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HiRel NPN Silicon RF Transistor
•
HiRel Discrete and Microwave Semiconductor
• For High Gain Low Noise Amplifiers
• For Oscillators up to 10 GHz
• Noise Figure F = 1.1 dB at 1.8 GHz
Outstanding Gms = 21dB at 1.8 GHz
• Hermetically sealed microwave package
BFY420
34
12
• Transition Frequency f
= 22 GHz
T
• SIEGET 25-Line
Infineon Technologies Grounded Emitter Transistor-
25 GHz fT-Line
Space Qualified
ESA/SCC Detail Spec. No.: 5611/008
Type Variant No. 02
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type Marking Ordering Code Pin Configuration
1 2 3 4
BFY420 (ql) - see below C E B E Micro-X
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1662
H: High Rel Quality, Ordering Code: on request
Package
S: Space Quality, Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q62702F1709
(see order instructions for or der ing example)
Semiconductor Group 1 of 5 Draft B, September 99
BFY420
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Base current I
Total power dissipation,
≤ 129°C
T
S
1), 2)
Junction temperature T
Operating temperatur e r ange T
Storage temperature r ange T
CEO
CBO
EBO
C
B
P
tot
j
op
stg
4.5 V
15 V
1.5 V
35 mA
3.0 mA
160 mW
175
-65...+175
-65...+175
Thermal Resistance
Junction-soldering point
2)
R
th JS
< 285
Notes.:
1) At TS = + 129 °C. For TS > + 129 °C derating is required.
is measured on the collector lead at the soldering point to the pcb.
2) T
S
°C
°C
°C
K/W
Electrical Characteristics
=25°C; unless otherwise specified
at T
A
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-base cutoff cur rent
= 5 V, IE = 0
V
CB
Collector-emitter cutoff current
VCE = 4.5 V, IB = 1.0µA
Emitter-base cuttof f current
= 1.5 V, IC = 0
V
EB
DC current gain
= 5 mA, VCE = 1 V
I
C
1.)
I
CBO
I
CEX
I
EBO
h
FE
- - 30 nA
- - 200
µA
(t.b.d.)
--20
µA
50 90 150 -
Notes:
1.) This Test assures V(BR)CE0 > 4.5V
Semiconductor Group 2 of 5 Draft B, September 99