Infineon BFR949T Schematic [ru]

NPN Silicon RF Transistor
Preliminary data

BFR949T



For low noise, high-gain broadband amplifiers at

3

collector currents from 1 mA to 20 mA



fT = 9 GHz

F = 1.0 dB at 1 GHz

1

VPS05996

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type Marking Pin Configuration Package

BFR949T RKs 1 = B 2 = E 3 = C SC75

Maximum Ratings
Parameter Symbol Value Unit

2

Collector-emitter voltage V
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Base current I

Total power dissipation

T

 75°C

S

1)

Junction temperature T
Ambient temperature T
Storage temperature T

Thermal Resistance

Junction - soldering point

1

T

is measured on the collector lead at the soldering point to the pcb

S

2

For calculation of R

thJA

2)

please refer to Application Note Thermal Resistance

C
B

P

R

CEO
CES
CBO
EBO

tot

j
A
stg

thJS

10 V
20
20

1.5
35 mA

4

250 mW

150 °C

-65 ... 150

-65 ... 150



300

K/W

Aug-09-20011

Electrical Characteristics at TA = 25°C, unless otherwise specified

BFR949T

Parameter

DC Characteristics

Collector-emitter breakdown voltage

= 1 mA, IB = 0

I

C

Base-emitter forward voltage

I

= 25mA

E

Collector-base cutoff current

V

= 10 V, IE = 0

CB

Emitter-base cutoff current

= 1 V, IC = 0

V

EB

DC current gain

= 5 mA, VCE = 6 V

I

C

Symbol Values Unit

min. typ. max.

V

(BR)CEO

V

BEF

I

CBO

I

EBO

h

FE

10 - - V

- - 1.05

- - 100 nA

- - 0.1 µA

100 140 200 -

Aug-09-20012

BFR949T

A

Electrical Characteristics at T

= 25°C, unless otherwise specified.

Parameter

AC characteristics (verified by random sampling)

Transition frequency

I

= 15 mA, VCE = 6 V, f = 1 GHz

C

Collector-base capacitance

V

= 10 V, f = 1MHz

CB

Collector-emitter capacitance

V

= 10 V, f = 1MHz

CE

Emitter-base capacitance

V

= 0.5 V, f = 1MHz

EB

Noise figure

I

= 5 mA, VCE = 6 V, ZS = Z

C

Sopt

,

f = 1 GHz

Symbol Values Unit

min. typ. max.

f

T

C

cb

C

ce

C

eb

F

7 9 - GHz

- 0.33 0.4 pF

- 0.2 -

- 0.6 -

-

1

2.5

dB

= 3 mA, VCE = 8 V, ZS = Z

I

C

Sopt

,

f = 1.8 GHz

Power gain, maximum stable 1)

I

= 10 mA, VCE = 8 V, ZS = Z

C

Sopt

, ZL = Z

f = 900 MHz
Power gain, maximum available 2)

I

= 10 mA, VCE = 8 V, ZS = Z

C

Sopt

, ZL = Z

f = 1.8 GHz

Transducer gain

I

= 15 mA, VCE = 6 V, ZS = ZL = 50 ,

C

f = 1 GHz

= 10 mA, VCE = 8 V, ZS = ZL = 50 ,

I

C

f = 1.8 GHz

1

Gms = |S21 / S12|

2

Gma = |S21 / S12| (k-(k2-1)

1/2

)

Lopt

Lopt

,

,

G

G

|S

ms

ma

21e

-

1.5

-

- 20 -

- 14 -

2

|

13

-

16
11

-

-

Aug-09-20013