Infineon BCR512 Schematic [ru]

NPN Silicon Digital Transistor

g



Switching circuit, inverter, interface circuit,

driver circuit



Built in bias resistor (R1=4.7k, R2=4.7k)

BCR512

3

C

3

R

1

R

2

21

EB

EHA07184

1

Type Marking Pin Configuration Package

BCR512 XFs 1 = B 2 = E 3 = C SOT23

Maximum Ratings

Parameter

Collector-emitter voltage
Collector-base voltage
Emitter-base voltage 10
Input on Voltage
DC collector current
Total power dissipation, TS = 79 °C P

Junction temperature

Symbol Value Unit

V

CEO

V
V
V
I

T
T

C

CBO

EBO

i(on)

tot

j

st

50

30

500 mA

150 °C

-65 ... 150Storage temperature

2

VPS05161

V50

mW330

Thermal Resistance

Junction - soldering point

1

For calculation of R

please refer to Application Note Thermal Resistance

thJA

1)

R

thJS



215 K/W

Dec-13-20011

BCR512

A

Electrical Characteristics at T

=25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

= 100 µA, IB = 0

C

Collector-base breakdown voltage

I

= 10 µA, IE = 0

C

Collector cutoff current

V

= 40 V, IE = 0

CB

Emitter cutoff current

V

= 10 V, IC = 0

EB

DC current gain 1)

I

= 50 mA, VCE = 5 V

C

Collector-emitter saturation voltage1)

I

= 50 mA, IB = 2.5 mA

C

V

(BR)CEO

V

(BR)CBO

I

CBO

I

EBO

h

FE

V

CEsat

50 - - V

50 - -

- - 100 nA

- - 1.61 mA

60 - - -

- - 0.3 V

Input off voltage

I

= 100 µA, VCE = 5 V

C

Input on Voltage

I

= 10 mA, VCE = 0.3 V

C

Input resistor
Resistor ratio

AC Characteristics

I

= 50 mA, VCE = 5 V, f = 100 MHz

C

V

i(off)

V

i(on)

R

1

R1/R

f

T

0.6 - 1.5

1 - 2.2

3.2 4.7 6.2

2

0.9 1 1.1 -

k



- - MHz100Transition frequency

1) Pulse test: t < 300s; D < 2%

Dec-13-20012