INFINEON BCR164F, BCR164L3, BCR164T User Manual
g
查询BCR164供应商
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
BCR164...
• Built in bias resistor (R
= 4.7kΩ , R2 = 10kΩ )
1
BCR164F/L3
BCR164T
C
3
R
1
R
2
21
EB
EHA07183
Type Marking Pin Configuration Package
BCR164F*
U6s
1=B
2=E
3=C
-
-
-
TSFP-3
BCR164L3*
BCR164T*
U6
U6s
1=B
1=B
2=E
2=E
3=C
3=C
* Preliminary
Maximum Ratings
Parameter
Symbol Value Unit
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Input on voltage V
Collector current I
Total power dissipation-
BCR164F, T
BCR164L3, T
BCR164T, T
≤ 128°C
S
≤ 135°C
S
≤ 109°C
S
P
Junction temperature T
-
-
CEO
CBO
EBO
i(on)
C
tot
j
-
-
-
-
TSLP-3-4
SC75
50 V
50
5
15
100 mA
mW
250
250
250
150 °C
Storage temperature T
st
1
-65 ... 150
Sep-03-2003
Thermal Resistance
Parameter
BCR164...
Symbol Value Unit
Junction - soldering point1)
BCR164F
BCR164L3
BCR164T
Electrical Characteristics at T
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
= 100 µA, IB = 0
C
Collector-base breakdown voltage
I
= 10 µA, IE = 0
C
Collector-base cutoff current
V
= 40 V, IE = 0
CB
Emitter-base cutoff current
V
= 10 V, IC = 0
EB
DC current gain2)
I
= 5 mA, VCE = 5 V
C
R
thJS
-
≤ 90
≤ 60
≤ 165
Symbol Values Unit
min. typ. max.
V
(BR)CEO
V
(BR)CBO
I
CBO
I
EBO
h
FE
50 - -
50 - -
- - 100 nA
- - 520 µA
30 - - -
V
Collector-emitter saturation voltage2)
I
= 10 mA, IB = 0.5 mA
C
Input off voltage
I
= 100 µA, VCE = 5 V
C
Input on voltage
I
= 2 mA, VCE = 0.3 V
C
Input resistor R
V
CEsat
V
i(off)
V
i(on)
1
Resistor ratio R1/R
AC Characteristics
Transition frequency
= 10 mA, VCE = 5 V, f = 100 MHz
I
C
Collector-base capacitance
= 10 V, f = 1 MHz
V
CB
1
For calculation of
2
Pulse test: t < 300µs; D < 2%
R
please refer to Application Note Thermal Resistance
thJA
f
C
T
cb
- - 0.3 V
0.5 - 1.1
0.5 - 1.4
3.2 4.7 6.2 kΩ
2
0.42 0.47 0.52 -
- 160 - MHz
- 3 - pF
2
Sep-03-2003
Loading...