NPN Silicon AF Transistors
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Low noise between 30 Hz and 15 kHz
• Complementary types:
BC857...-BC860...(PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
1
BC847BL3 is not qualified according AEC Q101
1)
BC847...-BC850...
Type Marking Pin Configuration Package
BC847A
BC847B
BC847BL3*
BC847BW
BC847C
BC847CW
BC848A
BC848B
BC848BL3
BC848BW
BC848C
BC848CW
BC849B
BC849C
BC849CW
1Es
1Fs
1F
1Fs
1Gs
1Gs
1Js
1Ks
1K
1Ks
1Ls
1Ls
2Bs
2Cs
2Cs
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SOT23
SOT23
TSLP-3-1
SOT323
SOT23
SOT323
SOT23
SOT23
TSLP-3-1
SOT323
SOT23
SOT323
SOT23
SOT23
SOT323
BC850B
BC850BW
BC850C
BC850CW
2Fs
2Fs
2Gs
2Gs
* Not qualified according AEC Q101
1=B
1=B
1=B
1=B
2=E
2=E
2=E
2=E
1
3=C
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
-
-
-
SOT23
SOT323
SOT23
SOT323
2011-09-09
Maximum Ratings
g
BC847...-BC850...
Parameter
Collector-emitter voltage
BC847..., BC850...
BC848..., BC849...
Collector-emitter voltage
BC847..., BC850...
BC848..., BC849...
Collector-base voltage
BC847..., BC850...
BC848..., BC849...
Emitter-base voltage
BC847..., BC850...
BC848..., BC849...
Collector current I
Peak collector current, tp ≤ 10 ms I
Total power dissipation-
T
≤ 71 °C, BC847-BC850
S
T
≤ 135 °C, BC847BL3-BC848BL3
S
T
≤ 124 °C, BC847W-BC850W
S
Symbol Value Unit
V
CEO
V
45
30
V
CES
50
30
V
CBO
50
30
V
EBO
6
6
C
CM
P
tot
100 mA
200
mW
330
250
250
Junction temperature T
Storage temperature T
j
st
150 °C
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1)
BC847-BC850
BC847BL3-BC848BL3
BC847W-BC850W
1
For calculation of R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
R
thJS
≤ 240
≤ 60
≤ 105
K/W
2
2011-09-09
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
BC847...-BC850...
Collector-emitter breakdown voltage
I
= 10 mA, IB = 0 , BC847..., BC850...
C
I
= 10 mA, IB = 0 , BC848..., BC849...
C
Collector-base breakdown voltage
I
= 10 µA, IE = 0 , BC847..., BC850...
C
I
= 10 µA, IE = 0 , BC848..., BC849...
C
Emitter-base breakdown voltage
I
= 0 , IC = 10 µA
E
Collector-base cutoff current
V
= 45 V, IE = 0
CB
V
= 30 V, IE = 0 , TA = 150 °C
CB
DC current gain1)
I
= 10 µA, VCE = 5 V, hFE-grp.A
C
I
= 10 µA, VCE = 5 V, hFE-grp.B
C
I
= 10 µA, VCE = 5 V, hFE-grp.C
C
I
= 2 mA, VCE = 5 V, hFE-grp.A
C
I
= 2 mA, VCE = 5 V, hFE-grp.B
C
I
= 2 mA, VCE = 5 V, hFE-grp.C
C
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE
45
30
50
30
-
-
-
-
- 6 -
-
-
-
-
-
110
200
420
0.015
5
140
250
480
180
290
520
-
-
-
-
-
-
-
-
-
220
450
800
V
µA
-
Collector-emitter saturation voltage1)
I
= 10 mA, IB = 0.5 mA
C
I
= 100 mA, IB = 5 mA
C
Base emitter saturation voltage1)
I
= 10 mA, IB = 0.5 mA
C
I
= 100 mA, IB = 5 mA
C
Base-emitter voltage1)
I
= 2 mA, VCE = 5 V
C
I
= 10 mA, VCE = 5 V
C
1
Pulse test: t < 300µs; D < 2%
3
V
CEsat
V
BEsat
V
BE(ON)
-
-
-
-
580
-
90
200
700
900
660
-
mV
250
600
-
-
700
770
2011-09-09
Electrical Characteristics at TA = 25°C, unless otherwise specified
BC847...-BC850...
