Infineon BFS480 Schematic [ru]
NPN Silicon RF Transistor
m
g
For low noise, low-power amplifiersin mobile
communication systems (pager, cordless
telephone) at collector currents from 0.2 mA to 8
fT = 7 GHz
F = 1.5 dB at 900 MHz
Two (galvanic) internal isolated
Transistors in one package
C1 E2 B2
6 54
TR1
TR2
321
C2E1B1
EHA07196
BFS 480
4
5
6
3
2
1
VPS05604
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFS 480 REs 1=B 2=E 3=C 4=B 5=E 6=C SOT-363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS 112 °C
Junction temperature
Ambient temperature
Storage temperature
1)
Symbol Value Unit
V
V
V
V
I
I
P
T
T
T
C
B
CEO
CES
CBO
EBO
tot
j
A
st
8 V
10
10
2
10 mA
1.2
80 mW
150 °C
-65 ... 150
-65 ... 150
Thermal Resistance
Junction - soldering point
1
T
is measured on the collector lead at the soldering point to the pcb
S
R
thJS
470
K/W
1 Oct-12-1999
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BFS 480
Parameter
DC characteristics
Collector-emitter breakdown voltage
= 1 mA, IB = 0
I
C
Collector-emitter cutoff current
V
= 10 V, VBE = 0
CE
Collector-base cutoff current
V
= 8 V, IE = 0
CB
Emitter-base cutoff current
= 1 V, IC = 0
V
EB
DC current gain
= 3 mA, VCE = 5 V
I
C
Symbol Values Unit
min. typ. max.
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
8 - - V
- - 100 µA
- - 100 nA
- - 1 µA
30 100 200 -
2 Oct-12-1999
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