NPN Silicon RF Transistor
m
g
For low noise, low-power amplifiersin mobile
communication systems (pager, cordless
telephone) at collector currents from 0.2 mA to 8
fT = 7 GHz
F = 1.5 dB at 900 MHz
Two (galvanic) internal isolated
Transistors in one package
C1 E2 B2
6 54
TR1
TR2
321
C2E1B1
EHA07196
BFS 480
4
5
6
3
2
1
VPS05604
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFS 480 REs 1=B 2=E 3=C 4=B 5=E 6=C SOT-363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS 112 °C
Junction temperature
Ambient temperature
Storage temperature
1)
Symbol Value Unit
V
V
V
V
I
I
P
T
T
T
C
B
CEO
CES
CBO
EBO
tot
j
A
st
8 V
10
10
2
10 mA
1.2
80 mW
150 °C
-65 ... 150
-65 ... 150
Thermal Resistance
Junction - soldering point
1
T
is measured on the collector lead at the soldering point to the pcb
S
R
thJS
470
K/W
1 Oct-12-1999
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BFS 480
Parameter
DC characteristics
Collector-emitter breakdown voltage
= 1 mA, IB = 0
I
C
Collector-emitter cutoff current
V
= 10 V, VBE = 0
CE
Collector-base cutoff current
V
= 8 V, IE = 0
CB
Emitter-base cutoff current
= 1 V, IC = 0
V
EB
DC current gain
= 3 mA, VCE = 5 V
I
C
Symbol Values Unit
min. typ. max.
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
8 - - V
- - 100 µA
- - 100 nA
- - 1 µA
30 100 200 -
2 Oct-12-1999
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BFS 480
Parameter
AC characteristics (verified by random sampling)
Transition frequency
= 6 mA, VCE = 5 V, f = 500 MHz
I
C
Collector-base capacitance
= 5 V, f = 1 MHz
V
CB
Collector-emitter capacitance
= 5 V, f = 1 MHz
V
CE
Emitter-base capacitance
= 0.5 V, f = 1 MHz
V
EB
Noise figure
= 1.5 mA, VCE = 5 V, ZS = Z
I
C
Sopt
,
f = 900 MHz
f = 1.8 GHz
Symbol Values Unit
min. typ. max.
f
C
C
C
F
T
cb
ce
eb
5 7.5 - GHz
- 0.23 0.4 pF
- 0.1 -
- 0.23 -
-
-
1.5
2
dB
-
-
Power gain, maximum stable F)
= 3 mA, VCE = 5 V, ZS = Z
I
C
Sopt
, ZL = Z
f = 900 MHz
f = 1.8 GHz
Transducer gain
= 3 mA, VCE = 5 V, ZS = ZL = 50 ,
I
C
f = 900 MHz
f = 1.8 GHz
Lopt
,
G
|S
ms
21e
-
-
2
|
-
-
18
14
14
9.5
-
-
-
-
1
G
= |S21 / S12|
ms
3 Oct-12-1999
BFS 480
Total power dissipation P
* Package mounted on epoxy
100
mW
80
70
tot
P
60
50
40
30
20
10
0
0 20 40 60 80 100 120
= f (TA*, TS)
tot
T
T
A
S
°C
TA,T
150
S
Permissible Pulse Load R
3
10
K/W
thJS
R
2
10
1
10
-7
-6
-5
10
10
10
10
-4
10
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
-3
= f (tp)
-2
10
s
tp
10
Permissible Pulse Load
P
totmax/PtotDC
2
10
totDC
-
/ P
totmax
P
1
10
0
0
10
10
-7
10
= f (tp)
-6
-5
10
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-4
-3
10
10
-2
s
10
0
tp
4 Oct-12-1999
BFS 480
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0.40
pF
0.30
cb
0.25
C
0.20
0.15
0.10
0.05
0.00
0 2 4 6 8
V
12
VCB
Transition frequency fT = f (IC)
VCE = Parameter
10
GHz
8
7
T
f
6
5
4
3
2
1
0 2 4 6 8
10V
5V
3V
2V
1V
0.7V
mA
12
IC
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
= Parameter
V
CE
22
dB
18
G
16
14
12
10
8
0 2 4 6 8
8V
2V
1V
0.7V
mA
IC
12
Power Gain Gma, Gms = f(IC)
f = 1.8GHz
= Parameter
V
CE
15
dB
13
12
G
11
10
9
8
7
6
5
0 2 4 6 8
8V
3V
2V
1V
0.7V
mA
12
IC
5 Oct-12-1999
BFS 480
Power Gain Gma, Gms = f(VCE):_____
|S21|2 = f(VCE):---------
f = Parameter
20
IC=3mA
dB
16
14
G
12
10
8
6
4
2
0
0 1 2 3 4 5 6 7 8
0.9GHz
0.9GHz
1.8GHz
1.8GHz
V
VCE
10
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50)
= Parameter, f = 900MHz
V
CE
22
dBm
14
3
10
IP
6
2
-2
-6
-10
-14
0 2 4 6 8
1V
8V
5V
3V
2V
mA
11
IC
Power Gain Gma, Gms = f(f)
V
= Parameter
CE
30
IC=3mA
dB
26
24
22
G
20
18
16
14
12
10
8
6
0.0 0.5 1.0 1.5 2.0 2.5
GHz
8V
1V
0.7V
3.5
Power Gain |S21|2= f(f)
VCE = Parameter
20
IC=3mA
dB
16
14
G
12
10
8
6
4
0.0 0.5 1.0 1.5 2.0 2.5
GHz
8V
1V
0.7V
3.5
f
f
6 Oct-12-1999
Loading...