Parameter
AC Characteristics
Transition frequency
= 10 mA, VCE = 5 V, f = 100 MHz
I
C
Collector-base capacitance
= 10 V, f = 1 MHz
V
CB
Emitter-base capacitance
= 0.5 V, f = 1 MHz
V
EB
Short-circuit input impedance
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A
I
C
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B
I
C
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C
I
C
Open-circuit reverse voltage transf. ratio
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A
I
C
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B
I
C
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C
I
C
Symbol Values Unit
min. typ. max.
f
C
C
h
h
T
cb
eb
11e
12e
- 250 - MHz
- 0.95 - pF
- 9 -
-
-
-
-
-
-
2.7
4.5
8.7
1.5
2
3
kΩ
-
-
-
10
-4
-
-
-
Short-circuit forward current transf. ratio
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A
I
C
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B
I
C
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C
I
C
Open-circuit output admittance
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A
I
C
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B
I
C
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C
I
C
Noise figure
= 200 µA, VCE = 5 V, f = 1 kHz,
I
C
∆ f = 200 Hz, R
= 2 kΩ, BC849..., BC850...
S
Equivalent noise voltage
= 200 µA, VCE = 5 V, RS = 2 kΩ,
I
C
f = 10 ... 50 Hz , BC850...
h
h
F
V
21e
22e
n
-
-
-
-
-
-
200
330
600
18
30
60
-
-
-
µS
-
-
-
- 1.2 4 dB
- - 0.135 µV
4
2011-09-09
BC847...-BC850...
DC current gain hFE = ƒ(IC)
= 5 V
V
CE
3
10
5
100
h
FE
2
10
5
1
10
5
0
10
10 10 10 10
C
25
C
-50
C
-2
-1
555
10
0
Collector-emitter saturation voltage
= ƒ(V
I
C
EHP00365
12
mA
Ι
C
10
mA
Ι
C
10
10
10
5
5
-1
2
1
0
0
), hFE = 20
CEsat
100
C
25
C
-50
C
0.1 0.2 0.4
EHP00367
0.3 0.5
V
V
CEsat
Base-emitter saturation voltage
= ƒ(V
I
C
Ι
C
10
10
mA
10
10
2
1
5
0
5
-1
0
), hFE = 20
BEsat
C
100
C
C
25
-50
C
0.2 0.4 0.8
0.6 V 1.2
EHP00364
V
BEsat
Collector cutoff current I
= 30 V
V
CB
4
10
nA
Ι
CB0
3
10
5
2
10
5
1
10
5
0
10
0 50 100 150
CBO
= ƒ(TA)
EHP00415
max
typ
˚C
T
A
5
2011-09-09
BC847...-BC850...
Transition frequency fT = ƒ(IC)
= 5 V
V
CE
3
10
MHz
f
T
5
2
10
5
1
10
-1 0 1 2
10 10 10 10
5
5
EHP00363
mA
Ι
C
Collector-base capacitance C
Emitter-base capacitance C
13
pF
11
10
EB
C
9
/
CB
8
C
7
6
5
4
3
2
1
0
0 4 8 12 16
CEB
eb
= ƒ(V
cb
= ƒ(V
EB
V
VCB/V
CB
)
CCB
)
22
EB
Total power dissipation P
BC847-BC850
360
mW
300
270
240
tot
P
210
180
150
120
90
60
30
0
0 15 30 45 60 75 90 105 120
= ƒ(TS)
tot
°C
T
Total power dissipation P
= ƒ(TS)
tot
BC847BL3/BC848BL3
300
mW
250
225
200
tot
P
175
150
125
100
75
50
25
150
S
0
0 15 30 45 60 75 90 105 120
°C
150
T
S
6
2011-09-09
BC847...-BC850...
Total power dissipation P
BC847W-BC850W
300
mW
250
225
200
tot
P
175
150
125
100
75
50
25
0
0 15 30 45 60 75 90 105 120
= ƒ(TS)
tot
Permissible Pulse Load
P
totmax/PtotDC
= ƒ(tp)
BC847/W-BC850/W
T
D
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-2
EHP00362
=
s
t
p
10
0
3
10
P
totmax
totPDC
10
=
D
2
t
p
t
p
T
5
1
10
5
0
°C
150
T
S
10
-6
10
10-510-410-310
Permissible Puls Load R
BC847BL3, BC848BL3
2
10
1
10
thJS
R
0
10
-1
10
-7
-6
-5
10
10
10
10
-4
thJS
10
= ƒ (tp)
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
-3
10
Permissible Pulse Load
P
totmax/PtotDC
= ƒ(tp)
BC847BL3, BC848BL3
3
10
totDC
/ P
2
10
totmax
P
1
10
0
-2
s
t
0
10
p
10
10
-7
-6
10
-5
10
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-4
-3
10
10
-2
t
0
s
10
p
7
2011-09-09
BC847...-BC850...
