INFINEON BC856BW, BC857AW, BC857BW, BC857CW, BC858BW User Manual
...
PNP Silicon AF Transistors
BC856W...BC860W
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Low noise between 30 Hz and 15 kHz
• Complementary types:
BC846W, BC847W, BC848W
BC849W, BC850W (NPN)
Type Marking Pin Configuration Package
BC856BW
BC857AW
BC857BW
3Bs
3Es
3Fs
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
3
3 = C
3 = C
3 = C
1
VSO05561
SOT323
SOT323
SOT323
2
BC857CW
BC858BW
BC858CW
BC859AW
BC860BW
BC860CW
3Gs
3Ks
3Ls
4As
4Fs
4Gs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
1 Jan-28-2005
Package Outline
Foot Print
±0.2
2
+0.1
0.3
-0.05
12
3x
M
0.1
3
0.650.65
acc. to
DIN 6784
0.6
+0.2
0.1 MAX.
±0.1
2.1
0.2 A
0.1
0.1 MIN.
M
0.9
±0.1
0.15
+0.1
-0.05
Package SOT323
A
±0.1
1.25
0.8
0.65
Marking Layout
Manufacturer
Pin 1
Type code BCR108W
Packing
Code E6327: Reel ø180 mm = 3.000 Pieces/Reel
Code E6433: Reel ø330 mm = 10.000 Pieces/Reel
1.6
0.65
Example
Pin 1
2.15
4
8
2.3
0.2
1.1
Maximum Ratings
g
BC856W...BC860W
Parameter
Symbol BC856W BC857W
Collector-emitter voltage V
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
DC collector current I
Peak collector current I
Peak base current I
Peak emitter current I
Total power dissipation, TS = 124 °C
P
Junction temperature T
Storage temperature T
Thermal Resistance
Junction - soldering point
1)
C
CM
BM
EM
j
st
R
CEO
CBO
CES
EBO
tot
thJS
BC858W
BC860W
BC859W
65 45 30
80 50 30
80 50 30
5 5 5
100 mA
200 mA
200
200
250 mW
150 °C
-65 ... 150
≤105 K/W
Unit
V
Electrical Characteristics at T
= 25°C, unless otherwise specified.
A
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 10 mA, IB = 0
C
Collector-base breakdown voltage
I
= 10 µA, IE = 0
C
1
For calculation of
R
please refer to Application Note Thermal Resistance
thJA
BC856W
BC857/860W
BC858/859W
BC856W
BC857/860W
BC858/859W
V
(BR)CEO
V
(BR)CBO
65
45
30
80
50
30
-
-
-
-
-
-
V
-
-
-
-
-
-
2 Jan-28-2005
BC856W...BC860W
Electrical Characteristics at T
= 25°C, unless otherwise specified.
A
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 10 µA, VBE = 0
C
Emitter-base breakdown voltage
I
= 1 µA, IC = 0
E
Collector cutoff current
V
= 30 V, IE = 0
CB
Collector cutoff current
V
= 30 V, IE = 0 , TA = 150 °C
CB
DC current gain 1)
BC856W
BC857/860W
BC858/859W
V
(BR)CES
V
(BR)EBO
I
CBO
I
CBO
h
FE
80
50
30
-
-
-
5 - -
- - 15 nA
- - 5 µA
V
-
-
-
-
I
= 10 µA, VCE = 5 V
C
DC current gain 1)
I
= 2 mA, VCE = 5 V
C
Collector-emitter saturation voltage1)
I
= 10 mA, IB = 0.5 mA
C
I
= 100 mA, IB = 5 mA
C
Base-emitter saturation voltage 1)
I
= 10 mA, IB = 0.5 mA
C
I
= 100 mA, IB = 5 mA
C
Base-emitter voltage 1)
I
= 2 mA, VCE = 5 V
C
I
= 10 mA, VCE = 5 V
C
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
-group A
-group B
-group C
-group A
-group B
-group C
h
FE
V
CEsat
V
BEsat
V
BE(ON)
-
-
-
125
220
420
-
-
-
-
600
-
140
250
480
180
290
520
75
250
700
850
650
-
-
-
-
250
475
800
300
650
-
-
750
820
mV
1) Pulse test: t ≤ 300µs, D = 2%
3 Jan-28-2005
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