Infineon BSC019N02KS G Schematic [ru]
BSC019N02KS G
OptiMOS®2 Power-Transistor
Features
• For fast switching converters and sync. rectification
1)
• Qualified according to JEDEC
• Super Logic level 2.5V rated; N-channel
• Excellent gate charge x R
• Very low on-resistance R
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
Type Package Marking
for target applications
product (FOM)
DS(on)
DS(on)
Product Summary
V
DS
R
DS(on),max
I
D
20 V
1.95
100 A
PG-TDSON-8
mΩ
BSC019N02KS G PG-TDSON-8 19N02KS
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt dv /dt
=25 °C, unless otherwise specified
j
I
D
I
D,pulse
E
AS
VGS=4.5 V, TC=25 °C
VGS=4.5 V, TC=100 °C
VGS=2.5 V, TC=25 °C
VGS=2.5 V, TC=100 °C
VGS=4.5 V, TA=25 °C,
R
=45 K/W
thJA
TC=25 °C
ID=50 A, RGS=25 Ω
=50 A, VDS=16 V,
I
D
di /dt =200 A/µs,
T
=150 °C
j,max
Value
100 A
100
100
95
2)
3)
30
200
800 mJ
6 kV/µs
Gate source voltage
1)
J-STD20 and JESD22
V
GS
±12 V
Rev. 1.1 page 1 2008-08-11
Maximum ratings, at Tj=25 °C, unless otherwise specified
BSC019N02KS G
Parameter Symbol Conditions Unit
stg
TC=25 °C
=25 °C,
T
A
R
=45 K/W
thJA
2)
Power dissipation
Operating and storage temperature
P
tot
, T
T
j
Value
104 W
2.8
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
Electrical characteristics, at T
=25 °C, unless otherwise specified
j
R
thJC
R
thJA
minimal footprint - - 62
6 cm
2
cooling area
2)
- - 1.2 K/W
--45
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3
V
(BR)DSSVGS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
g
fs
=0 V, ID=1 mA
VDS=VGS, ID=350 µA
VDS=20 V, VGS=0 V,
T
=25 °C
j
V
=20 V, VGS=0 V,
DS
T
=125 °C
j
VGS=12 V, VDS=0 V
VGS=2.5 V, ID=50 A
=4.5 V, ID=50 A
V
GS
|VDS|>2|ID|R
I
=50 A
D
DS(on)max
20 - - V
0.7 0.95 1.2
--1µA
- - 100
- - 100 nA
- 2.3 3.0
- 1.6 1.95
- 1.9 -
,
100 210 - S
mΩ
Ω
Rev. 1.1 page 2 2008-08-11
BSC019N02KS G
g
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Char
e Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
C
iss
=0 V, VDS=10 V,
V
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
4)
Q
gs
Q
g(th)
Q
gd
Q
sw
GS
f =1 MHz
V
=10 V, VGS=4.5 V,
DD
=50 A, RG=1.6 Ω
I
D
=10 V, ID=50 A,
V
DD
V
=0 to 4.5 V
GS
- 9600 13000 pF
- 2700 3600
- 410 620
-15-ns
- 187 -
-95-
-8-
- 19 25.1 nC
- 9 12.1
- 11 16.9
- 21 29.8
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Q
V
Q
Q
g
plateau
g(sync)
oss
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
4)
See figure 16 for gate charge parameter definition
I
S
I
S,pulse
V
SD
Q
rr
VDS=0.1 V,
V
=0 to 4.5 V
GS
VDD=10 V, VGS=0 V
TC=25 °C
VGS=0 V, IF=50 A,
T
=25 °C
j
VR=10 V, IF=50 A,
di
/dt =100 A/µs
F
- 64 85.0
- 2.0 - V
- 59 78.5 nC
-37-
- - 100 A
- - 400
- 0.8 1.2 V
- 55.6 - nC
Rev. 1.1 page 3 2008-08-11
1 Power dissipation 2 Drain current
P
=f(TC) ID=f(TC); VGS≥4.5 V
tot
BSC019N02KS G
120
100
80
[W]
60
tot
P
40
20
0
0 40 80 120 160
TC [°C]
120
100
80
60
[A]
D
I
40
20
0
0 40 80 120 160
TC [°C]
3 Safe operating area 4 Max. transient thermal impedance
I
=f(VDS); TC=25 °C; D =0 Z
D
parameter: t
[A]
D
I
10
10
10
10
3
2
1
0
p
limited by on-state
resistance
10 µs
100 µs
1 ms
10 ms
DC
=f(tp)
thJC
parameter: D =tp/T
1
10
0
10
0.5
0.2
0.1
-1
[K/W]
10
0.05
thJC
Z
0.02
0.01
-2
10
single pulse
10
-1
10
-1
10
0
10
1
10
2
VDS [V]
10
-3
0
-1
-2
-3
-4
-5
10
-6
10
10
10
10
10
10
tp [s]
Rev. 1.1 page 4 2008-08-11
Loading...