Datasheet BC846AT, BC846BT, BC847AT, BC847BT, BC847CT Datasheet (INFINEON)

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NPN Silicon AF Transistors



For AF input stages and driver applications



High current gain



Low collector-emitter saturation voltage



Low noise between 30 Hz and 15 kHz



Complementary types:

BC856T, BC857T,

BC858T, BC859T, BC860T

3

BC846T...BC850T

2

1

VPS05996

Type Marking Pin Configuration Package

BC846AT

BC846BT

BC847AT

BC847BT

BC847CT

BC848AT

BC848BT

BC848CT

BC849BT

BC849CT

BC850BT

BC850CT

1As

1Bs

1Es

1Fs

1Gs

1Js

1Ks

1Ls

2Bs

2cs

2Fs

2Gs

1 = B

2 = E

3 = C

SC75

1 Aug-01-2002

Maximum Ratings

g

BC846T...BC850T

Parameter

Collector-emitter voltage V Collector-base voltage V Collector-emitter voltage V Emitter-base voltage V DC collector current I Peak collector current I Peak base current I Peak emitter current I Total power dissipation, TS = 109 °C P Junction temperature T Storage temperature T

Thermal Resistance

Junction - soldering point

1)

Symbol BC846T BC847T

BC850T

65 45 30 V

80 50 30

6 6 5

100 mA

200 mA

200

250 mW

150 °C

-65 ... 150



165 K/W

C

CM

BM

EM

R

CEO

CBO

CES

EBO

tot

j

st

thJS

BC848T

BC849T

Unit

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

= 10 mA, IB = 0 BC846T

C

I

= 10 mA, IB = 0 BC847T/BC850T

C

I

= 10 mA, IB = 0 BC848T/BC849T

C

Collector-base breakdown voltage

I

= 10 µA, IE = 0 BC846T

C

I

= 10 µA, IE = 0 BC847T/850T

C

I

= 10 µA, IE = 0 BC848T/849T

C

1

For calculation of

R

please refer to Application Note Thermal Resistance

thJA

V

(BR)CEO

V

(BR)CBO

65

45

30

80

50

30

-

V

-

2 Aug-01-2002

Electrical Characteristics at TA = 25°C, unless otherwise specified.

BC846T...BC850T

Parameter

DC Characteristics

Collector-emitter breakdown voltage

I

= 10 µA, VBE = 0 BC846T

C

I

= 10 µA, VBE = 0 BC847T/850T

C

I

= 10 µA, VBE = 0 BC848T/849T

C

Emitter-base breakdown voltage

I

= 1 µA, IC = 0 BC846T

E

I

= 1 µA, IC = 0 BC847T/BC850T

E

I

= 1 µA, IC = 0 BC848T/BC849T

E

Collector cutoff current

V

= 30 V, IE = 0

CB

Collector cutoff current

V

= 30 V, IE = 0 , TA = 150 °C

CB

Symbol Values Unit

min. typ. max.

V

(BR)CES

V

(BR)EBO

I

CBO

I

CBO

65

50

30

6

5

-

- - 15 nA

- - 5 µA

V

DC current gain 1)

I

= 10 µA, V

C

I

= 10 µA, V

C

I

= 10 µA, V

C

= 5 V hFE-group A

CE

= 5 V hFE-group B

CE

= 5 V hFE-group C

CE

DC current gain 1)

I

= 2 mA, VCE = 5 V hFE-group A

C

I

= 2 mA, VCE = 5 V hFE-group B

C

I

= 2 mA, VCE = 5 V hFE-group C

C

Collector-emitter saturation voltage1)

I

= 10 mA, IB = 0.5 mA

C

I

= 100 mA, IB = 5 mA

C

Base-emitter saturation voltage 1)

I

= 10 mA, IB = 0.5 mA

C

I

= 100 mA, IB = 5 mA

C

Base-emitter voltage 1)

I

= 2 mA, VCE = 5 V

C

I

= 10 mA, VCE = 5 V

C

h

FE

h

FE

V

CEsat

V

BEsat

V

BE(ON)

-

110

200

420

-

580

-

140

250

480

180

290

520

90

200

700

900

660

-

220

450

800

250

600

-

700

770

-

mV

1) Pulse test: t ≤=300µs, D = 2%

3 Aug-01-2002

Electrical Characteristicsat TA = 25°C, unless otherwise specified.

