Infineon BSM50GD170DL Data Sheet
Marketing Information
BSM 50 GD 170 DL
118.11
94.5
European PowerSemiconductor and
Electronics Company
21
119
121.5
99.9
4 x 19.05 = 76.2
19.05
1 2 3 5196 12
3.81
15.24
connections to be made externally
3.81
18
17 16 15
4
5 x 15.24 =76.2
7 8 9 1110
110
1.15x1.0
13
20
1
2
3
4
5
6
7
8
10
11
12
9
19
17
15
14
01.07.1998
BSM 50 GD 170 DL vorläufige Daten
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
1700
V
Kollektor-Dauergleichstrom
DC-collector current
TC = 80°C
I
50ATC = 25°C
IC100APeriodischer Kollektor Spitzenstrom
repetitive peak collector current
tp = 1 ms, T
= 80°C
I
100AGesamt-Verlustleistung
total power dissipation
P
480WGate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
± 20VDauergleichstrom
DC forward current
IF50APeriodischer Spitzenstrom
repetitive peak forw. current
I
100
A
Isolations-Prüfspannung
insulation test voltage
V
3,4
kV
Charakteristische Werte / Characteristic values: Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
v
-
2,7
3,3
V
Gate-Schwellenspannung
gate threshold voltage
v
4,5
5,5
6,5VEingangskapazität
input capacitance
C
-
3,5-nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
I
-
0,02
0,1
mA
Gate-Emitter Reststrom
gate-emitter leakage current
I
--100nAEinschaltverzögerungszeit (induktive Last)
turn-on delay time (inductive load)
t
Anstiegszeit (induktive Last)
t
Abschaltverzögerungszeit (ind. Last)
t
Fallzeit (induktive Last)
fall time (inductive load)
t
Einschaltverlustenergie pro Puls
E
Abschaltverlustenergie pro Puls
E
Ω
SC
Vj
≤
CEmax=VCES
sCE
sCE
Charakteristische Werte / Characteristic values: Diode
Durchlaßspannung
forward voltage
VF-
2,2
2,6
V
Rückstromspitze
peak reverse recovery current
I
Sperrverzögerungsladung
recovered charge
Q
recVR
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Transistor / transistor, DC
R
--0,26
K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Module / per Module
R
Paste
grease
Höchstzul. Sperrschichttemperatur
max. junction temperature
Tvj--150°CBetriebstemperatur
operating temperature
Top-40-125°CLagertemperatur
storage temperature
T
-40-125
°C
Mechanische Eigenschaften / Mechanical properties
Innere Isolation
internal insulation
Al2O
preliminary data
CES
C,nom.
Grenzlastintegral der Diode
I2t - value, Diode VR = 0V, tp = 10ms, TVj = 125°C I2t
rise time (inductive load)
turn off delay time (inductive load)
turn-on energy loss per pulse
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data tP ≤ 10µsec, VGE ≤ 15V, RG = 30
Modulinduktivität stray inductance module
TC = 25°C, Transistor
C
tp = 1 ms
RMS, f = 50 Hz, t = 1 min.
CRM
FRM
tot
GES
ISOL
1100
A2s
min. typ. max.
IC = 50A, VGE = 15V, Tvj = 25°C
IC = 50A, VGE = 15V, Tvj = 125°C
IC = 2,5mA, VCE = VGE, Tvj = 25°C
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
VCE = 1700V, VGE = 0V, Tvj = 25°C
VCE = 1700V, VGE = 0V, Tvj = 125°C
VCE = 0V, VGE = 20V, Tvj = 25°C
IC = 50A, VCE = 900V
CE sat
- 3,2 - V
GE(th)
ies
CES
- 1,5 - mA
GES
d,on
VGE = ±15V, RG = 30Ω, Tvj = 25°C - 0,1 - µs
VGE = ±15V, RG = 30Ω, Tvj = 125°C - 0,1 - µs
IC = 50A, VCE = 900V
r
VGE = ±15V, RG = 30Ω, Tvj = 25°C - 0,1 - µs
VGE = ±15V, RG = 30Ω, Tvj = 125°C - 0,1 - µs
IC = 50A, VCE = 900V
d,off
VGE = ±15V, RG = 30Ω, Tvj = 25°C - 0,8 - µs
VGE = ±15V, RG = 30Ω, Tvj = 125°C - 0,9 - µs
IC = 50A, VCE = 900V
f
VGE = ±15V, RG = 30Ω, Tvj = 25°C - 0,03 - µs
VGE = ±15V, RG = 30Ω, Tvj = 125°C - 0,03 - µs
IC = 50A, VCE = 900V, VGE = 15V
on
RG = 30Ω, Tvj = 125°C, LS = 60nH - 26 - mWs
IC = 50A, VCE = 900V, VGE = 15V
off
RG = 30Ω, Tvj = 125°C, LS = 60nH - 14,5 - mWs
I
T
125°C, VCC=1000V - 200 - A
V
-L
x dI/dt
L
- 25 - nH
IF = 50A, VGE = 0V, Tvj = 25°C
Abschaltenergie pro Puls
reverse recovery energy
IF = 50A, VGE = 0V, Tvj = 125°C
IF = 50A, - diF/dt = 750A/µsec
VR = 900V, VGE = -10V, Tvj = 25°C
VR = 900V, VGE = -10V, Tvj = 125°C
IF = 50A, - diF/dt = 750A/µsec
VR = 900V, VGE = -10V, Tvj = 25°C
VR = 900V, VGE = -10V, Tvj = 125°C
IF = 50A, - diF/dt = 750A/µsec E
= 900V, VGE = -10V, Tvj = 25°C
VR = 900V, VGE = -10V, Tvj = 125°C
Diode / diode, DC
d
≤ 50µm / d
≤ 50µm - - 0,011 K/W
RM
r
thJC
thCK
stg
- 2 - V
- 36 - A
- 56 - A
- 6 - µAs
- 12 - µAs
- 2 - mWs
- 4 - mWs
- - 0,56 K/W
3
Kriechstrecke creepage distance 16 mm
Luftstrecke clearance 11 mm
CTI comperative tracking index 225
Anzugsdrehmoment f. mech. Befestigung mounting torque max. 5 Nm
Gewicht weight G 300 g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.
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