Infineon BSC047N08NS3 G Schematic [ru]
BSC047N08NS3 G
OptiMOS
(TM)
3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R
• Very low on-resistance R
product (FOM)
DS(on)
DS(on)
• Superior thermal resistance
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
1)
• Qualified according to JEDEC
Type
BSC047N08NS3 G
for target applications
Product Summary
V
DS
R
DS(on),max
I
D
80 V
4.7
100 A
mΩ
Package
Marking
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
1)
J-STD20 and JESD22
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
4)
See figure 13 for more detailed information
PG-TDSON-8
047N08NS
=25 °C, unless otherwise specified
j
I
D
3)
4)
I
D,pulse
E
AS
V
GS
VGS=10 V, TC=25 °C
V
=10 V, TC=100 °C
GS
V
=10 V, TA=25 °C,
R
GS
=50 K/W
thJA
2)
TC=25 °C
ID=50 A, RGS=25 Ω
Value
100 A
79
18
400
310 mJ
±20 V
Rev. 2.3 page 1 2008-06-19
Maximum ratings, at Tj=25 °C, unless otherwise specified
BSC047N08NS3 G
Parameter Symbol Conditions Unit
stg
TC=25 °C
=25 °C,
T
A
R
=50 K/W
thJA
2)
Power dissipation
Operating and storage temperature
P
tot
, T
T
j
Value
125 W
2.5
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
Electrical characteristics, at T
=25 °C, unless otherwise specified
j
R
thJC
R
thJA
minimal footprint - - 62
6 cm
2
cooling area
2)
- - 1 K/W
--50
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V
(BR)DSSVGS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
g
fs
=0 V, ID=1 mA
VDS=VGS, ID=90 µA
VDS=80 V, VGS=0 V,
T
=25 °C
j
V
=80 V, VGS=0 V,
DS
T
=125 °C
j
VGS=20 V, VDS=0 V
VGS=10 V, ID=50 A
=6 V, ID=25 A
V
GS
|VDS|>2|ID|R
I
=100 A
D
DS(on)max
80 - - V
2 2.8 3.5
- 0.1 1 µA
- 10 100
- 10 100 nA
- 3.9 4.7
- 5.6 8.9
- 2.2 -
,
60 120 - S
mΩ
Ω
Rev. 2.3 page 2 2008-06-19
BSC047N08NS3 G
g
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Char
e Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
C
iss
=0 V, VDS=40 V,
V
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
5)
Q
gs
Q
g(th)
Q
gd
Q
sw
GS
f =1 MHz
V
=40 V, VGS=10 V,
DD
=25 A, RG=1.6 Ω
I
D
=40 V, ID=25 A,
V
DD
V
=0 to 10 V
GS
- 3600 4800 pF
- 960 1300
-36-
-18-ns
-17-
-44-
-11-
-16-nC
-10-
-10-
-17-
Gate charge total
Gate plateau voltage
Output charge
Q
V
Q
g
plateau
oss
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
5)
See figure 16 for gate charge parameter definition
I
S
I
S,pulse
V
SD
t
rr
Q
rr
VDD=40 V, VGS=0 V
=25 °C
T
C
VGS=0 V, IF=50 A,
T
=25 °C
j
VR=40 V, IF=25A,
di
/dt =100 A/µs
F
-5269
- 4.8 - V
-7093nC
- - 100 A
- - 400
- 1.0 1.2 V
-61-ns
- 109 - nC
Rev. 2.3 page 3 2008-06-19
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