Infineon BSC030N03LS G Schematic [ru]
BSC030N03LS G
OptiMOS®3 Power-MOSFET
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
• N-channel
• Logic level
• Excellent gate charge x R
• Very low on-resistance R
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
Type Package Marking
BSC030N03LS G PG-TDSON-8 030N03LS
1)
for target applications
product (FOM)
DS(on)
DS(on)
Product Summary
V
DS
R
DS(on),max
I
D
30 V
3
100 A
PG-TDSON-8
mΩ
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
Avalanche current, single pulse
Avalanche energy, single pulse
Reverse diode dv /dt dv /dt
=25 °C, unless otherwise specified
j
I
D
VGS=10 V, TC=25 °C
V
V
V
T
V
R
3)
4)
I
D,pulse
I
AS
E
AS
TC=25 °C
TC=25 °C
ID=50 A, RGS=25 Ω
I
di /dt =200 A/µs,
T
=10 V, TC=100 °C
GS
=4.5 V, TC=25 °C
GS
=4.5 V,
GS
=100 °C
C
=10 V, TA=25 °C,
GS
=50 K/W
thJA
=50 A, VDS=24 V,
D
=150 °C
j,max
2)
Value
100 A
77
98
62
23
400
50
75 mJ
6 kV/µs
Gate source voltage
1)
J-STD20 and JESD22
V
GS
±20 V
Rev. 1.24 page 1 2008-05-29
Maximum ratings, at Tj=25 °C, unless otherwise specified
BSC030N03LS G
Parameter Symbol Conditions Unit
stg
TC=25 °C
=25 °C,
T
A
R
=50 K/W
thJA
2)
Power dissipation
Operating and storage temperature
P
tot
, T
T
j
Value
69 W
2.5
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
Electrical characteristics, at T
=25 °C, unless otherwise specified
j
R
thJC
R
thJA
6 cm2 cooling area
2)
- - 1.8 K/W
--50
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
V
(BR)DSSVGS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
g
fs
=0 V, ID=1 mA
VDS=VGS, ID=250 µA
VDS=30 V, VGS=0 V,
T
=25 °C
j
V
=30 V, VGS=0 V,
DS
T
=125 °C
j
VGS=20 V, VDS=0 V
VGS=4.5 V, ID=30 A
=10 V, ID=30 A
V
GS
|VDS|>2|ID|R
I
=30 A
D
DS(on)max
30 - - V
1 - 2.2
- 0.1 1 µA
- 10 100
- 10 100 nA
- 3.8 4.7
- 2.5 3
0.7 1.5 2.6
,
49 98 - S
mΩ
Ω
Rev. 1.24 page 2 2008-05-29
BSC030N03LS G
g
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Char
e Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
C
iss
=0 V, VDS=15 V,
V
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
5)
Q
gs
Q
g(th)
Q
gd
Q
sw
GS
f =1 MHz
V
=15 V, VGS=10 V,
DD
=30 A, RG=1.6 Ω
I
D
=15 V, ID=30 A,
V
DD
V
=0 to 4.5 V
GS
- 3200 4300 pF
- 1200 1600
-66-
- 7.3 - ns
- 5.2 -
-29-
- 4.8 -
- 9.5 13 nC
- 5.2 6.9
- 4.6 7.6
- 9.0 13
Gate charge total
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
Q
V
Q
Q
Q
g
plateau
g
g(sync)
oss
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
4)
See figure 13 for more detailed information
5)
See figure 16 for gate charge parameter definition
I
S
I
S,pulse
V
SD
Q
rr
VDD=15 V, ID=30 A,
V
=0 to 10 V
GS
VDS=0.1 V,
V
=0 to 4.5 V
GS
VDD=15 V, VGS=0 V
TC=25 °C
VGS=0 V, IF=30 A,
T
=25 °C
j
VR=15 V, IF=IS,
di
/dt =400 A/µs
F
-2027
- 3.0 - V
-4255
-1723nC
-3141
- - 63 A
- - 400
- 0.82 1.1 V
- - 20 nC
Rev. 1.24 page 3 2008-05-29
1 Power dissipation 2 Drain current
P
=f(TC) ID=f(TC); VGS≥10 V
tot
BSC030N03LS G
80
120
100
60
80
[W]
40
tot
P
[A]
D
I
60
40
20
20
0
0 40 80 120 160
TC [°C]
0
0 40 80 120 160
TC [°C]
3 Safe operating area 4 Max. transient thermal impedance
I
=f(VDS); TC=25 °C; D =0 Z
D
parameter: t
10
3
p
limited by on-state
resistance
1 µs
=f(tp)
thJC
parameter: D =tp/T
10
10 µs
2
[A]
D
I
10
10
10
10
DC
1
0
-1
10
-1
10
0
VDS [V]
100 µs
10
1 ms
10 ms
1
10
1
0.5
0.2
[K/W]
0.1
thJC
Z
0.05
0.1
0.02
0.01
single pulse
0000001
0.01
2
10
-6
10
-4
-5
10
10
-2
-3
10
10
0
-1
10
tp [s]
Rev. 1.24 page 4 2008-05-29
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