Noise figure F = ƒ(VCE)
= 0.2mA, RS = 2kΩ , f = 1kHz
I
C
BC 846...850 EHP00370
20
dB
F
15
10
5
0
-1 0 1 2
10 10 10 10
5
Noise figure F = ƒ(f)
= 0.2 mA, VCE = 5V, RS = 2 kΩ
I
C
BC 846...850 EHP00371
20
dB
F
15
10
5
0
V
V
CE
-2 -1 1 2
10 10 10 10
10
0
kHz
f
Noise figure F = ƒ(IC)
= 5V, f = 120Hz
V
CE
BC 846...850 EHP00372
20
dB
F
15
R
= 1 M 100 k 10 k
S
10
5
0
-3 -2 0 1
10 10 10 10
ΩΩΩ
10
Noise figure F = ƒ(IC)
= 5V, f = 1kHz
V
CE
BC 846...850 EHP00373
20
dB
F
15
R
= 1 M
S
10
Ω
500
Ω
1 k
5
Ω
1 k
0
-1
Ι
mA
C
-3 -2 0 1
10 10 10 10
100 k
ΩΩΩ
-1
10
10 k
500
mA
Ι
C
Ω
8
2011-09-09
Noise figure F = ƒ(IC)
= 5V, f = 10kHz
V
CE
BC 846...850 EHP00374
20
dB
F
BC847...-BC850...
15
10
5
0
10 10 10 10
500
1 k
-3 -2 0 1
R
Ω
= 1 M
S
Ω
100 k
10 k
Ω
-1
10
Ι
mA
C
Ω
Ω
9
2011-09-09
Package Outline
Foot Print
Package SOT23
±0.1
2.9
12
1)
+0.1
0.4
-0.05
1.9
0.25MBC
1) Lead width can be 0.6 max. in dambar area
B
3
C
0.95
0.8
0.15 MIN.
±0.15
2.4
0.2
±0.1
1
0.1 MAX.
10˚ MAX.
0.08...0.15
0...8˚
M
A
BC847...-BC850...
±0.1
1.3
10˚ MAX.
A
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
Pin 1
0.8 1.2
EH
4
0.9
s
0.9 0.91.3
Manufacturer
2005, June
Date code (YM)
BCW66
Type code
0.2
Pin 1
3.15
2.13
10
2.65
8
1.15
2011-09-09
Package Outline
Package SOT323
±0.2
2
0.3
+0.1
-0.05
3x
M
0.1
3
0.1 MAX.
0.1
0.9
BC847...-BC850...
±0.1
A
Foot Print
Marking Layout (Example)
12
0.650.65
0.6
0.8
0.65
0.65
1.6
±0.1
2.1
0.1 MIN.
M
0.2 A
0.15
+0.1
-0.05
±0.1
1.25
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
Pin 1
Pin 1
4
2.15
Manufacturer
2005, June
Date code (YM)
BCR108W
Type code
0.2
8
2.3
1.1
11
2011-09-09
Package TSLP-3-1
Package Outline
Top view Bottom view
+0.1
0.4
0.05 MAX.
1
3
2
Pin 1
marking
1) Dimension applies to plated terminal
0.5
2x 0.15
±0.035
0.35
±0.035
±0.05
0.65
±0.05
±0.05
0.6
1)
3
2
1)
Foot Print
For board assembly information please refer to Infineon website "Packages"
1
0.225
0.15
0.6
0.35
0.3
0.35
0.225
0.45
0.945
0.2
0.2
0.17
1)
1
1)
±0.035
0.25
2x
0.275
0.355
R0.1
BC847...-BC850...
±0.035
0.25
±0.05
1
0.315
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 15.000 Pieces/Reel
Stencil aperturesCopper Solder mask
BFR193L3
Type code
Pin 1 marking
Laser marking
4
1.16
8
0.5
Pin 1
marking
0.76
12
2011-09-09
BC847...-BC850...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
>).
13
2011-09-09
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