INFINEON BSO094N03S User Manual
BSO094N03S
OptiMOS®2 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC
• N-channel
• Logic level
• Excellent gate charge x R
• Very low on-resistance R
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
Type Package Marking
1)
for target applications
product (FOM)
DS(on)
DS(on)
Product Summary
V
DS
R
DS(on),max
I
D
PG-DSO-8
30 V
9.1
13 A
mΩ
BSO094N03S PG-DSO-8 94N3S
Maximum ratings, at T
Parameter Symbol Conditions Unit
=25 °C, unless otherwise specified
j
Value
10 secs steady state
=70 °C
=150 °C
2)
2)
3)
2)
GS
=25 Ω
13 10 A
10 8.3
52
86
6
±20
mJ
kV/µs
V
2.5 1.56 W
-55 ... 150
°C
55/150/56
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
I
D
I
D,pulse
E
AS
Reverse diode dv /dt dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
V
GS
P
tot
, T
T
j
IEC climatic category; DIN IEC 68-1
TA=25 °C
T
A
TA=25 °C
ID=13 A, R
=13 A, VDS=20 V,
I
D
di /dt =200 A/µs,
T
j,max
TA=25 °C
stg
Rev. 1.5 page 1 2006-05-09
BSO094N03S
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - soldering point
Thermal resistance,
junction - ambient
Electrical characteristics, at T
R
thJS
R
thJA
minimal footprint,
t
≤10 s
p
minimal footprint,
steady state
2
cooling area2),
6 cm
t
≤10 s
p
2
cooling area2),
6 cm
steady state
=25 °C, unless otherwise specified
j
- - 35 K/W
- - 110
- - 150
--50
--80
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
1)
J-STD20 and JESD22
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3
V
(BR)DSSVGS
V
GS(th)
I
DSS
I
GSS
R
DS(on)VGS
R
G
g
fs
=0 V, ID=1 mA
VDS=VGS, ID=30 µA
VDS=30 V, VGS=0 V,
T
=25 °C
j
V
=30 V, VGS=0 V,
DS
T
=125 °C
j
VGS=20 V, VDS=0 V
=4.5 V, ID=11 A
=10 V, ID=13 A
V
GS
|VDS|>2|ID|R
I
=13 A
D
DS(on)max
30 - - V
1.2 1.6 2
- 0.1 1 µA
- 10 100
- 10 100 nA
- 10.3 12.9
- 7.6 9.1
- 1.1 -
,
19 37 - S
mΩ
Ω
Rev. 1.5 page 2 2006-05-09
BSO094N03S
g
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Char
e Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
4)
C
C
C
t
t
t
t
Q
Q
Q
Q
iss
oss
rss
d(on)
r
d(off)
f
gs
g(th)
gd
sw
V
=0 V, VDS=15 V,
GS
f =1 MHz
V
=15 V, VGS=10 V,
DD
=6.5 A, R
I
D
=15 V, ID=6.5 A,
V
DD
V
=0 to 5 V
GS
G
=2.7 Ω
- 1730 2300 pF
- 620 820
- 81 120
- 5.4 8 ns
- 4.4 6.6
-2233
- 3.2 4.8
- 4.8 6.4 nC
- 2.8 3.7
- 3.3 4.9
- 5.3 7.6
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Q
V
Q
Q
g
plateau
g(sync)
oss
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
4)
See figure 16 for gate charge parameter definition
I
S
I
S,pulse
V
SD
Q
rr
VDS=0.1 V,
V
=0 to 5 V
GS
VDD=15 V, VGS=0 V
TA=25 °C
VGS=0 V, IF=2.5 A,
T
=25 °C
j
VR=13 V, IF=IS,
di
/dt =400 A/µs
F
-1318
- 2.8 - V
-1216nC
-1520
- - 2.5 A
--52
- 0.74 1 V
- - 10 nC
Rev. 1.5 page 3 2006-05-09