Datasheet BSP 76 E6433 INF Datasheet

)

)

A

Smart Low Side Power Switch

HITFET BSP 76

Features

· Logic Level Input

· Input Protection (ESD)

· Thermal shutdown with auto restart

• Green product (RoHS compliant)

Product Summary

Drain source voltage

On-state resistance R

Nominal load current I

Clamping energy E

· Overload protection

· Short circuit protection

· Overvoltage protection

· Current limitation

· Analog driving possible

Application

· All kinds of resistive, inductive and capacitive loads in switching
or linear applications

· µC compatible power switch for 12 V DC applications

· Replaces electromechanical relays and discrete circuits

General Description

V

DS

DS(on

D(Nom

S

4

42 V

200 mW

1.4 A

150 mJ

3

2

1

VPS05163

N channel vertical power FET in Smart SIPMOSÒ technology. Fully protected by embedded
protection functions.

Vbb

M

Drain

Pin 2 and 4 (TAB)

Pin 3

Source

Pin 1

HITFET

In

ESD

â

Gate-Driving

Unit

Overload
Protection

Current
Limitation

Over­temperature
Protection

Overvoltage­Protection

Short circuit
Protection

Complete product spectrum and additional information http://www.infineon.com/hitfet

Datasheet 1 Rev. 1.3, 2008-04-14

)

j

g

A

Maximum Ratings at Tj = 25°C, unless otherwise specified

Smart Low Side Power Switch

HITFET BSP 76

Parameter

Drain source voltage V

Supply voltage for full short circuit protection V

Continuous input voltage

Continuous input current

1)

2)

-0.2V £ VIN£ 10V

V

< -0.2V or VIN > 10V

IN

Operating temperature T

Storage temperature T

Power dissipation

5)

TC = 85 °C

Unclamped single pulse inductive energy

Load dump protection V

LoadDump

2)3)

2)

= VA + V

S

VIN = 0 and 10 V, td = 400 ms, RI = 2 W,

= 9 W, VA = 13.5 V

R

L

Electrostatic discharge voltage

2)

(Human Body Model)

according to Jedec norm

EIA/JESD22-A114-B, Section 4

Symbol Value Unit

DS

bb(SC

V

IN

I

IN

42 V

42

-0.22) ... +10

mA

self limited

| I

| £ 2

IN

°C

mJ

P

E

V

V

st

tot

S

LD

ESD

-40 ...+150

-55 ... +150

3.8 W

150

50 V

2 kV

Thermal resistance

junction - ambient:

@ min. footprint

@ 6 cm

2

cooling area

4)

junction-soldering point: R

1

For input voltages beyond these limits I

2

not subject to production test, specified by design

3

V

Loaddump

4

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

connection. PCB mounted vertical without blown air.

5

not subject to production test, calculated by R

Datasheet 2 Rev. 1.3, 2008-04-14

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

has to be limited.

IN

and R

thJA

R

thJA

125

72

thJS

2 (one layer, 70µm thick) copper area for drain

ds(on)

17 K/W

K/W

)

a

Electrical Characteristics

Smart Low Side Power Switch

HITFET BSP 76

Parameter

Symbol Values Unit

at Tj = 25°C, unless otherwise specified min. typ. max.

Characteristics

Drain source clamp voltage

T

= - 40 ...+ 150, ID = 10 mA

j

Off-state drain current

= -40...+85 °C, Vbb = 32 V, VIN = 0 V

T

j

= 150 °C

T

j

Input threshold voltage

= 0.3 mA, Tj= 25 °C

I

D

= 0.3 mA, Tj= 150 °C

I

D

On state input current I

On-state resistance

= 5 V, ID = 1.4 A, Tj = 25 °C

V

IN

= 5 V, ID = 1.4 A, Tj = 150 °C

V

IN

On-state resistance

= 10 V, ID = 1.4 A, Tj = 25 °C

V

IN

= 10 V, ID = 1.4 A, Tj = 150 °C

V

IN

Nominal load current

5)

V

DS(AZ)

I

DSS

V

IN(th)

IN(on

R

DS(on)

R

DS(on)

I

D(Nom)

42 - 55 V

-

-

1.3

0.8

1.5

4

1.7

-

8

10

2.2

-

- 10 30 µA

-

-

-

-

190

350

150

280

240

480

200

400

1.4 1.8 - A

VDS = 0.5 V, Tj < 150°C, VIN = 10 V, TA = 85 °C

Current limit (active if VDS>2.5 V)

1)

I

D(lim)

5 7.5 10

VIN = 10 V, VDS = 12 V, tm = 200 µs

µA

V

mW

1

Device switched on into existing short circuit (see diagram Determination of I

nd a short circuit occurs, these values might be exceeded for max. 50 µs.

5

not subject to production test, calculated by R

Datasheet 3 Rev. 1.3, 2008-04-14

thJA

and R

ds(on)

). If the device is in on condit

D(lim)

j

j

Electrical Characteristics

Smart Low Side Power Switch

HITFET BSP 76

Parameter

Symbol Values Unit

at Tj = 25°C, unless otherwise specified min. typ. max.

Dynamic Characteristics

Turn-on time V

= 4.7 W, VIN = 0 to 10 V, Vbb = 12 V

R

L

to 90% ID:

IN

Turn-off time VIN to 10% ID:

R

= 4.7 W, VIN = 10 to 0 V, Vbb = 12 V

L

Slew rate on 70 to 50% Vbb:

R

= 4.7 W, VIN = 0 to 10 V, Vbb = 12 V

L

Slew rate off 50 to 70% Vbb:

R

= 4.7 W, VIN = 10 to 0 V, Vbb = 12 V

L

Protection Functions

1)

Thermal overload trip temperature T

Thermal hysteresis

Input current protection mode

T

= 150 °C

j

Unclamped single pulse inductive energy

= 1.4 A, Tj = 25 °C, Vbb = 12 V

I

D

2)

2)

t

on

t

off

-dVDS/dt

dVDS/dt

t

DT

t

I

IN(Prot)

E

AS

on

off

- 45 100

- 60 100

- 0.4 1.5

- 0.6 1.5

150 175 - °C

- 10 - K

- 40 300 µA

150 - - mJ

µs

V/µs

Inverse Diode

Inverse diode forward voltage

I

= 7 A, tm = 250 µs, VIN = 0 V,

F

t

= 300 µs

P

1

Integrated protection functions are designed to prevent IC destruction under fault conditions

described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2

not subject to production test, specified by design

Datasheet 4 Rev. 1.3, 2008-04-14

V

SD

- 1 1.5

V