Datasheet BSM200GB120DLCE3256 Datasheet (Infineon)

Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM200GB120DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom repetitive peak collector current
Gesamt-Verlustleistung total power dissipation
Gate-Emitter-Spitzenspannung gate-emitter peak voltage
Dauergleichstrom DC forward current
Periodischer Spitzenstrom repetitive peak forw. current
Grenzlastintegral der Diode
2
t - value, Diode
I
= 80 °C I
T
C
= 25 °C I
T
C
t
= 1 ms, TC = 80°C I
P
T
=25°C, Transistor P
C
t
= 1 ms I
P
= 0V, tp = 10ms, TVj = 125°C
V
R
vorläufige Daten preliminary data
V
CES
C,nom.
CRM
V
GES
I
FRM
2
I
C
tot
F
t
1200 V
200 A 420 A
400 A
1,3 kW
+/- 20V V
200 A
400 A
-
kA2s
Isolations-Prüfspannung insulation test voltage
RMS, f = 50 Hz, t = 1 min.
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage
Gate-Schwellenspannung gate threshold voltage
Gateladung gate charge
Eingangskapazität input capacitance
Rückwirkungskapazität reverse transfer capacitance
Kollektor-Emitter Reststrom collector-emitter cut-off current
Gate-Emitter Reststrom gate-emitter leakage current
IC = 200A, VGE = 15V, Tvj = 25°C V
= 200A, VGE = 15V, Tvj = 125°C
I
C
I
= 8mA, VCE = VGE, Tvj = 25°C V
C
V
= -15V...+15V Q
GE
f = 1MHz,T
f = 1MHz,T
V
CE
V
CE
V
CE
= 25°C,VCE = 25V, VGE = 0V C
vj
= 25°C,VCE = 25V, VGE = 0V C
vj
= 1200V, VGE = 0V, Tvj = 25°C I = 1200V, VGE = 0V, Tvj = 125°C
= 0V, VGE = 20V, Tvj = 25°C I
V
ISOL
min. typ. max.
CE sat
GE(th)
res
CES
GES
- 2,1 2,6 V
- 2,4 V
4,5 5,5 6,5 V
---µC
G
-13-nF
ies
---nF
- 0,02 0,5 mA
- 0,5 mA
- - 400 nA
2,5 kV
prepared by: Mark Münzer date of publication: 02.12.1998
approved by: Jens Thurau revision: 1a
1(8)
DB_BSM200GB120DLC.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM200GB120DLC
Charakteristische Werte / Characteristic values
Transistor / Transistor
= 200A, VCE = 600V
I
Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load)
Anstiegszeit (induktive Last) rise time (inductive load)
Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load)
Fallzeit (induktive Last) fall time (inductive load)
Einschaltverlustenergie pro Puls turn-on energy loss per pulse
Abschaltverlustenergie pro Puls turn-off energy loss per pulse
Kurzschlußverhalten SC Data
Modulinduktivität stray inductance module
C
V
= ±15V, RG = 4,7, Tvj = 25°C t
GE
VGE = ±15V, RG = 4,7, Tvj = 125°C I
= 200A, VCE = 600V
C
V
= ±15V, RG = 4,7, Tvj = 25°C t
GE
VGE = ±15V, RG = 4,7, Tvj = 125°C I
= 200A, VCE = 600V
C
V
= ±15V, RG = 4,7, Tvj = 25°C t
GE
VGE = ±15V, RG = 4,7, Tvj = 125°C I
= 200A, VCE = 600V
C
V
= ±15V, RG = 4,7, Tvj = 25°C t
GE
VGE = ±15V, RG = 4,7, Tvj = 125°C I
= 200A, VCE = 600V, VGE = 15V
C
R
= 4,7, Tvj = 125°C, LS = 60nH E
G
IC = 200A, VCE = 600V, VGE = 15V R
= 4,7, Tvj = 125°C, LS = 60nH E
G
tP 10µsec, VGE 15V, RG = 4,7 T
125°C, VCC=900V, V
Vj
CEmax=VCES -LsCE
·dI/dt I
vorläufige Daten preliminary data
min. typ. max.
d,on
d,off
SC
L
sCE
- 0,05 - µs
- 0,06 - µs
- 0,05 - µs
r
- 0,07 - µs
- 0,57 - µs
- 0,57 - µs
- 0,04 - µs
f
- 0,05 - µs
- 22 - mWs
on
- 23 - mWs
off
- 1250 - A
- 25 - nH
Modul Leitungswiderstand, Anschlüsse – Chip module lead resistance, terminals – chip
T
=25°C R
C
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaßspannung forward voltage
Rückstromspitze peak reverse recovery current
Sperrverzögerungsladung recovered charge
Abschaltenergie pro Puls reverse recovery energy
IF = 200A, VGE = 0V, Tvj = 25°C V
= 200A, VGE = 0V, Tvj = 125°C
I
F
I
= 200A, - diF/dt = 4000A/µsec
F
V
= 600V, VGE = -15V, Tvj = 25°C I
R
VR = 600V, VGE = -15V, Tvj = 125°C I
= 200A, - diF/dt = 4000A/µsec
F
V
= 600V, VGE = -15V, Tvj = 25°C Q
R
VR = 600V, VGE = -15V, Tvj = 125°C I
= 200A, - diF/dt = 4000A/µsec
F
V
= 600V, VGE = -15V, Tvj = 25°C E
R
= 600V, VGE = -15V, Tvj = 125°C
V
R
CC‘+EE‘
- 0,60 - m
min. typ. max.
- 1,8 2,3 V
F
- 1,7 V
RM
rec
- 240 - A
- 300 - A
- 23 - µAs
r
- 42 - µAs
- 6 - mWs
- 14 - mWs
2(8)
DB_BSM200GB120DLC.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM200GB120DLC
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand thermal resistance, junction to case
Übergangs-Wärmewiderstand thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur maximum junction temperature
Betriebstemperatur operation temperature
Lagertemperatur storage temperature
Transistor / transistor, DC Diode/Diode, DC - - 0,18 K/W
pro Modul / per module
λ
= 1 W/m * K / λ
Παστε
= 1 W/m * K
grease
Mechanische Eigenschaften / Mechanical properties
vorläufige Daten preliminary data
min. typ. max.
R
thJC
R
thCK
T
T
T
stg
- - 0,09 K/W
- 0,01 - K/W
- - 150 °C
vj
-40 - 125 °C
op
-40 - 150 °C
Gehäuse, siehe Anlage case, see appendix
Innere Isolation internal insulation
Kriechstrecke creepage distance
Luftstrecke clearance
CTI comperative tracking index
Anzugsdrehmoment f. mech. Befestigung mounting torque
Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque
Gewicht weight
M1 3 6 Nm
terminals M6 M2 2,5 5 Nm
G 420 g
AL
2O3
20 mm
11 mm
275
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.
3(8)
DB_BSM200GB120DLC.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM200GB120DLC
vorläufige Daten preliminary data
8(8)
DB_BSM200GB120DLC.xls
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