BSO094N03S
OptiMOS®2 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC
• N-channel
• Logic level
• Excellent gate charge x R
• Very low on-resistance R
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
Type Package Marking
1)
for target applications
product (FOM)
DS(on)
DS(on)
Product Summary
V
DS
R
DS(on),max
I
D
PG-DSO-8
30 V
9.1
13 A
mΩ
BSO094N03S PG-DSO-8 94N3S
Maximum ratings, at T
Parameter Symbol Conditions Unit
=25 °C, unless otherwise specified
j
Value
10 secs steady state
=70 °C
=150 °C
2)
2)
3)
2)
GS
=25 Ω
13 10 A
10 8.3
52
86
6
±20
mJ
kV/µs
V
2.5 1.56 W
-55 ... 150
°C
55/150/56
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
I
D
I
D,pulse
E
AS
Reverse diode dv /dt dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
V
GS
P
tot
, T
T
j
IEC climatic category; DIN IEC 68-1
TA=25 °C
T
A
TA=25 °C
ID=13 A, R
=13 A, VDS=20 V,
I
D
di /dt =200 A/µs,
T
j,max
TA=25 °C
stg
Rev. 1.5 page 1 2006-05-09
BSO094N03S
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - soldering point
Thermal resistance,
junction - ambient
Electrical characteristics, at T
R
thJS
R
thJA
minimal footprint,
t
≤10 s
p
minimal footprint,
steady state
2
cooling area2),
6 cm
t
≤10 s
p
2
cooling area2),
6 cm
steady state
=25 °C, unless otherwise specified
j
- - 35 K/W
- - 110
- - 150
--50
--80
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
1)
J-STD20 and JESD22
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3
V
(BR)DSSVGS
V
GS(th)
I
DSS
I
GSS
R
DS(on)VGS
R
G
g
fs
=0 V, ID=1 mA
VDS=VGS, ID=30 µA
VDS=30 V, VGS=0 V,
T
=25 °C
j
V
=30 V, VGS=0 V,
DS
T
=125 °C
j
VGS=20 V, VDS=0 V
=4.5 V, ID=11 A
=10 V, ID=13 A
V
GS
|VDS|>2|ID|R
I
=13 A
D
DS(on)max
30 - - V
1.2 1.6 2
- 0.1 1 µA
- 10 100
- 10 100 nA
- 10.3 12.9
- 7.6 9.1
- 1.1 -
,
19 37 - S
mΩ
Ω
Rev. 1.5 page 2 2006-05-09
BSO094N03S
g
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Char
e Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
4)
C
C
C
t
t
t
t
Q
Q
Q
Q
iss
oss
rss
d(on)
r
d(off)
f
gs
g(th)
gd
sw
V
=0 V, VDS=15 V,
GS
f =1 MHz
V
=15 V, VGS=10 V,
DD
=6.5 A, R
I
D
=15 V, ID=6.5 A,
V
DD
V
=0 to 5 V
GS
G
=2.7 Ω
- 1730 2300 pF
- 620 820
- 81 120
- 5.4 8 ns
- 4.4 6.6
-2233
- 3.2 4.8
- 4.8 6.4 nC
- 2.8 3.7
- 3.3 4.9
- 5.3 7.6
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Q
V
Q
Q
g
plateau
g(sync)
oss
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
4)
See figure 16 for gate charge parameter definition
I
S
I
S,pulse
V
SD
Q
rr
VDS=0.1 V,
V
=0 to 5 V
GS
VDD=15 V, VGS=0 V
TA=25 °C
VGS=0 V, IF=2.5 A,
T
=25 °C
j
VR=13 V, IF=IS,
di
/dt =400 A/µs
F
-1318
- 2.8 - V
-1216nC
-1520
- - 2.5 A
--52
- 0.74 1 V
- - 10 nC
Rev. 1.5 page 3 2006-05-09
1 Power dissipation 2 Drain current
