Infineon BSM75GD60DLC Data Sheet

Technische Information / Technical Information

IGBT-Module
IGBT-Modules

BSM 75 GD 60 DLC

Höchstzulässige Werte / Maximum rated values

Elektrische Eigenschaften / Electrical properties

Kollektor-Emitter-Sperrspannung
collector-emitter voltage

Kollektor-Dauergleichstrom
DC-collector current

Periodischer Kollektor Spitzenstrom
repetitive peak collector current

Gesamt-Verlustleistung
total power dissipation

Gate-Emitter-Spitzenspannung
gate-emitter peak voltage

Dauergleichstrom
DC forward current

Periodischer Spitzenstrom
repetitive peak forw. current

Grenzlastintegral der Diode

2

t - value, Diode

I

TC = 70° C I
T

= 25 °C I

C

t

= 1 ms, TC = 70°C I

P

=25°C, Transistor P

T

C

= 1 ms I

t

P

VR = 0V, tp = 10ms, TVj = 125°C

V

CES

C,nom.

C

CRM

tot

V

GES

I

F

FRM

2

I

600 V

75 A
95 A

150 A

330 W

+/- 20V V

75 A

150 A

t

1.200

A2s

Isolations-Prüfspannung
insulation test voltage

RMS, f = 50 Hz, t = 1 min.

Charakteristische Werte / Characteristic values

Transistor / Transistor

I

= 75A, VGE = 15V, Tvj = 25°C

Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage

Gate-Schwellenspannung
gate threshold voltage

Eingangskapazität
input capacitance

Rückwirkungskapazität
reverse transfer capacitance

Kollektor-Emitter Reststrom
collector-emitter cut-off current

Gate-Emitter Reststrom
gate-emitter leakage current

C

IC = 75A, VGE = 15V, Tvj = 125°C

= 1,5 mA, VCE = VGE, Tvj = 25°C V

I

C

f = 1MHz,T

f = 1MHz,T

= 25°C,VCE = 25V, VGE = 0V C

vj

= 25°C,VCE = 25V, VGE = 0V C

vj

VCE = 600V, VGE = 0V, Tvj = 25°C
VCE = 600V, VGE = 0V, Tvj = 125°C

= 0V, VGE = 20V, Tvj = 25°C I

V

CE

V

V

CE sat

GE(th)

I

GES

ISOL

min. typ. max.

- 1,95 2,45 V

- 2,20 - V

4,5 5,5 6,5 V

ies

res

CES

- 3,3 - nF

- 0,3 - nF

- 1 500 µA

-1-mA

- - 400 nA

2,5 kV

prepared by: Andreas Vetter date of publication: 2006-01-31

approved by: Michael Hornkamp revision: 3

1 (8)

BSM 75 GD 60 DLC

Technische Information / Technical Information

IGBT-Module
IGBT-Modules

BSM 75 GD 60 DLC

Charakteristische Werte / Characteristic values

Transistor / Transistor

I

= 75 A, VCC = 300V

Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)

Anstiegszeit (induktive Last)
rise time (inductive load)

Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)

Fallzeit (induktive Last)
fall time (inductive load)

