Datasheet BSP324 Datasheet (INFINEON)

Rev. 1.1

DS

DS(on)

D

GS

BSP324

SIPMOS Power-Transistor

Feature

• N-Channel

• Enhancement mode

• Logic Level

• dv/dt rated

Pb-free lead plating; RoHS compliant

•

Type Package Tape and Reel Information

BSP324

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

SOT-223
PG-SOT-223

E6327: 1000 pcs/reel
L6327: 1000 pcs/reel

Product Summary

V
R
I

Marking

BSP324
BSP324BSP324

400 V

25 Ω

0.17 A

SOT-223

Parameter Symbol Value Unit

Continuous drain current

TA=25°C
TA=70°C

Pulsed drain current

TA=25°C

Reverse diode dv/dt

IS=0.17A, VDS=320V, di/dt=200A/µs, T

jmax

=175°C

I

I

dv/dt

Gate source voltage V

D

D puls

0.17

0.14

0.68

6 kV/µs

±20

A

V
ESD Sensitivity (HBM) as per MIL-STD 883 Class 1
Power dissipation

TA=25°C

Operating and storage temperature T

P

tot

j

, T

stg

1.8 W

-55... +150

°C
IEC climatic category; DIN IEC 68-1 55/150/56

2005-11-23Page 1

Rev. 1.1

BSP324

Thermal Characteristics
Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - soldering point

R

thJS

- 16 25 K/W

(Pin 4)
SMD version, device on PCB:

@ min. footprint
@ 6 cm2 cooling area

1)

R

thJA

-

-

85
45

115

70

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=250µA

Gate threshold voltage, VGS = V

ID=94µA

Zero gate voltage drain current

VDS=400V, VGS=0, Tj=25°C

DS

V

(BR)DSS

V

GS(th)

I

DSS

400 - - V

1.3 1.9 2.3

-

0.01

0.1

µA

VDS=400V, VGS=0, Tj=125°C

Gate-source leakage current

VGS=20V, VDS=0

Drain-source on-state resistance

VGS=4.5V, ID=0.05A

Drain-source on-state resistance

VGS=10V, ID=0.17A

1

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (single layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

I

GSS

R

DS(on)

R

DS(on)

-

-

10

- 10 100 nA

- 14.3 22

- 13.6 25

2005-11-23Page 2

Ω

Rev. 1.1

iss

oss

rss

r

f

gd

(plateau)

SM

SD

rr

BSP324

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance g

Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

Gate Charge Characteristics

Gate to source charge Q
Gate to drain charge Q
Gate charge total Q

Gate plateau voltage V

fs

d(on)

d(off)

gs

g

VDS≥2*ID*R
ID=0.14A

VGS=0, VDS=25V,
f=1MHz

DS(on)max

,

0.09 0.19 - S

- 103 154 pF

- 9.2 13.6

- 3.8 5.7

VDD=225V, VGS=10V,
ID=0.17A, RG=6Ω

- 4.6 6.9 ns

- 4.4 6.6

- 17 25

- 68 102

VDD=320V, ID=0.17A - 0.35 0.45 nC

- 2.17 2.82

VDD=320V, ID=0.17A,
VGS=0 to 10V

VDD=320V, ID=0.17A - 3.6 - V

- 4.54 5.9

Reverse Diode

Inverse diode continuous

I

forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage V

Reverse recovery time t
Reverse recovery charge Q

S

TA=25°C - - 0.17 A

- - 0.68

VGS=0, IF=0.17A - 0.8 1.2 V

rr

VR=200V, I

diF/dt=100A/µs

F=lS

,

- 85 127 ns

- 104 156 nC

2005-11-23Page 3

Rev. 1.1

BSP324

1 Power dissipation

P

= f (TA)

tot

BSP324

1.9

W

1.6

1.4

tot

1.2

P

1

0.8

0.6

0.4

0.2

0

0 20 40 60 80 100 120

°C

2 Drain current

ID = f (TA)
parameter: VGS≥ 10 V

BSP324

0.18

A

0.14

0.12

D

I

0.1

0.08

0.06

0.04

0.02

160

T

A

0

0 20 40 60 80 100 120 °C 160

T

A

3 Safe operating area

ID = f ( VDS )

parameter : D = 0 , TA = 25 °C

1

BSP324

10

A

0

10

I

D

I

-1

10

10

10

-2

-3

10

DS(on)

