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查询BCR164供应商
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
BCR164...
• Built in bias resistor (R
= 4.7kΩ , R2 = 10kΩ )
1
BCR164F/L3
BCR164T
C
3
R
1
R
2
21
EB
EHA07183
Type Marking Pin Configuration Package
BCR164F*
U6s
1=B
2=E
3=C
-
-
-
TSFP-3
BCR164L3*
BCR164T*
U6
U6s
1=B
1=B
2=E
2=E
3=C
3=C
* Preliminary
Maximum Ratings
Parameter
Symbol Value Unit
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Input on voltage V
Collector current I
Total power dissipation-
BCR164F, T
BCR164L3, T
BCR164T, T
≤ 128°C
S
≤ 135°C
S
≤ 109°C
S
P
Junction temperature T
-
-
CEO
CBO
EBO
i(on)
C
tot
j
-
-
-
-
TSLP-3-4
SC75
50 V
50
5
15
100 mA
mW
250
250
250
150 °C
Storage temperature T
st
1
-65 ... 150
Sep-03-2003
Thermal Resistance
Parameter
BCR164...
Symbol Value Unit
Junction - soldering point1)
BCR164F
BCR164L3
BCR164T
Electrical Characteristics at T
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
= 100 µA, IB = 0
C
Collector-base breakdown voltage
I
= 10 µA, IE = 0
C
Collector-base cutoff current
V
= 40 V, IE = 0
CB
Emitter-base cutoff current
V
= 10 V, IC = 0
EB
DC current gain2)
I
= 5 mA, VCE = 5 V
C
R
thJS
-
≤ 90
≤ 60
≤ 165
Symbol Values Unit
min. typ. max.
V
(BR)CEO
V
(BR)CBO
I
CBO
I
EBO
h
FE
50 - -
50 - -
- - 100 nA
- - 520 µA
30 - - -
V
Collector-emitter saturation voltage2)
I
= 10 mA, IB = 0.5 mA
C
Input off voltage
I
= 100 µA, VCE = 5 V
C
Input on voltage
I
= 2 mA, VCE = 0.3 V
C
Input resistor R
V
CEsat
V
i(off)
V
i(on)
1
Resistor ratio R1/R
AC Characteristics
Transition frequency
= 10 mA, VCE = 5 V, f = 100 MHz
I
C
Collector-base capacitance
= 10 V, f = 1 MHz
V
CB
1
For calculation of
2
Pulse test: t < 300µs; D < 2%
R
please refer to Application Note Thermal Resistance
thJA
f
C
T
cb
- - 0.3 V
0.5 - 1.1
0.5 - 1.4
3.2 4.7 6.2 kΩ
2
0.42 0.47 0.52 -
- 160 - MHz
- 3 - pF
2
Sep-03-2003
BCR164...
DC current gain h
= 5 V (common emitter configuration)
V
CE
3
10
2
10
FE
h
1
10
0
10
-4
10
FE
10
= ƒ(I
-3
)
C
-2
10
Collector-emitter saturation voltage
V
A
I
-1
10
C
= ƒ(I
CEsat
-1
10
A
C
I
-2
10
-3
10
0 0.1 0.2 0.3
), hFE = 20
C
V
V
CEsat
0.5
Input on Voltage Vi
= 0.3V (common emitter configuration)
V
CE
-1
10
A
-2
10
C
I
-3
10
-4
10
-1
10
10
(on)
0
= ƒ(I
C
10
)
1
Input off voltage V
= 5V (common emitter configuration)
V
CE
-2
10
A
-3
10
C
I
-4
10
-5
10
-6
10
0 0.5 1
i(on)
10
2
V
V
i(off)
= ƒ(I
)
C
V
V
2
i(off)
3
Sep-03-2003
BCR164...
Total power dissipation P
BCR164F
300
mW
200
tot
P
150
100
50
0
0 20 40 60 80 100 120
= ƒ(T
tot
)
S
Total power dissipation P
= ƒ(T
tot
)
S
BCR164L3
300
mW
200
tot
P
150
100
50
°C
T
150
S
0
0 20 40 60 80 100 120
°C
T
150
S
Total power dissipation P
BCR164T
300
mW
200
tot
P
150
100
50
0
0 20 40 60 80 100 120
= ƒ(T
tot
)
S
Permissible Puls Load R
thJS
= ƒ (t
)
p
BCR164F
2
10
K/W
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
-4
10
-3
10
-2
s
t
0
10
p
°C
T
1
10
thJS
R
0
10
-1
10
150
S
10
-6
10
-5
10
4
Sep-03-2003
BCR164...
Permissible Pulse Load
P
totmax/PtotDC
= ƒ(t
)
p
BCR164F
3
10
totDC
/P
10
totmax
P
10
10
2
1
0
10
-6
10
-5
10
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-4
10
Permissible Puls Load R
thJS
= ƒ (t
)
p
BCR164L3
2
10
1
10
thJS
R
0.5
0.2
0.1
10
0.05
0.02
0.01
0.005
D = 0
-3
10
-2
t
0
s
10
p
0
10
-1
-3
10
-2
s
t
0
10
p
10
10
-7
-6
-5
10
10
10
-4
Permissible Pulse Load
P
totmax/PtotDC
= ƒ(t
)
p
BCR164L3
3
10
totDC
/ P
2
10
totmax
P
1
10
0
10
-7
-6
-5
10
10
10
10
-4
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-3
10
Permissible Puls Load R
thJS
= ƒ (t
)
p
BCR164T
3
10
K/W
2
10
thJS
R
1
10
D=0.5
0.2
0.1
0.05
10
0.02
0.01
0.005
0
-4
10
-3
10
-2
s
t
0
10
p
0
10
-1
-2
s
t
0
10
p
10
10
-6
10
-5
5
Sep-03-2003
Permissible Pulse Load
BCR164...
P
totmax/PtotDC
BCR164T
3
10
totDC
/ P
2
10
totmax
P
1
10
0
10
-6
10
= ƒ(t
-5
10
10
)
p
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-4
10
-3
10
-2
s
t
0
10
p
6
Sep-03-2003
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