Einschaltverlustenergie pro Puls
turn-on energy loss per pulse

Abschaltverlustenergie pro Puls
turn-off energy loss per pulse

Kurzschlußverhalten
SC Data

Modulinduktivität
stray inductance module

C

V

= ±15V, RG = 3,0 Ω, Tvj = 25°C t

GE

VGE = ±15V, RG = 3,0 Ω, Tvj = 125°C
I

= 75 A, VCC = 300V

C

V

= ±15V, RG = 3,0 Ω, Tvj = 25°C t

GE

VGE = ±15V, RG = 3,0 Ω, Tvj = 125°C
I

= 75 A, VCC = 300V

C

V

= ±15V, RG = 3,0 Ω, Tvj = 25°C t

GE

VGE = ±15V, RG = 3,0 Ω, Tvj = 125°C
I

= 75 A, VCC = 300V

C

V

= ±15V, RG = 3,0 Ω, Tvj = 25°C t

GE

VGE = ±15V, RG = 3,0 Ω, Tvj = 125°C
I

= 75 A, VCC = 300V, VGE = 15V

C

= 3,0 Ω, Tvj = 125°C, Lσ = 15 nH

R

G

I

= 75 A, VCC = 300V, VGE = 15V

C

= 3,0 Ω, Tvj = 125°C, Lσ = 15 nH

R

G

t

≤ 10µsec, VGE ≤ 15V

P

≤125°C, VCC=360V, V

T

Vj

CEmax

= V

CES -LσCE

·di/dt

min. typ. max.

d,on

r

d,off

f

E

on

E

off

I

SC

L

σCE

-63-ns

-65-ns

-22-ns

-25-ns

- 155 - ns

- 170 - ns

-20-ns

-35-ns

mJ

0,7-

-

- 2,4 - mJ

- 340 - A

- 55 - nH

Modul-Leitungswiderstand, Anschlüsse - Chip
lead resistance, terminals - chip

= 25°C R

T

c

Charakteristische Werte / Characteristic values

Diode / Diode

I

= 75 A, VGE = 0V, Tvj = 25°C

Durchlaßspannung
forward voltage

Rückstromspitze
peak reverse recovery current

Sperrverzögerungsladung
recovered charge

Abschaltenergie pro Puls
reverse recovery energy

F

I

= 75 A, VGE = 0V, Tvj = 125°C

F

I

= 75 A, - diF/dt = 3000 A/µsec

F

= 300V, VGE = -10V, Tvj = 25°C I

V

R

V

= 300V, VGE = -10V, Tvj = 125°C

R

I

= 75 A, - diF/dt = 3000 A/µsec

F

= 300V, VGE = -10V, Tvj = 25°C Q

V

R

VR = 300V, VGE = -10V, Tvj = 125°C
I

= 75 A, - diF/dt = 3000 A/µsec

F

= 300V, VGE = -10V, Tvj = 25°C E

V

R

VR = 300V, VGE = -10V, Tvj = 125°C

CC'+EE'

- 4,4 -

min. typ. max.

V

F

RM

r

rec

- 1,25 1,6 V

- 1,20 - V

-95-A

- 115 - A

- 5,1 - µC

- 7,9 - µC

---mJ

- 2,3 - mJ

mΩ

2 (8)

BSM 75 GD 60 DLC

Technische Information / Technical Information

IGBT-Module
IGBT-Modules

BSM 75 GD 60 DLC

Thermische Eigenschaften / Thermal properties

Innerer Wärmewiderstand
thermal resistance, junction to case

Übergangs-Wärmewiderstand
thermal resistance, case to heatsink

Höchstzulässige Sperrschichttemperatur
maximum junction temperature

Betriebstemperatur
operation temperature

Lagertemperatur
storage temperature

Transistor / transistor, DC - - 0,37 K/W
Diode/Diode, DC - - 0,73 K/W

pro Modul / per module

λ

= 1 W/m*K / λ

Paste

grease

= 1 W/m*K

min. typ. max.

R

thJC

R

thCK

T

vj

T

op

T

stg

- 0,02 - K/W

- - 150 °C

-40 - 125 °C

-40 - 125 °C

Mechanische Eigenschaften / Mechanical properties

Gehäuse, siehe Anlage
case, see appendix

Innere Isolation
internal insulation

CTI
comperative tracking index

Anzugsdrehmoment f. mech. Befestigung
mounting torque

Anzugsdrehmoment f. elektr. Anschlüsse
terminal connection torque

Gewicht
weight

Schraube M5
screw M5

Al2O

3

225

M1

G 180 g

-15 15 %

4Nm

-Nm

-Nm

Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.

This technical information specifies semiconductor devices but promises no characteristics.
It is valid in combination with the belonging technical notes.

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BSM 75 GD 60 DLC