Infineon BC847A, BC847B, BC847BL3, BC847BW, BC847C Schematic

NPN Silicon AF Transistors

• For AF input stages and driver applications

• High current gain

• Low collector-emitter saturation voltage

• Low noise between 30 Hz and 15 kHz

• Complementary types:

BC857...-BC860...(PNP)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

1

BC847BL3 is not qualified according AEC Q101

1)

BC847...-BC850...

Type Marking Pin Configuration Package

BC847A

BC847B

BC847BL3*

BC847BW

BC847C

BC847CW

BC848A

BC848B

BC848BL3

BC848BW

BC848C

BC848CW

BC849B

BC849C

BC849CW

1Es

1Fs

1F

1Fs

1Gs

1Js

1Ks

1K

1Ks

1Ls

2Bs

2Cs

1=B

2=E

3=C

-

SOT23

TSLP-3-1

SOT323

SOT23

SOT323

SOT23

TSLP-3-1

SOT323

SOT23

SOT323

SOT23

SOT323

BC850B

BC850BW

BC850C

BC850CW

2Fs

2Gs

* Not qualified according AEC Q101

1=B

2=E

1

3=C

-

SOT23

SOT323

SOT23

SOT323

2011-09-09

Maximum Ratings

g

BC847...-BC850...

Parameter

Collector-emitter voltage

BC847..., BC850...

BC848..., BC849...

Collector-emitter voltage

BC847..., BC850...

BC848..., BC849...

Collector-base voltage

BC847..., BC850...

BC848..., BC849...

Emitter-base voltage

BC847..., BC850...

BC848..., BC849...

Collector current I

Peak collector current, tp ≤ 10 ms I

Total power dissipation-

T

≤ 71 °C, BC847-BC850

S

T

≤ 135 °C, BC847BL3-BC848BL3

S

T

≤ 124 °C, BC847W-BC850W

S

Symbol Value Unit

V

CEO

V

45

30

V

CES

50

30

V

CBO

50

30

V

EBO

6

C

CM

P

tot

100 mA

200

mW

330

250

Junction temperature T

Storage temperature T

j

st

150 °C

-65 ... 150

Thermal Resistance Parameter Symbol Value Unit

Junction - soldering point1)

BC847-BC850

BC847BL3-BC848BL3

BC847W-BC850W

1

For calculation of R

please refer to Application Note AN077 (Thermal Resistance Calculation)

thJA

R

thJS

≤ 240

≤ 60

≤ 105

K/W

2

2011-09-09

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter

Symbol Values Unit

min. typ. max.

DC Characteristics

BC847...-BC850...

Collector-emitter breakdown voltage

I

= 10 mA, IB = 0 , BC847..., BC850...

C

I

= 10 mA, IB = 0 , BC848..., BC849...

C

Collector-base breakdown voltage

I

= 10 µA, IE = 0 , BC847..., BC850...

C

I

= 10 µA, IE = 0 , BC848..., BC849...

C

Emitter-base breakdown voltage

I

= 0 , IC = 10 µA

E

Collector-base cutoff current

V

= 45 V, IE = 0

CB

V

= 30 V, IE = 0 , TA = 150 °C

CB

DC current gain1)

I

= 10 µA, VCE = 5 V, hFE-grp.A

C

I

= 10 µA, VCE = 5 V, hFE-grp.B

C

I

= 10 µA, VCE = 5 V, hFE-grp.C

C

I

= 2 mA, VCE = 5 V, hFE-grp.A

C

I

= 2 mA, VCE = 5 V, hFE-grp.B

C

I

= 2 mA, VCE = 5 V, hFE-grp.C

C

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

h

FE

45

30

50

30

-

- 6 -

-

110

200

420

0.015

5

140

250

480

180

290

520

-

220

450

800

V

µA

-

Collector-emitter saturation voltage1)

I

= 10 mA, IB = 0.5 mA

C

I

= 100 mA, IB = 5 mA

C

Base emitter saturation voltage1)

I

= 10 mA, IB = 0.5 mA

C

I

= 100 mA, IB = 5 mA

C

Base-emitter voltage1)

I

= 2 mA, VCE = 5 V

C

I

= 10 mA, VCE = 5 V

C

1

Pulse test: t < 300µs; D < 2%

3

V

CEsat

V

BEsat

V

BE(ON)

-

580

-

90

200

700

900

660

-

mV

250

600

-

700

770

2011-09-09

Electrical Characteristics at TA = 25°C, unless otherwise specified

BC847...-BC850...

Parameter

AC Characteristics

Transition frequency

= 10 mA, VCE = 5 V, f = 100 MHz

I

C

Collector-base capacitance

= 10 V, f = 1 MHz

V

CB

Emitter-base capacitance

= 0.5 V, f = 1 MHz

V

EB

Short-circuit input impedance

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A

I

C

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B

I

C

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C

I

C

Open-circuit reverse voltage transf. ratio

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A

I

C

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B

I

C

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C

I

C

Symbol Values Unit

min. typ. max.

f

C

h

T

cb

eb

11e

12e

- 250 - MHz

- 0.95 - pF

- 9 -

-

2.7

4.5

8.7

1.5

2

3

kΩ

-

10

-4

-

Short-circuit forward current transf. ratio

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A

I

C

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B

I

C

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C

I

C

Open-circuit output admittance

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A

I

C

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B

I

C

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C

I

C

Noise figure

= 200 µA, VCE = 5 V, f = 1 kHz,

I

C

∆ f = 200 Hz, R

= 2 kΩ, BC849..., BC850...

S

Equivalent noise voltage

= 200 µA, VCE = 5 V, RS = 2 kΩ,

I

C

f = 10 ... 50 Hz , BC850...

h

F

V

21e

22e

n

-

200

330

600

18

30

60

-

µS

-

- 1.2 4 dB

- - 0.135 µV

4

2011-09-09

BC847...-BC850...

DC current gain hFE = ƒ(IC)

= 5 V

V

CE

3

10

5

100

h

FE

2

10

5

1

10

5

0

10

10 10 10 10

C

25

C

-50

C

-2

-1

555

10

0

Collector-emitter saturation voltage

= ƒ(V

I

C

EHP00365

12

mA

Ι

C

10

mA

Ι

C

10

5

-1

2

1

0

), hFE = 20

CEsat

100

C

25

C

-50

C

0.1 0.2 0.4

EHP00367

0.3 0.5

V

CEsat

Base-emitter saturation voltage

= ƒ(V

I

C

Ι

C

10

mA

10

2

1

5

0

5

-1

0

), hFE = 20

BEsat

C

100

C C

25

-50

C

0.2 0.4 0.8

0.6 V 1.2

EHP00364

V

BEsat

Collector cutoff current I

= 30 V

V

CB

4

10 nA

Ι

CB0

3

10

5

2

10

5

1

10

5

0

10

0 50 100 150

CBO

= ƒ(TA)

EHP00415

max

typ

˚C

T

A

5

2011-09-09

Infineon BC847A, BC847B, BC847BL3, BC847BW, BC847C Schematic [ru]