Infineon BSC030N04NS G Schematic [ru]
BSC030N04NS G
OptiMOS®3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
• N-channel
• Normal level
• Excellent gate charge x R
• Very low on-resistance R
• Superior thermal resistance
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
Type Package Marking
BSC030N04NS G PG-TDSON-8 030N04NS
1)
for target applications
product (FOM)
DS(on)
DS(on)
Product Summary
V
DS
R
DS(on),max
I
D
40 V
3.0
100 A
PG-TDSON-8
mΩ
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
Avalanche current, single pulse
Avalanche energy, single pulse
Gate source voltage
1)
J-STD20 and JESD22
=25 °C, unless otherwise specified
j
I
D
VGS=10 V, TC=25 °C
V
V
R
3)
4)
I
D,pulse
I
AS
E
AS
V
GS
TC=25 °C
TC=25 °C
ID=50 A, RGS=25 Ω
=10 V, TC=100 °C
GS
=10 V, TA=25 °C,
GS
=50 K/W
thJA
2)
Value
100 A
84
23
400
50
115 mJ
±20 V
Rev. 1.01 page 1 2008-08-12
Maximum ratings, at Tj=25 °C, unless otherwise specified
BSC030N04NS G
Parameter Symbol Conditions Unit
stg
TC=25 °C
=25 °C,
T
A
R
=50 K/W
thJA
2)
Power dissipation
Operating and storage temperature
P
tot
, T
T
j
Value
83 W
2.5
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
Electrical characteristics, at T
=25 °C, unless otherwise specified
j
R
thJC
R
thJA
6 cm2 cooling area
2)
- - 1.5 K/W
--50
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
4)
See figure 13 for more detailed information
V
(BR)DSSVGS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
g
fs
=0 V, ID=1 mA
VDS=VGS, ID=49 µA
VDS=40 V, VGS=0 V,
T
=25 °C
j
V
=40 V, VGS=0 V,
DS
T
=125 °C
j
VGS=20 V, VDS=0 V
VGS=10 V, ID=50 A
|VDS|>2|ID|R
I
=50 A
D
DS(on)max
40 - - V
2-4
- 0.1 1 µA
- 10 100
- 10 100 nA
- 2.5 3
- 1.6 -
,
46 91 - S
mΩ
Ω
Rev. 1.01 page 2 2008-08-12
BSC030N04NS G
g
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Char
e Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
C
iss
=0 V, VDS=20 V,
V
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
5)
Q
gs
Q
g(th)
Q
gd
Q
sw
GS
f =1 MHz
V
=20 V, VGS=10 V,
DD
=30 A, RG=1.6 Ω
I
D
=20 V, ID=30 A,
V
DD
V
=0 to 10 V
GS
- 3700 4900 pF
- 1100 1500
-40-
-16-ns
- 4.0 -
-23-
- 5.0 -
-19-nC
-11-
- 5.7 -
- 13.4 -
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Q
V
Q
Q
g
plateau
g(sync)
oss
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
5)
See figure 16 for gate charge parameter definition
I
S
I
S,pulse
V
SD
Q
rr
VDS=0.1 V,
V
=0 to 10 V
GS
VDD=20 V, VGS=0 V
TC=25 °C
VGS=0 V, IF=50 A,
T
=25 °C
j
VR=20 V, IF=IS,
di
/dt =400 A/µs
F
-4661
- 5.1 - V
-44-nC
-39-
- - 69 A
- - 400
- 0.87 1.2 V
-45-nC
Rev. 1.01 page 3 2008-08-12
1 Power dissipation 2 Drain current
P
=f(TC) ID=f(TC); VGS≥10 V
tot
BSC030N04NS G
90
120
80
100
70
60
80
50
[W]
tot
40
P
30
[A]
D
I
60
40
20
20
10
0
0 40 80 120 160
TC [°C]
0
0 40 80 120 160
TC [°C]
3 Safe operating area 4 Max. transient thermal impedance
I
=f(VDS); TC=25 °C; D =0 Z
D
parameter: t
3
10
p
limited by on-state
resistance
1 µs
=f(tp)
thJC
parameter: D =tp/T
10
10 µs
10
10
10
10
[A]
D
I
-1
2
1
0
-1
10
10
10 ms
DC
0
VDS [V]
100 µs
10
1 ms
1
10
1
0.5
0.2
[K/W]
thJC
0.1
Z
0.1
0.05
0.02
0.01
single pulse
0000001
0.01
-1
-2
-3
-4
-5
2
10
-6
10
10
10
tp [s]
10
10
10
0
Rev. 1.01 page 4 2008-08-12
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