R

0

D

/

DS

V

=

1

10

10

2

t

= 170.0µs

p

DC

V

V

1 ms

10 ms

DS

10

4 Transient thermal impedance

Z

= f (tp)

thJA

parameter : D = tp/T

2

BSP324

10

K/W

1

10

thJA

Z

0

10

single pulse

-1

10

-2

3

10

10

-5

-4

-3

10

10

10

-2

-1

10

10 0 10 1 10

D = 0.50

0.20

0.10

0.05

0.02

0.01

2

t

p

4

s

10

2005-11-23Page 4

Rev. 1.1

BSP324

5 Typ. output characteristic

ID = f (VDS)

parameter: Tj = 25 °C, V

0.6

0.4

0.3

0.2

0.1

0

0 1 2 3 4 5 6 7 8 10

GS

10V
7V
6V
5V

4.5V

4.3V

4.1V

3.9V

3.7V

6 Typ. drain-source on resistance

R

parameter: Tj = 25 °C, V

= f (ID)

DS(on)

22

Ω

18

16

DS(on)

14

R

12

3.7V

10

3.9V

4.1V

8

4.3V

4.5V

6

5V
6V

4

7V
10V

2

0

0 0.05 0.1 0.15 0.2 0.25

GS

0.35

A

I

D

7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x R

DS(on)max

parameter: Tj = 25 °C

0.35

A

0.25

D

I

0.2

0.15

0.1

0.05

0

0 1 2 3

8 Typ. forward transconductance

gfs = f(ID)

parameter: Tj = 25 °C

0.36

S

0.28

0.24

fs

g

0.2

0.16

0.12

0.08

0.04

V

5

V

GS

0

0 0.05 0.1 0.15 0.2 0.25

0.35

A

I

D

2005-11-23Page 5

Rev. 1.1

BSP324

9 Drain-source on-state resistance

R

DS(on)

= f (Tj)

parameter : ID = 0.17 A, VGS = 10 V

BSP324

130

Ω

110
100

90

DS(on)

80

R

70
60
50
40
30
20
10

0

-60 -20 20 60 100

98%

typ

°C

10 Typ. gate threshold voltage

V

parameter: VGS = V

180

T

j

= f (Tj)

GS(th)

; I

DS

2.6

V

2.2

2

GS(th)

1.8

- V

1.6

1.4

1.2

1

0.8

0.6

-60 -20 20 60 100

=94µA

D

typ.

2%

98%

°C

160

T

j

11 Typ. capacitances

C = f (VDS)
parameter: VGS=0, f=1 MHz, Tj = 25 °C

3

10

pF

2

10

C

1

10

0

10

0 5 10 15 20

Ciss

Coss

Crss

V

V

DS

30

12 Forward character. of reverse diode

IF = f (VSD)

parameter: T

0

10

A

-1

10

F

I

-2

10

-3

10

0 0.4 0.8 1.2 1.6 2 2.4

BSP324

j

Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)

V

V

SD

3

2005-11-23Page 6

Rev. 1.1

BSP324

13 Typ. gate charge

V

= f (QG); parameter: VDS ,

GS

ID = 0.17 A pulsed, Tj = 25 °C

BSP324

16

V

12

GS

10

V

0.2 V

DS max

8

0.5 V

DS max

0.8 V

DS max

6

4

2

0

0 1 2 3 4 5

nC

Q

14 Drain-source breakdown voltage

V

(BR)DSS

(BR)DSS

V

7

G

= f (Tj)

BSP324

490

V

470
460
450
440
430
420
410
400
390
380
370
360

-60 -20 20 60 100

°C

180

T

j

2005-11-23Page 7

Rev. 1.1

Published by
Infineon Technologies AG ,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted
characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.

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For further information on technology, delivery terms and conditions and prices please contact your nearest
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For information on the types in question please contact your nearest Infineon Technologies Office.

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BSP324

2005-11-23Page 8