Infineon BSM10GP120 Data Sheet
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM10GP120
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage
Durchlaßstrom Grenzeffektivwert
RMS forward current per chip
Dauergleichstrom
DC forward current
Stoßstrom Grenzwert
surge forward current
Grenzlastintegral
2
t - value
I
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
TC = 80°C I
tP = 10 ms, T
= 10 ms, T
t
P
t
= 10 ms, T
P
t
= 10 ms, T
P
= 25°C I
vj
= 150°C
vj
= 25°C
vj
= 150°C
vj
Tc = 80 °C
= 25 °C I
T
C
= 1 ms, TC =
t
P
TC = 25°C P
80 °C
V
RRM
I
FRMSM
d
FSM
2
t
I
V
CES
I
C,nom.
C
I
CRM
tot
V
GES
1600 V
40 A
10 A
300 A
230 A
450
260
A2s
A
1200 V
10 A
20 A
20 A
100 W
+/- 20V V
2
s
Diode Wechselrichter/ Diode Inverter
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral
2
t - value
I
Tc = 80 °C
tP = 1 ms I
V
= 0V, tp = 10ms, Tvj = 125°C
R
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
TC = 80 °C I
= 25 °C I
T
C
tP = 1 ms, TC = 80°C I
= 25°C P
T
C
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Diode Brems-Chopper/ Diode Brake-Chopper
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Tc = 80 °C
tP = 1 ms I
I
F
FRM
2
t
I
V
CES
C,nom.
C
CRM
tot
V
GES
I
F
FRM
10 A
20 A
18
A2s
1200 V
10 A
20 A
20 A
100 W
+/- 20V V
10 A
20 A
prepared by: Andreas Schulz date of publication:17.09.1999
approved by: M.Hierholzer revision: 5
1(11)
DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
BSM10GP120
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier
Durchlaßspannung
forward voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Sperrstrom
reverse current
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
Tvj = 150°C, IF =
Tvj = 150°C V
Tvj = 150°C r
= 150°C, VR =
T
vj
TC = 25°C R
= 15V, Tvj = 25°C, IC =
V
GE
= 15V, Tvj = 125°C, IC =
V
GE
V
= VGE, Tvj = 25°C, IC =
CE
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V
VGE = 0V, Tvj = 25°C, VCE =
= 0V, Tvj =125°C, VCE =
V
GE
= 0V, VGE =20V, Tvj =25°C I
V
CE
IC = I
, VCC =
Nenn
V
= ±15V, Tvj = 25°C, RG =
GE
V
= ±15V, Tvj = 125°C, RG =
GE
I
= I
, VCC =
C
Nenn
V
= ±15V, Tvj = 25°C, RG =
GE
= ±15V, Tvj = 125°C, RG =
V
GE
I
= I
, VCC =
C
Nenn
V
= ±15V, Tvj = 25°C, RG =
GE
V
= ±15V, Tvj = 125°C, RG =
GE
I
= I
, VCC =
C
Nenn
V
= ±15V, Tvj = 25°C, RG =
GE
= ±15V, Tvj = 125°C, RG =
V
GE
I
= I
, VCC =
C
Nenn
= ±15V, Tvj = 125°C, RG =
V
GE
L
I
= I
, VCC =
C
Nenn
V
= ±15V, Tvj = 125°C, RG =
GE
L
S
S
tP ≤ 10µs, VGE ≤ 15V, RG =
T
≤125°C, V
vj
CC
dI/dt = 800 A/µs
V
ISOL
2,5 kV
min. typ. max.
10 A
1600 V
V
F
(TO)
T
I
R
AA’+CC’
- 0,9 0,95 V
- - 0,8 V
- - 10,5
-2-mA
- 8 -
min. typ. max.
