Infineon BSM200GB120DLCE3256 Data Sheet

Technische Information / Technical Information

IGBT-Module
IGBT-Modules

BSM200GB120DLC

Höchstzulässige Werte / Maximum rated values

Elektrische Eigenschaften / Electrical properties

Kollektor-Emitter-Sperrspannung
collector-emitter voltage

Kollektor-Dauergleichstrom

DC-collector current

Periodischer Kollektor Spitzenstrom
repetitive peak collector current

Gesamt-Verlustleistung
total power dissipation

Gate-Emitter-Spitzenspannung
gate-emitter peak voltage

Dauergleichstrom
DC forward current

Periodischer Spitzenstrom
repetitive peak forw. current

Grenzlastintegral der Diode

2

t - value, Diode

I

= 80 °C I

T

C

= 25 °C I

T

C

t

= 1 ms, TC = 80°C I

P

T

=25°C, Transistor P

C

t

= 1 ms I

P

= 0V, tp = 10ms, TVj = 125°C

V

R

vorläufige Daten
preliminary data

V

CES

C,nom.

CRM

V

GES

I

FRM

2

I

C

tot

F

t

1200 V

200 A
420 A

400 A

1,3 kW

+/- 20V V

200 A

400 A

-

kA2s

Isolations-Prüfspannung
insulation test voltage

RMS, f = 50 Hz, t = 1 min.

Charakteristische Werte / Characteristic values

Transistor / Transistor

Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage

Gate-Schwellenspannung
gate threshold voltage

Gateladung
gate charge

Eingangskapazität
input capacitance

Rückwirkungskapazität
reverse transfer capacitance

Kollektor-Emitter Reststrom
collector-emitter cut-off current

Gate-Emitter Reststrom
gate-emitter leakage current

IC = 200A, VGE = 15V, Tvj = 25°C V

= 200A, VGE = 15V, Tvj = 125°C

I

C

I

= 8mA, VCE = VGE, Tvj = 25°C V

C

V

= -15V...+15V Q

GE

f = 1MHz,T

f = 1MHz,T

V

CE

V

CE

V

CE

= 25°C,VCE = 25V, VGE = 0V C

vj

= 25°C,VCE = 25V, VGE = 0V C

vj

= 1200V, VGE = 0V, Tvj = 25°C I
= 1200V, VGE = 0V, Tvj = 125°C

= 0V, VGE = 20V, Tvj = 25°C I

V

ISOL

min. typ. max.

CE sat

GE(th)

res

CES

GES

- 2,1 2,6 V

- 2,4 V

4,5 5,5 6,5 V

---µC

G

-13-nF

ies

---nF

- 0,02 0,5 mA

- 0,5 mA

- - 400 nA

2,5 kV

prepared by: Mark Münzer date of publication: 02.12.1998

approved by: Jens Thurau revision: 1a

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DB_BSM200GB120DLC.xls

Technische Information / Technical Information

IGBT-Module
IGBT-Modules

BSM200GB120DLC

Charakteristische Werte / Characteristic values

Transistor / Transistor

= 200A, VCE = 600V

I

Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)

Anstiegszeit (induktive Last)
rise time (inductive load)

Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)

Fallzeit (induktive Last)
fall time (inductive load)

Einschaltverlustenergie pro Puls
turn-on energy loss per pulse

Abschaltverlustenergie pro Puls
turn-off energy loss per pulse

Kurzschlußverhalten
SC Data

Modulinduktivität
stray inductance module

C

V

= ±15V, RG = 4,7Ω, Tvj = 25°C t

GE

VGE = ±15V, RG = 4,7Ω, Tvj = 125°C
I

= 200A, VCE = 600V

C

V

= ±15V, RG = 4,7Ω, Tvj = 25°C t

GE

VGE = ±15V, RG = 4,7Ω, Tvj = 125°C
I

= 200A, VCE = 600V

C

V

= ±15V, RG = 4,7Ω, Tvj = 25°C t

GE

VGE = ±15V, RG = 4,7Ω, Tvj = 125°C
I

= 200A, VCE = 600V

C

V

= ±15V, RG = 4,7Ω, Tvj = 25°C t

GE

VGE = ±15V, RG = 4,7Ω, Tvj = 125°C
I

= 200A, VCE = 600V, VGE = 15V

C

R

= 4,7Ω, Tvj = 125°C, LS = 60nH E

G

IC = 200A, VCE = 600V, VGE = 15V
R

= 4,7Ω, Tvj = 125°C, LS = 60nH E

G

tP ≤ 10µsec, VGE ≤ 15V, RG = 4,7Ω
T

≤125°C, VCC=900V, V

Vj

CEmax=VCES -LsCE

·dI/dt I

vorläufige Daten
preliminary data

min. typ. max.

d,on

d,off

SC

L

sCE

- 0,05 - µs

- 0,06 - µs

- 0,05 - µs

r

- 0,07 - µs

- 0,57 - µs

- 0,57 - µs

- 0,04 - µs

f

- 0,05 - µs

- 22 - mWs

on

- 23 - mWs

off

- 1250 - A

- 25 - nH

Modul Leitungswiderstand, Anschlüsse – Chip
module lead resistance, terminals – chip

T

=25°C R

C

Charakteristische Werte / Characteristic values

Diode / Diode

Durchlaßspannung
forward voltage

Rückstromspitze
peak reverse recovery current

Sperrverzögerungsladung
recovered charge

Abschaltenergie pro Puls
reverse recovery energy

IF = 200A, VGE = 0V, Tvj = 25°C V

= 200A, VGE = 0V, Tvj = 125°C

I

F

I

= 200A, - diF/dt = 4000A/µsec

F

V

= 600V, VGE = -15V, Tvj = 25°C I

R

VR = 600V, VGE = -15V, Tvj = 125°C
I

= 200A, - diF/dt = 4000A/µsec

F

V

= 600V, VGE = -15V, Tvj = 25°C Q

R

VR = 600V, VGE = -15V, Tvj = 125°C
I

= 200A, - diF/dt = 4000A/µsec

F

V

= 600V, VGE = -15V, Tvj = 25°C E

R

= 600V, VGE = -15V, Tvj = 125°C

V

R

CC‘+EE‘

- 0,60 - mΩ

min. typ. max.

- 1,8 2,3 V

F

- 1,7 V

RM

rec

- 240 - A

- 300 - A

- 23 - µAs

r

- 42 - µAs

- 6 - mWs

- 14 - mWs

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DB_BSM200GB120DLC.xls