Infineon BSC014N03MS G Schematic [ru]

BSC014N03MS G

OptiMOS®3 M-Series Power-MOSFET

Features

• Optimized for 5V driver application (Notebook, VGA, POL)

• Low FOM

• 100% avalanche tested

• N-channel

• Very low on-resistance R

• Excellent gate charge x R

• Qualified according to JEDEC

• Superior thermal resistance

• Pb-free plating; RoHS compliant

Type Package Marking

BSC014N03MS G PG-TDSON-8 014N03MS

for High Frequency SMPS

SW

@ VGS=4.5 V

DS(on)

product (FOM)

DS(on)

1)

for target applications

Product Summary

V

DS

R

DS(on),max

VGS=10 V 1.4

VGS=4.5 V 1.75

I

D

30 V

mΩ

100 A

PG-TDSON-8

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

Avalanche current, single pulse

Avalanche energy, single pulse

Gate source voltage

1)

J-STD20 and JESD22

=25 °C, unless otherwise specified

j

I

D

VGS=10 V, TC=25 °C

V

V

V
T

V

R

3)

4)

I

D,pulse

I

AS

E

AS

V

GS

TC=25 °C

TC=25 °C

ID=50 A, RGS=25 Ω

=10 V, TC=100 °C

GS

=4.5 V, TC=25 °C

GS

=4.5 V,

GS

=100 °C

C

=4.5 V, TA=25 °C,

GS

=50 K/W

thJA

2)

Value

100 A

100

100

100

30

400

50

340 mJ

±20 V

Rev. 1.1 page 1 2008-04-17

Maximum ratings, at Tj=25 °C, unless otherwise specified

BSC014N03MS G

Parameter Symbol Conditions Unit

stg

TC=25 °C

=25 °C,

T

A

R

=50 K/W

thJA

2)

Power dissipation

Operating and storage temperature

P

tot

, T

T

j

Value

139 W

2.5

-55 ... 150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

Device on PCB

Electrical characteristics, at T

=25 °C, unless otherwise specified

j

R

thJC

R

thJA

6 cm2 cooling area

2)

- - 0.9 K/W

--50

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

Transconductance

2)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

3)

See figure 3 for more detailed information

V

(BR)DSSVGS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

R

G

g

fs

=0 V, ID=1 mA

VDS=VGS, ID=250 µA

VDS=30 V, VGS=0 V,
T

=25 °C

j

V

=30 V, VGS=0 V,

DS

T

=125 °C

j

VGS=16 V, VDS=0 V

VGS=4.5 V, ID=30 A

=10 V, ID=30 A

V

GS

|VDS|>2|ID|R

I

=30 A

D

DS(on)max

30 - - V

1-2

- 0.1 1 µA

- 10 100

- 10 100 nA

- 1.4 1.75

- 1.2 1.4

0.7 1.5 2.6

,

70 140 - S

mΩ

Ω

Rev. 1.1 page 2 2008-04-17

BSC014N03MS G

g

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Char

e Characteristics

Gate to source charge

Gate charge at threshold

Gate to drain charge

Switching charge

C

iss

=0 V, VDS=15 V,

V

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

5)

Q

gs

Q

g(th)

Q

gd

Q

sw

GS

f =1 MHz

V

=15 V, VGS=4.5 V,

DD

=30 A, RG=1.6 Ω

I

D

=15 V, ID=30 A,

V

DD

V

=0 to 4.5 V

GS

- 10000 13000 pF

- 2600 3500

- 210 -

-32-ns

-16-

-43-

-16-

-2634nC

-1621

-1322

-2335

Gate charge total

Gate plateau voltage

Gate charge total

Gate charge total, sync. FET

Output charge

Q

V

Q

Q

Q

g

plateau

g

g(sync)

oss

Reverse Diode

Diode continuous forward current

Diode pulse current

Diode forward voltage

Reverse recovery charge

4)

See figure 13 for more detailed information

5)

See figure 16 for gate charge parameter definition

I

S

I

S,pulse

V

SD

Q

rr

VDD=15 V, ID=30 A,
V

=0 to 10 V

GS

VDS=0.1 V,
V

=0 to 4.5 V

GS

VDD=15 V, VGS=0 V

TC=25 °C

VGS=0 V, IF=30 A,
T

=25 °C

j

VR=15 V, IF=IS,

di

/dt =400 A/µs

F

-6384

- 2.6 - V

- 130 173

-5573nC

-7093

- - 100 A

- - 400

- 0.79 1.1 V

- - 30 nC

Rev. 1.1 page 3 2008-04-17

1 Power dissipation 2 Drain current

P

=f(TC) ID=f(TC)

tot

parameter: V

GS

BSC014N03MS G

150

120

120

100

4.5 V

80

90

[W]

tot

P

[A]

D

I

60

60

40

30

0

0 40 80 120 160

TC [°C]

20

0

0 40 80 120 160

TC [°C]

3 Safe operating area 4 Max. transient thermal impedance

I

=f(VDS); TC=25 °C; D =0 Z

D

parameter: t

10

3

p

limited by on-state
resistance

1 µs

=f(tp)

thJC

parameter: D =tp/T

10

10 V

10 µs

2

[A]

D

I

10

10

10

10

DC

1

0

-1

10

-1

10

0

VDS [V]

100 µs

10

1 ms

10 ms

1

10

1

0.5

[K/W]

thJC

0.2

Z

0.1

0.1

0.05

0.02

0.01

single pulse

0000001

0.01

2

10

-6

10

-4

-5

10

10

-2

-3

10

10

0

-1

10

tp [s]

Rev. 1.1 page 4 2008-04-17