INFINEON BSA 223SP User Manual
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Preliminary data
OptiMOS-P Small-Signal-Transistor
Feature
• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
Type Package Ordering Code
BSA 223SP SC-75 Q67042-S4176
Marking
BPs
BSA 223SP
Product Summary
V
DS
R
DS(on)
I
D
SC-75
-20 V
1.2 Ω
-0.39 A
Gate
pin1
Source
pin 2
Drain
pin 3
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TA=25°C
TA=70°C
Pulsed drain current
TA=25°C
Avalanche energy, single pulse
ID=-0.39 A , VDD=-10V, RGS=25Ω
Reverse diode dv/dt
IS=-0.39A, VDS=-16V, di/dt=200A/µs, T
jmax
=150°C
I
I
E
dv/dt
Gate source voltage V
Power dissipation
TA=25°C
P
Operating and storage temperature T
D
D puls
AS
GS
tot
, T
j
stg
-0.39
-0.31
-1.56
1.4 mJ
-6 kV/µs
±12
0.25 W
-55... +150
A
V
°C
IEC climatic category; DIN IEC 68-1 55/150/56
2002-08-26Page 1
Preliminary data
BSA 223SP
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point R
Thermal resistance, junction - ambient, leaded R
thJS
thJA
- - 150 K/W
- - 500
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=-250µA
Gate threshold voltage, VGS = V
ID=-1.5µA
Zero gate voltage drain current
VDS=-20V, VGS=0, Tj=25°C
VDS=-20V, VGS=0, Tj=150°C
Gate-source leakage current
DS
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
-20 - - V
-0.6 -0.9 -1.2
-
-
-0.1
-10
-1
-100
- -10 -100 nA
µA
VGS=-12V, VDS=0
Drain-source on-state resistance
VGS=-2.5V, ID=-0.29A
Drain-source on-state resistance
VGS=-4.5, ID=-0.39A
R
DS(on)
R
DS(on)
- 1.27 2.1
- 0.7 1.2
Ω
2002-08-26Page 2
Preliminary data
BSA 223SP
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
fs
iss
oss
rss
d(on)
r
d(off)
f
gs
gd
g
VDS≥2*ID*R
ID=-0.31A
VGS=0, VDS=-15V,
f=1MHz
DS(on)max
,
0.35 0.7 - S
- 45 56 pF
- 21 26
- 17 22
VDD=-10V, VGS=-4.5V,
ID=-0.39A, RG=6Ω
- 3.8 5.7 ns
- 5 7.5
- 5.1 7.6
- 3.2 4.8
VDD=-10V, ID=-0.39A - -0.04 -0.05 nC
- -0.4 -0.5
VDD=-10V, ID=-0.39A,
VGS=0 to -4.5V
- -0.5 -0.62
Gate plateau voltage V
Reverse Diode
Inverse diode continuous
I
forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
(plateau)
S
SM
SD
rr
rr
VDD=-10V, ID=-0.39A - -2.2 -2.7 V
TA=25°C - - -0.39 A
- - -1.56
VGS=0, IF=-0.39 - -1 -1.33 V
VR=-10V, |IF| = |lD|,
diF/dt=100A/µs
- 7.6 9.5 ns
- 1.1 1.4 nC
2002-08-26Page 3
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