10 A
10 A - 2,75 - V
0,35 mA
1200 V
1200 V - 0,8 - mA
600 V
82 Ohm
82 Ohm - 45 - ns
600 V
82 Ohm
82 Ohm - 40 - ns
600 V
82 Ohm
82 Ohm - 285 - ns
600 V
82 Ohm
82 Ohm - 60 - ns
600 V
82 Ohm
=
75 nH
600 V
82 Ohm
=
75 nH
82 Ohm
=
720 V
V
V
I
CE sat
GE(TO)
C
ies
CES
GES
t
d,on
t
r
t
d,off
t
f
E
on
E
off
I
SC
- 2,4 2,85 V
4,5 5,5 6,5 V
- 0,6 - nF
- 0,5 500 µA
- - 300 nA
-40-ns
-45-ns
- 255 - ns
-40-ns
- 1,2 - mWs
- 1,1 - mWs
-45-A
mΩ
mΩ
2(11)
DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM10GP120
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Modulinduktivität
stray inductance module
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
Diode Wechselrichter/ Diode Inverter
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
Diode Brems-Chopper/ Diode Brake-Chopper
Durchlaßspannung
forward voltage
NTC-Widerstand/ NTC-Thermistor
Nennwiderstand
rated resistance
Abweichung von R
deviation of R
100
100
Verlustleistung
power dissipation
B-Wert
B-value
TC = 25°C R
V
= 0V, Tvj = 25°C, IF =
GE
= 0V, Tvj = 125°C, IF =
V
GE
I
, - diF/dt =
F=INenn
= -10V, Tvj = 25°C, VR =
V
GE
= -10V, Tvj = 125°C, VR =
V
GE
I
, - diF/dt =
F=INenn
= -10V, Tvj = 25°C, VR =
V
GE
= -10V, Tvj = 125°C, VR =
V
GE
I
, - diF/dt =
F=INenn
= -10V, Tvj = 25°C, VR =
V
GE
V
= -10V, Tvj = 125°C, VR =
GE
V
= 15V, Tvj = 25°C, IC =
GE
= 15V, Tvj = 125°C, IC =
V
GE
V
= VGE, Tvj = 25°C, IC =
CE
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V
VGE = 0V, Tvj = 25°C, VCE =
= 0V, Tvj = 125°C, VCE =
V
GE
V
= 0V, VGE = 20V, Tvj = 25°C I
CE
T
= 25°C, IF =
vj
= 125°C, IF =
T
vj
TC = 25°C R
TC = 100°C, R
= 25°C P
T
C
= 493 Ω
100
R2 = R1 exp [B(1/T2 - 1/T1)] B
min. typ. max.
L
σCE
CC’+EE’
- - 100 nH
- 11 -
mΩ
min. typ. max.
10 A
10 A - 2,1 - V
400A/µs
600 V
600 V - 13 - A
400A/µs
600 V
600 V - 1,5 - µAs
400A/µs
600 V
600 V - 0,54 - mWs
V
I
RM
Q
E
RQ
- 2,2 2,55 V
F
-11-A
- 0,84 - µAs
r
- 0,3 - mWs
min. typ. max.
10,0 A
10,0 A - 2,75 - V
0,35mA
1200 V
1200 V - 0,8 - mA
V
V
I
CE sat
GE(TO)
C
ies
CES
GES
- 2,4 2,85 V
4,5 5,5 6,5 V
- 0,6 - nF
- 0,5 500 µA
- - 300 nA
min. typ. max.
10,0 A
10,0 A - 2,1 - V
V
- 2,2 2,55 V
F
min. typ. max.
25
∆R/R
25
25/50
-5-
-5 5 %
3375 K
kΩ
20 mW
3(11)
DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM10GP120
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand Gleichr. Diode/ Rectif. Diode
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
Gleichr. Diode/ Rectif. Diode
Trans. Wechsr./ Trans. Inverter - - 1,2 K/W
Diode Wechsr./ Diode Inverter - - 2,3 K/W
Trans. Bremse/ Trans. Brake - - 1,2 K/W
Diode Bremse/ Diode Brake - - 2,3 K/W
λ
Paste
Trans. Wechsr./ Trans. Inverter
Diode Wechsr./ Diode Inverter - 0,08 - K/W
λ
grease
Mechanische Eigenschaften / Mechanical properties
=1W/m*K
=1W/m*K
min. typ. max.
R
thJC
R
thCK
T
T
op
T
stg
- - 1 K/W
- 0,08 - K/W
- 0,04 - K/W
- - 150 °C
vj
-40 - 125 °C
-40 - 125 °C
Innere Isolation
internal insulation
CTI
comperative tracking index
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Gewicht
weight
Al2O
225
M3Nm
±10%
G 180 g
3
4(11)
DB-PIM-9.xls
Loading...