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BGA614
Silicon Germanium
Data sheet, BGA614, Nov. 2003
Broadband MMIC Amplifier
MMIC
Secure Mobile Solutions
Silicon Discretes
Never stop thinking.
Edition 2003-11-04
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2003.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BGA614
Data sheet
Revision History: 2003-11-04
Previous Version: 2002-05-27
Page Subjects (major changes since last revision)
Preliminary status removed
For questions on technology, delivery and prices please contact the Infineon
Technologies Offices in Germany or the Infineon Technologies Companies and
Representatives worldwide: see our webpage at http://www.infineon.com
Silicon Germanium
Broadband MMIC Amplifier
Features
• Cascadable 50Ω-gain block
• 3 dB-bandwidth: DC to 2.4 GHz with
18.5 dB typical gain at 1.0 GHz
• Compression point P
• Noise figure F
50Ω
• Absolute stable
•70 GHz fT - Silicon Germanium technology
Applications
• Driver amplifier for GSM/PCS/CDMA/UMTS
• Broadband amplifier for SAT-TV & LNBs
• Broadband amplifier for CATV
IN, 1
= 12 dBm at 2.0 GHz
-1dB
= 2.30 dB at 2.0 GHz
Out, 3
BGA614
3
4
2
VPS05605
1
Description
The BGA614 is a broadband matched,
general purpose MMIC amplifier in a
Darlington configuration. It is optimized
for a typical supply current of 40mA.
The BGA614 is based on Infineon
Technologies’ B7HF Silicon Germanium
technology.
GND, 2,4
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Package Marking Chip
BGA614 SOT343 BOs T0565
Data sheet 4 2003-11-04
BGA614
Maximum Ratings
Parameter Symbol Value Unit
Device voltage V
Device current I
Current into pin In I
Input power
Total power dissipation, T
1)
< 102°C
S
2)
P
P
Junction temperature T
Ambient temperature range T
Storage temperature range T
Thermal resistance: junction-soldering point R
Notes:
All Voltages refer to GND-Node
1)
Valid for ZS=ZL=50Ω, VCC=5V, R
2)
TS is measured on the ground lead at the soldering point
Bias
=62Ω
D
D
In
IN
tot
j
A
STG
th JS
3V
80 mA
0.7 mA
10 dBm
240 mW
150 °C
-65 ... +150 °C
-65 ... +150 °C
200 K/W
Electrical Characteristics at TA=25°C (measured in test circuit specified in fig. 1)
VCC=5V, R
=62Ω, Frequency=2GHz, unless otherwise specified
Bias
Parameter Symbol min. typ. max. Unit
2
Insertion power gain
f = 0.1GHz
f = 1.0GHz
f = 2.0GHz
Noise Figure (Z
=50Ω)
S
f = 0.1GHz
f = 1.0GHz
f = 2.0GHz
Output Power at 1dB Gain Compression P
Output Third Order Intercept Point OIP
Input Return Loss RL
Output Return Loss RL
Total Device Current I
Data sheet 5 2003-11-04
|S
|
21
F
50Ω
-1dB
In
Out
D
-
19.5
-
18.5
-
17.0
-
1.95
-
2.20
-
2.30
-12-dBm
-25-dBm
3
-19-dB
-24-dB
-40-mA
dB
-
-
-
dB
-
-
-
BGA614
Data sheet
VCC= 5V
In
Bias-T
Fig.1: Test Circuit for Electrical Characteristics and S-Parameters
Reference Plane
R
= 62
Ω
I
D
Bias-T
Bias I D
Bias
at Pin Out!