P
=f(TA); tp≤10 s ID=f(TA); VGS≥10 V; tp≤10 s
tot
BSO094N03S
3
16
2.5
12
2
[W]
1.5
tot
P
[A]
D
I
8
1
4
0.5
0
0 40 80 120 160
TA [°C]
0
0 40 80 120 160
TA [°C]
3 Safe operating area 4 Max. transient thermal impedance
Z
I
=f(VDS); TA=25 °C1); D =0
D
parameter: t
10
p
2
100
10 µs
=f(tp)
thJS
parameter: D =tp/T
2
100
10
100 µs
1
10
10
limited by on-state
resistance
0
1
10
[A]
D
I
-1
0.1
10
-2
0.01
0.1 1 10 100
10
10
-1
10
0
VDS [V]
10
1 ms
10 ms
10 s
DC
1
10
2
0.5
1
10
0.2
10
0.1
0.05
0.02
0
1
[K/W]
10
thJS
Z
0.01
-1
0.1
10
10
single pulse
-2
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
10
-4
-5
10
10
-3
-2
10
tp [s]
10
-1
10
1
0
10
Rev. 1.5 page 4 2006-05-09
5 Typ. output characteristics 6 Typ. drain-source on resistance
I
=f(VDS); Tj=25 °C R
D
parameter: V
GS
=f(ID); Tj=25 °C
DS(on)
parameter: V
GS
BSO094N03S
]
Ω
[m
DS(on)
R
25
20
15
10
[A]
D
I
30
25
20
15
10 V
4.5 V
3.3 V
3.2 V
3.1 V
3 V
10
5
2.8 V
2.6 V
0
0123
VDS [V]
5
0
0102030
ID [A]
7 Typ. transfer characteristics 8 Typ. forward transconductance
I
=f(VGS); |VDS|>2|ID|R
D
parameter: T
j
DS(on)max
gfs=f(ID); Tj=25 °C
3.4 V
3.6 V
3.8 V
4.2 V
4 V
4.5 V
5 V
10 V
50
40
60
50
40
30
[A]
D
I
[S]
fs
g
30
20
20
10
125 °C
25 °C
0
01234
VGS [V]
10
0
0102030
ID [A]
Rev. 1.5 page 5 2006-05-09
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R
=f(Tj); ID=13 A; VGS=10 V V
DS(on)
=f(Tj); VGS=V
GS(th)
parameter: I
DS
D
BSO094N03S
16
2.5
2
12
300 µA
]
Ω
[m
DS(on)
R
8
98 %
1.5
typ
[V]
GS(th)
V
1
30 µA
4
0.5
0
-60 -20 20 60 100 140 180
Tj [°C]
0
-60 -20 20 60 100 140 180
Tj [°C]
11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V
); VGS=0 V; f =1 MHz IF=f(VSD)
DS
4
10000
10
parameter: T
2
100
10
j
150 °C
25 °C
Ciss
Coss
10
3
1000
C [pF]
2
10
10
100
1
10
Crss
0 5 10 15 20 25 30
VDS [V]
1
10
10
[A]
F
I
0
1
10
-1
0.1
10
0 0.2 0.4 0.6 0.8 1 1.2
VSD [V]
150 °C, 98 %
25 °C, 98%
Rev. 1.5 page 6 2006-05-09
13 Avalanche characteristics 14 Typ. gate charge
V
IAS=f(tAV); R
parameter: T
=25 Ω
GS
j(start)
=f(Q
GS
parameter: V
); ID=6.5 A pulsed
gate
DD
BSO094N03S
100
[A]
10
AV
I
125 °C
1
1 10 100 1000
tAV [µs]
25 °C
100 °C
12
10
8
[V]
6
GS
V
4
2
0
0 5 10 15 20 25 30
Q
15 Drain-source breakdown voltage 16 Gate charge waveforms
V
=f(Tj); ID=1 mA
BR(DSS)
gate
15 V
6 V
24 V
[nC]
36
V
GS
34
32
30
Q
g
[V]
28
BR(DSS)
V
26
24
22
20
-60 -20 20 60 100 140 180
V
gs(th)
Q
g(th)
Q
gs
Q
sw
Q
gd
Q
gate
Tj [°C]
Rev. 1.5 page 7 2006-05-09
Package Outline PG-DSO-8
PG-DSO-8: Outline
BSO094N03S
Footprint Packaging
Tape
Tube
Rev. 1.5 page 8 2006-05-09
BSO094N03S
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Rev. 1.5 page 9 2006-05-09
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