS
V
=10 V, ID=0.2 A
GS
|VDS|>2|ID|R
I
=0.22 A
D
DS(on)max
- 1 10 nA
- 3 4.0
- 3.2 6
- 2.1 3.5
,
0.12 0.23 - S
Ω
Rev. 2.3 page 2 2007-01-18
BSS138W
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
C
C
t
t
t
t
iss
oss
rss
d(on)
r
d(off)
f
=0 V, VDS=25 V,
V
GS
f =1 MHz
V
=30 V, VGS=10 V,
DD
=0.2 A, RG=6 Ω
I
D
-3243pF
- 7.2 10
- 2.8 4.2
- 2.2 3.3 ns
- 3.0 4.5
- 6.7 10
- 8.2 12
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
Q
gd
Q
g
V
=48 V, ID=0.2 A,
DD
V
=0 to 10 V
GS
- 0.10 0.13 nC
- 0.3 0.4
- 1.0 1.5
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
V
plateau
I
S
I
S,pulse
V
SD
t
rr
Q
- 3.2 - V
- - 0.28 A
=25 °C
T
A
- - 1.12
VGS=0 V, IF=0.28 A,
T
=25 °C
j
V
=30 V, IF=0.28 A,
R
di
/dt =100 A/µs
rr
F
- 0.85 1.2 V
- 8.3 12.4 ns
- 3.3 5 nC
Rev. 2.3 page 3 2007-01-18
1 Power dissipation 2 Drain current
P
=f(TA) ID=f(TA); VGS≥10 V
tot
0.3
0.5
0.25
0.4
0.2
0.3
[W]
tot
P
0.15
[A]
D
I
BSS138W
0.2
0.1
0
0 40 80 120 160
TA [°C]
0.1
0.05
0
0 40 80 120 160
TA [°C]
3 Safe operating area 4 Max. transient thermal impedance
I
=f(VDS); TA=25 °C; D =0 Z
D
parameter: t
10
[A]
D
I
10
10
10
1
0
-1
-2
p
limited by on-state
resistance
10 µs
100 µs
1 ms
10 ms
100 ms
DC
=f(tp)
thJA
parameter: D =tp/T
3
10
0.5
2
10
0.2
0.1
0.05
1
10
0.02
[K/W]
thJA
Z
10
10
0.01
0
single pulse
-1
-3
10
1 10 100
VDS [V]
10
-2
2
1
0
-1
-2
-3
-4
-5
10
-6
10
10
10
10
10
10
10
10
tp [s]
Rev. 2.3 page 4 2007-01-18
5 Typ. output characteristics 6 Typ. drain-source on resistance
I
=f(VDS); Tj=25 °C R
D
parameter: V
GS
=f(ID); Tj=25 °C
DS(on)
parameter: V
GS
BSS138W
0.6
0.5
V 10
V 7
V 5
V 4.5
V 4
10
2.9 V
3.2 V
3.5 V
8
0.4
6
]
[A]
D
I
0.3
V 3.5
V 3.2
[
R
Ω
DS(on)
4
0.2
V 2.9
0.1
0
012345
VDS [V]
2
0
0 0.1 0.2 0.3 0.4 0.5
ID [A]
7 Typ. transfer characteristics 8 Typ. forward transconductance
I
=f(VGS); |VDS|>2|ID|R
D
DS(on)max
gfs=f(ID); Tj=25 °C
4 V
4.5 V
5 V
7 V
10 V
0.6
0.5
0.4
0.35
0.3
0.4
0.25
[A]
D
I
0.3
0.2
[S]
fs
g
0.2
0.15
0.1
0.1
0.05
0
012345
VGS [V]
0
0.00 0.10 0.20 0.30 0.40
ID [A]
Rev. 2.3 page 5 2007-01-18
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R
=f(Tj); ID=0.2 A; VGS=10 V V
DS(on)
=f(Tj); VDS=VGS; ID=26 µA
GS(th)
parameter: I
D
BSS138W
8
2
1.6
6
%98
]
Ω
[
R
DS(on)
4
2
%98
typ
[V]
GS(th)
V
1.2
typ
0.8
%2
0.4
0
-60 -20 20 60 100 140
Tj [°C]
0
-60 -20 20 60 100 140
Tj [°C]
11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V
); VGS=0 V; f =1 MHz; Tj=25°C IF=f(VSD)
DS
parameter: T
2
10
Ciss
10
10
j
0
150 °C, 98%
25 °C
25 °C, 98%
150 °C
-1
1
10
C [pF]
10
0
Coss
Crss
0102030
VDS [V]
[A]
F
I
-2
10
-3
10
0 0.4 0.8 1.2 1.6 2
VSD [V]
Rev. 2.3 page 6 2007-01-18
13 Typ. gate charge 14 Drain-source breakdown voltage
V
=f(Q
GS
parameter: V
); ID=0.2 A pulsed V
gate
DD
=f(Tj); ID=250 µA
BR(DSS)
BSS138W
12
10
8
[V]
6
GS
V
4
2
0
0 0.2 0.4 0.6 0.8 1
12 V
Q
[nC]
gate
48 V
30 V
70
65
[V]
60
BR(DSS)
V
55
50
-60 -20 20 60 100 140 180
Tj [°C]
Rev. 2.3 page 7 2007-01-18
Package Outline:
BSS138W
Footprint: Packaging:
Rev. 2.3 page 8 2007-01-18
BSS138W
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
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(see address list).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.3 page 9 2007-01-18
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