D
Out
In
Top View
GND
OutGND
V
D
Caution:
Device Voltage V
V
Reference Plane
= VCC - R
D
S-Parameter VCC=5V, R
=62Ω (see Electrical Characteristics for conditions)
Bias
Frequency S11 S11 S21 S21 S12 S12 S22 S22
[GHz] Mag Ang Mag Ang Mag Ang Mag Ang
0.1 0.1245 5.9 9.3122 177.5 0.0840 0.0 0.1288 -0.9
0.2 0.0854 4.6 9.3767 172.8 0.0825 1.5 0.1266 -4.8
0.4 0.1133 11.1 9.1886 165.1 0.0832 2.7 0.1268 -10.0
0.6 0.1115 7.8 9.0552 157.9 0.0837 4.7 0.1220 -16.9
0.8 0.1114 8.5 8.7953 150.8 0.0834 6.6 0.1146 -23.1
1.0 0.1205 9.8 8.5065 144.1 0.0848 8.4 0.1049 -30.4
1.2 0.1165 8.9 8.0863 137.8 0.0857 9.9 0.0948 -37.5
1.4 0.1163 8.4 7.8100 131.1 0.0883 11.4 0.0869 -45.4
1.6 0.1159 6.7 7.4972 125.6 0.0899 13.0 0.0779 -54.7
1.8 0.1164 5.7 7.2744 120.0 0.0923 13.7 0.0706 -65.1
2.0 0.1099 1.0 6.9831 114.8 0.0944 15.1 0.0642 -75.7
3.0 0.0775 -5.3 5.7650 91.5 0.1114 17.9 0.0623 -159.0
4.0 0.0358 31.2 4.7962 71.7 0.1316 17.2 0.1391 163.7
5.0 0.0719 116.9 4.0808 53.3 0.1541 13.3 0.2209 144.4
6.0 0.1365 123.3 3.5461 36.1 0.1759 7.6 0.2793 126.3
7.0 0.1807 111.4 3.0857 20.8 0.1971 1.0 0.3398 113.0
8.0 0.2628 101.8 2.7951 4.4 0.2197 -7.7 0.4199 103.4
Data sheet 6 2003-11-04
BGA614
Data sheet
Power Gain |S21|2, Gma = f(f)
V
= 5V, R
CC
20
18
16
14
12
[dB]
ma
10
, G
2
|
21
8
|S
6
4
2
0
10
−1
= 62Ω, I C = 40mA
Bias
G
ma
2
|S21|
0
10
Frequency [GHz]
Power Gain |S21| = f(ID)
f = parameter in GHz
20
18
16
14
12
[dB]
2
10
|
21
|S
8
6
4
2
0
0 20 40 60 80
ID [mA]
Matching |S11|, |S22| = f(f)
V
= 5V, R
CC
0
−5
−10
| [dB]
22
−15
S
|, |S
22
11
|S
−20
S
11
−25
1
10
−30
−1
10
= 62Ω, I C = 40mA
Bias
0
10
1
10
Frequency [GHz]
Output Compression Point
P
= f(ID), f = 2GHz
−1dB
20
1
2
3
4
6
8
18
16
14
12
10
[dBm]
−1dB
P
8
6
4
2
0
0 20 40 60 80
ID [mA]
Data sheet 7 2003-11-04
BGA614
Data sheet
Device Current I D = f(VCC)
R
= parameter in Ω
Bias
80
70
60
50
40
[mA]
D
I
30
20
10
0
0 1 2 3 4 5 6
01627 47
VCC [V]
Noise figure F = f(f)
V
= 5V, R
CC
T
= parameter in °C
A
3
2.5
2
1.5
F [dB]
1
= 62Ω, ZS = 50Ω
Bias
+80°C
+25°C
−20°C
100
150
Device Current I D = f(TA)
V
= 5V,R
CC
50
48
46
68
44
42
40
[mA]
D
I
38
36
34
32
30
−20 0 20 40 60 80
= parameter in Ω
Bias
TA [°C]
56
62
68
Package Outline
±0.1
±0.1
2.1
0.20
0.9
0.1 max
0.15
M
A
+0.1
-0.05
GPS05605
A
±0.1
1.25
±0.2
2
±0.1
1.3
12
+0.1
0.3
34
0.6
B
acc. to
DIN 6784
+0.1
0.20MB
+0.2
0.5
0
0 0.5 1 1.5 2 2.5 3
Frequency [GHz]
Data sheet 8 2003-11-04
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