INFINEON BSP324 User Manual

Rev. 1.1

DS

DS(on)

D

GS

BSP324

SIPMOS Power-Transistor

Feature

• N-Channel

• Enhancement mode

• Logic Level

• dv/dt rated

Pb-free lead plating; RoHS compliant

•

Type Package Tape and Reel Information

BSP324

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

SOT-223
PG-SOT-223

E6327: 1000 pcs/reel
L6327: 1000 pcs/reel

Product Summary

V
R
I

Marking

BSP324
BSP324BSP324

400 V

25 Ω

0.17 A

SOT-223

Parameter Symbol Value Unit

Continuous drain current

TA=25°C
TA=70°C

Pulsed drain current

TA=25°C

Reverse diode dv/dt

IS=0.17A, VDS=320V, di/dt=200A/µs, T

jmax

=175°C

I

I

dv/dt

Gate source voltage V

D

D puls

0.17

0.14

0.68

6 kV/µs

±20

A

V
ESD Sensitivity (HBM) as per MIL-STD 883 Class 1
Power dissipation

TA=25°C

Operating and storage temperature T

P

tot

j

, T

stg

1.8 W

-55... +150

°C
IEC climatic category; DIN IEC 68-1 55/150/56

2005-11-23Page 1

Rev. 1.1

BSP324

Thermal Characteristics
Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - soldering point

R

thJS

- 16 25 K/W

(Pin 4)
SMD version, device on PCB:

@ min. footprint
@ 6 cm2 cooling area

1)

R

thJA

-

-

85
45

115

70

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=250µA

Gate threshold voltage, VGS = V

ID=94µA

Zero gate voltage drain current

VDS=400V, VGS=0, Tj=25°C

DS

V

(BR)DSS

V

GS(th)

I

DSS

400 - - V

1.3 1.9 2.3

-

0.01

0.1

µA

VDS=400V, VGS=0, Tj=125°C

Gate-source leakage current

VGS=20V, VDS=0

Drain-source on-state resistance

VGS=4.5V, ID=0.05A

Drain-source on-state resistance

VGS=10V, ID=0.17A

1

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (single layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

I

GSS

R

DS(on)

R

DS(on)

-

-

10

- 10 100 nA

- 14.3 22

- 13.6 25

2005-11-23Page 2

Ω

Rev. 1.1

iss

oss

rss

r

f

gd

(plateau)

SM

SD

rr

BSP324

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance g

Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

Gate Charge Characteristics

Gate to source charge Q
Gate to drain charge Q
Gate charge total Q

Gate plateau voltage V

fs

d(on)

d(off)

gs

g

VDS≥2*ID*R
ID=0.14A

VGS=0, VDS=25V,
f=1MHz

DS(on)max

,

0.09 0.19 - S

- 103 154 pF

- 9.2 13.6

- 3.8 5.7

VDD=225V, VGS=10V,
ID=0.17A, RG=6Ω

- 4.6 6.9 ns

- 4.4 6.6

- 17 25

- 68 102

VDD=320V, ID=0.17A - 0.35 0.45 nC

- 2.17 2.82

VDD=320V, ID=0.17A,
VGS=0 to 10V

VDD=320V, ID=0.17A - 3.6 - V

- 4.54 5.9

Reverse Diode

Inverse diode continuous

I

forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage V

Reverse recovery time t
Reverse recovery charge Q

S

TA=25°C - - 0.17 A

- - 0.68

VGS=0, IF=0.17A - 0.8 1.2 V

rr

VR=200V, I

diF/dt=100A/µs

F=lS

,

- 85 127 ns

- 104 156 nC

2005-11-23Page 3