INFINEON BFT92 User Manual

PNP Silicon RF Transistor

j

A

g

• For broadband amplifiers up to 2 GHz

BFT92

at collector currents up to 30 mA

• Complementary type: BFR92P (NPN)

3

2

1

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type Marking Pin Configuration Package

BFT92 W1s

1 = B 2 = E 3 = C

SOT23

Maximum Ratings
Parameter Symbol Value Unit

Collector-emitter voltage V
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Base current I
Total power dissipation1)

T

≤ 78°C

S

P

Junction temperature T

CEO
CES
CBO

EBO
C
B

tot

15 V
20
20

2

45 mA

5

200 mW

150 °C
Ambient temperature T
Storage temperature T

st

-65 ... 150

-65 ... 150

Thermal Resistance
Parameter Symbol Value Unit

Junction - soldering point

1

TS is measured on the collector lead at the soldering point to the pcb

2

For calculation of R

thJA

2)

please refer to Application Note Thermal Resistance

R

thJS

1

≤ 360

K/W

2005-10-13

Electrical Characteristics at TA = 25°C, unless otherwise specified

BFT92

Parameter

DC Characteristics

Collector-emitter breakdown voltage

= 1 mA, IB = 0

I

C

Collector-emitter cutoff current

= 20 V, VBE = 0

V

CE

Collector-base cutoff current

= 10 V, IE = 0

V

CB

Emitter-base cutoff current

= 1 V, IC = 0

V

EB

DC current gain-

= 15 mA, VCE = 8 V, pulse measured

I

C

Symbol Values Unit

min. typ. max.

V

(BR)CEO

I

CES

I

CBO

I

EBO

h

FE

15 - - V

- - 100 µA

- - 100 nA

- - 1 µA

20 40 70 -

2

2005-10-13

BFT92

Electrical Characteristics at T

= 25°C, unless otherwise specified

Parameter

AC Characteristics (verified by random sampling)

Transition frequency

= 15 mA, VCE = 8 V, f = 500 MHz

I

C

Collector-base capacitance

= 10 V, f = 1 MHz, VBE = 0 ,

V

CB

emitter grounded
Collector emitter capacitance

= 10 V, f = 1 MHz, VBE = 0 ,

V

CE

base grounded
Emitter-base capacitance

= 0.5 V, f = 1 MHz, VCB = 0 ,

V

EB

collector grounded
Noise figure

Symbol Values Unit

min. typ. max.

f

T

C

cb

C

ce

C

eb

F

3.5 5 - GHz

- 0.56 0.9 pF

- 0.35 -

- 0.7 -

dB

= 2 mA, VCE = 8 V, ZS = Z

I

C

Sopt

,

f = 900 MHz

= 2 mA, VCE = 8 V, ZS = Z

I

C

Sopt

,

f = 1.8 GHz
Power gain, maximum available1)

= 15 mA, VCE = 8 V, ZS = Z

I

C

= Z

Z

L

= 15 mA, VCE = 8 V, ZS = Z

I

C

= Z

Z

L

, f = 900 MHz

Lopt

, f = 1.8 GHz

Lopt

Sopt

Sopt

,

,

Transducer gain

= 15 mA, VCE = 8 V, ZS = ZL = 50Ω ,

I

C

f = 900 MHz

= 15 mA, VCE = 8 V, ZS = ZL = 50Ω ,

I

C

f = 1.8 GHz

1

Gma = |S21 / S12| (k-(k²-1)

1/2)

G

|S

ma

21e

-

-

-

-

2

|

-

-

2

3

13.5

8

11.5

6

-

-

-

­dB

-

-

3

2005-10-13