INFINEON BFS17P User Manual

NPN Silicon RF Transistor

j

A

g

• For broadband amplifiers up to 1 GHz at

BFS17P

collector currents from 1 mA to 20 mA

3

2

1

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type Marking Pin Configuration Package

BFS17P MCs

1 = B 2 = E 3 = C

Maximum Ratings
Parameter Symbol Value Unit

Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Peak collector current I
Total power dissipation1)

T

≤ 55 °C

S

P

Junction temperature T

CEO
CBO

EBO
C
CM

tot

15 V
25

2.5
25 mA
50

280 mW

150 °C

SOT23

Ambient temperature T
Storage temperature T

st

-65 ... 150

-65 ... 150

Thermal Resistance
Parameter Symbol Value Unit

Junction - soldering point

1

TS is measured on the collector lead at the soldering point to the pcb

2

For calculation of R

thJA

2)

please refer to Application Note Thermal Resistance

R

thJS

1

≤ 340

K/W

2005-11-17

Electrical Characteristics at TA = 25°C, unless otherwise specified

BFS17P

Parameter

DC Characteristics

Collector-emitter breakdown voltage

I

= 1 mA, IB = 0

C

Collector-base cutoff current

V

= 10 V, IE = 0

CB

V

= 25 V, IE = 0

CB

Emitter-base cutoff current

V

= 2.5 V, IC = 0

EB

DC current gain-

I

= 2 mA, VCE = 1 V, pulse measured

C

I

= 25 mA, VCE = 1 V, pulse measured

C

Collector-emitter saturation voltage

I

= 10 mA, IB = 1 mA

C

Symbol Values Unit

min. typ. max.

V

(BR)CEO

I

CBO

I

EBO

h

FE

V

CEsat

15 - - V

-

-

-

-

0.05
10

- - 100

40
20

70

-

150

-

- 0.1 0.4 V

µA

-

2

2005-11-17

Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter

Symbol Values Unit

min. typ. max.

AC Characteristics (verified by random sampling)

BFS17P

Transition frequency

I

= 2 mA, VCE = 5 V, f = 200 MHz

C

I

= 25 mA, VCE = 5 V, f = 200 MHz

C

Collector-base capacitance

V

= 5 V, f = 1 MHz, VBE = 0 ,

CB

emitter grounded
Collector emitter capacitance

V

= 5 V, f = 1 MHz, VBE = 0 ,

CE

base grounded
Emitter-base capacitance

V

= 0.5 V, f = 1 MHz, VCB = 0 ,

EB

collector grounded
Noise figure

I

= 2 mA, VCE = 5 V, ZS = 50 Ω,

C

f = 800 MHz

f

C

C

C

F

T

1

1.3

cb

ce

eb

- 0.55 0.8 pF

- 0.27 -

- 0.9 1.45

1.4

2.5

GHz

-

-

- 3.5 5 dB

Transducer gain

I

= 20 mA, VCE = 5 V, ZS = ZL = 50Ω,

C

f = 500 MHz
Third order intercept point at output

V

= 5 V, IC = 20 mA, f = 800 MHz,

CE

Z

S

= Z

Sopt

, ZL = Z

Lopt

1dB Compression point

I

= 20 mA, VCE = 5 V, ZS = ZL = 50Ω,

C

f = 800 MHz

|S

IP

P

21e

3

-1dB

2

|

- 13 - dB

- 21.5 - dBm

- 10 - -

3

2005-11-17