NPN Silicon Digital Transistor
g
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R1=4.7k, R2=4.7k)
BCR512
3
C
3
R
1
R
2
21
EB
EHA07184
1
Type Marking Pin Configuration Package
BCR512 XFs 1 = B 2 = E 3 = C SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage 10
Input on Voltage
DC collector current
Total power dissipation, TS = 79 °C P
Junction temperature
Symbol Value Unit
V
CEO
V
V
V
I
T
T
C
CBO
EBO
i(on)
tot
j
st
50
30
500 mA
150 °C
-65 ... 150Storage temperature
2
VPS05161
V50
mW330
Thermal Resistance
Junction - soldering point
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
1)
R
thJS
215 K/W
Dec-13-20011
BCR512
A
Electrical Characteristics at T
=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 100 µA, IB = 0
C
Collector-base breakdown voltage
I
= 10 µA, IE = 0
C
Collector cutoff current
V
= 40 V, IE = 0
CB
Emitter cutoff current
V
= 10 V, IC = 0
EB
DC current gain 1)
I
= 50 mA, VCE = 5 V
C
Collector-emitter saturation voltage1)
I
= 50 mA, IB = 2.5 mA
C
V
(BR)CEO
V
(BR)CBO
I
CBO
I
EBO
h
FE
V
CEsat
50 - - V
50 - -
- - 100 nA
- - 1.61 mA
60 - - -
- - 0.3 V
Input off voltage
I
= 100 µA, VCE = 5 V
C
Input on Voltage
I
= 10 mA, VCE = 0.3 V
C
Input resistor
Resistor ratio
AC Characteristics
I
= 50 mA, VCE = 5 V, f = 100 MHz
C
V
i(off)
V
i(on)
R
1
R1/R
f
T
0.6 - 1.5
1 - 2.2
3.2 4.7 6.2
2
0.9 1 1.1 -
k
- - MHz100Transition frequency
1) Pulse test: t < 300s; D < 2%
Dec-13-20012
BCR512
DC Current Gain h
= 5V (common emitter configuration)
V
CE
= f (IC)
FE
3
10
-
2
10
FE
h
1
10
0
10
-1
10
10
-1
10
0
10
1
10
Collector-Emitter Saturation Voltage
V
= f (IC), hFE = 20
CEsat
3
10
mA
2
10
C
I
1
10
0
2
mA
10
3
IC
10
0.0 0.2 0.4 0.6
V
V
1.0
CEsat
Input on Voltage V
= 0.3V (common emitter configuration)
V
CE
i(on)
= f (IC)
3
10
mA
2
10
C
I
1
10
0
10
-1
10
10
-1
10
0
10
1
Input off voltage V
= 5V (common emitter configuration)
V
CE
i(off)
= f (IC)
1
10
mA
0
10
C
I
-1
10
-2
10
0.0 0.5 1.0
V
V
2.0
i(off)
i(on)
10
2
V
V
Dec-13-20013
BCR512
Total power dissipation P
400
mW
300
tot
250
P
200
150
100
50
= f (TS)
tot
0
0 20 40 60 80 100 120
Permissible Pulse Load R
3
10
K/W
2
10
thJS
R
1
10
0
10
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
°C
T
= f (tp)
150
S
Permissible Pulse Load
P
totmax
/ P
totDC
= f (tp)
4
10
-
totDC
3
/ P
10
D = 0
totmax
P
10
10
2
1
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
-1
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10
-6
tp
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
Dec-13-20014
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