Infineon BSC059N03S G Schematic [ru]
BSC059N03S G
OptiMOS®2 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC1 for target applications
• Logic level / N-channel
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• Superior thermal resistance
• Avalanche rated
• dv/dt rated
• Pb-free lead plating; RoHS compliant
Type Package Marking
BSC059N03S G PG-TDSON-8 59N03S
Product Summary
V
DS
R
DS(on),max
I
D
30 V
5.5
73 A
PG-TDSON-8
mΩ
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt dv /dt
Gate source voltage
Power dissipation
=25 °C, unless otherwise specified
j
I
D
I
D,pulse
E
AS
TC=25 °C
T
=100 °C
C
=25 °C,
T
A
R
=45 K/W
thJA
TC=25 °C
ID=50 A, RGS=25 Ω
=50 A, VDS=24 V,
I
D
di /dt =200 A/µs,
T
=150 °C
j,max
V
GS
P
tot
TC=25 °C
=25 °C,
T
A
R
=45 K/W
thJA
Value
73 A
46
2)
3)
17.5
200
150 mJ
6 kV/µs
±20 V
48 W
2)
2.8
, T
Operating and storage temperature
T
j
stg
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Rev. 1.53 page 1 2008-04-28
BSC059N03S G
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
Electrical characteristics, at T
=25 °C, unless otherwise specified
j
R
thJC
R
thJA
minimal footprint - - 62
6 cm
2
cooling area
2)
- - 2.6 K/W
--45
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSSVGS
V
GS(th)
I
DSS
=0 V, ID=1 mA
VDS=VGS, ID=35 µA
VDS=30 V, VGS=0 V,
T
=25 °C
j
V
=30 V, VGS=0 V,
DS
T
=125 °C
j
30 - - V
1.2 1.6 2
- 0.1 1 µA
- 10 100
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
1)
J-STD20 and JESD22
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3
I
GSS
R
DS(on)VGS
R
G
g
fs
VGS=20 V, VDS=0 V
=4.5 V, ID=50 A
=10 V, ID=50 A
V
GS
|VDS|>2|ID|R
I
=50 A
D
DS(on)max
- 10 100 nA
- 6.9 8.6
- 4.6 5.5
0.4 0.9 1.8
,
42 84 - S
mΩ
Ω
Rev. 1.53 page 2 2008-04-28
BSC059N03S G
g
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Char
e Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
4)
C
C
C
t
t
t
t
Q
Q
Q
Q
iss
oss
rss
d(on)
r
d(off)
f
gs
g(th)
gd
sw
V
=0 V, VDS=15 V,
GS
f =1 MHz
V
=15 V, VGS=10 V,
DD
=25 A, RG=2.7 Ω
I
D
=15 V, ID=25 A,
V
DD
V
=0 to 5 V
GS
- 2010 2670 pF
- 720 950
- 93 140
- 5.7 8.5 ns
- 4.8 7.2
-2233
- 3.8 5.7
- 6.3 8.4 nC
- 3.2 4.3
- 4.0 6.0
- 7.1 10
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Q
V
Q
Q
g
plateau
g(sync)
oss
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
4)
See figure 16 for gate charge parameter definition
I
S
I
S,pulse
V
SD
Q
rr
VDS=0.1 V,
V
=0 to 5 V
GS
VDD=15 V, VGS=0 V
TC=25 °C
VGS=0 V, IF=48 A,
T
=25 °C
j
VR=15 V, IF=IS,
di
/dt =400 A/µs
F
-1521
- 3.1 - V
-1418nC
-1723
- - 48 A
- - 200
- 0.87 1.1 V
- - 10 nC
Rev. 1.53 page 3 2008-04-28
1 Power dissipation 2 Drain current
P
=f(TC) ID=f(TC); VGS≥10 V
tot
BSC059N03S G
60
80
50
60
40
[W]
30
tot
P
[A]
D
I
40
20
20
10
0
0 40 80 120 160
TC [°C]
0
0 40 80 120 160
TC [°C]
3 Safe operating area 4 Max. transient thermal impedance
I
=f(VDS); TC=25 °C; D =0 Z
D
parameter: t
10
p
3
1000
limited by on-state
resistance
1 µs
=f(tp)
thJC
parameter: D =tp/T
1
10
10
100 µs
10
10 µs
10 ms
1
1 ms
10
0.5
0
1
10
0.2
[K/W]
0.1
thJC
Z
0.05
-1
0.1
10
0.02
0.01
single pulse
-2
0.01
0 0 0 0 0 0
10
2
10
-6
10
-5
10
-4
tp [s]
10
-3
10
-2
10
-1
2
100
10
DC
1
10
10
[A]
D
I
0
1
10
-1
0.1
0.1 1 10 100
10
10
-1
10
0
VDS [V]
Rev. 1.53 page 4 2008-04-28
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