BC846T...BC850T

Parameter

AC Characteristics

Transition frequency

I

= 20 mA, VCE = 5 V, f = 100 MHz

C

Collector-base capacitance

V

= 10 V, f = 1 MHz

CB

Emitter-base capacitance

= 0.5 V, f = 1 MHz

V

EB

Short-circuit input impedance

I

= 2 mA, VCE = 5 V, f = 1 kHz hFE-group A

C

I

= 2 mA, VCE = 5 V, f = 1 kHz hFE-group B

C

I

= 2 mA, VCE = 5 V, f = 1 kHz hFE-group C

C

Open-circuit reverse voltage transf.ratio

I

= 2 mA, VCE = 5 V, f = 1 kHz hFE-group A

C

= 2 mA, VCE = 5 V, f = 1 kHz hFE-group B

I

C

I

= 2 mA, VCE = 5 V, f = 1 kHz hFE-group C

C

Symbol Values Unit

min. typ. max.

f

C

h

T

cb

eb

11e

12e

- 250 - MHz

- 3 - pF

- 8 -

-

2.7

4.7

8.7

1.5

2

3

k



-

10

-4

-

Short-circuit forward current transf.ratio

I

= 2 mA, VCE = 5 V, f = 1 kHz hFE-group A

C

= 2 mA, VCE = 5 V, f = 1 kHz hFE-group B

I

C

I

= 2 mA, VCE = 5 V, f = 1 kHz hFE-group C

C

Open-circuit output admittance

I

= 2 mA, VCE = 5 V, f = 1 kHz hFE-group A

C

I

= 2 mA, VCE = 5 V, f = 1 kHz hFE-group B

C

I

= 2 mA, VCE = 5 V, f = 1 kHz hFE-group C

C

h

21e

22e

-

200

330

600

18

30

60

-



S

-

4 Aug-01-2002

Electrical Characteristics at TA = 25°C, unless otherwise specified.

BC846T...BC850T

Parameter

AC Characteristics

Noise figure

I

= 200 µA, VCE = 5 V, RS = 2 k,

C

f = 1 kHz, I

= 200 µA, VCE = 5 V, RS = 2 k,

C

f = 1 kHz,



f = 200 Hz BC849T



f = 200 Hz BC850T

Equivalent noise voltage

I

= 200 µA, VCE = 5 V, RS = 2 k,

C

f = 10 ... 50 Hz BC850T

Symbol Values Unit

min. typ. max.

F

V

n

-

- - 0.135 µV

1.2

1

dB

4

5 Aug-01-2002

BC846T...BC850T

O

Total power dissipation P

300

mW

200

tot

P

150

100

50

= f (TS)

tot

Collector-base capacitance C

Emitter-base capacitance C

BC 846...850

12 pF

C

CB0

(

)

C

EB0

10

8

6

4

2

EB

C

EB

C

CB

= f (V

CB

= f (V

EHP00361

CB

EBO

)

0

0 20 40 60 80 100 120

Permissible Pulse Load

P

totmax

/ P

totDC

= f (tp)

3

10

totDC

/ P

10

totmax

P

10

2

1

D=0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

°C

T

CE

10

0

-1 0 1

10

5

10 10

= f (IC)

T

= 5V

3

V

CB0

EHP00363

)

(

V

EB0

150

S

Transition frequency f

V

MHz

f

T

5

2

10

5

10

0

10

-6

10

-5

10

-4

10

-3

10

-2

s

t

0

10

p

1

10

-1 0 1 2

10 10 10 10

5

mA

Ι

C

6 Aug-01-2002

BC846T...BC850T

Collector cutoff current I

V

= 30V

CB

4

10

nA

Ι

CB0

3

10

5

2

10

5

1

10

5

0

10

5

-1

10

0 50 100 150

max

CBO

= f (TA)

EHP00381

typ

C

T

Collector-emitter saturation voltage

I

= f (V

C

2

10

mA

Ι

C

1

10

5

0

10

5

-1

10

0

A

), hFE = 20

CEsat

100

C

25

C

-50

C

0.1 0.2 0.4

EHP00367

0.3 0.5

V

CEsat

DC current gain h

V

= 5V

CE

3

10

5

100

25

-50

C

h

FE

2

10

= f (IC)

FE

5

1

10

5

0

10

-2

10 10 10 10

-1

555

10

0

Base-emitter saturation voltage

I

= f (V

C

EHP00365

Ι

C

mA

12

mA

Ι

C

10

), hFE = 20

BEsat

2

C

100

C C

25

-50

1

C

EHP00364

5

0

5

-1

0

0.2 0.4 0.8

0.6 V 1.2

V

BEsat

7 Aug-01-2002

BC846T...BC850T

h parameter h

V

= 5V

CE

2

10

5

h

e

h

11e

1

10

5

h

12e

0

10

h

21e

5

h

22e

-1

10

-1 0 1

10 10 10

= f (IC) normalized

e

V

= 5 V

CE

5

EHP00368

mA

Ι

C

h parameter h

I

= 2mA

C

2.0

h

e

1.5

1.0

0.5

0

0102030

= f (VCE) normalized

e

Ι

=

C

h

EHP00369

2 mA

21

e

11

e

12

e

22

V

CE

Noise figure F = f (V

I

= 0.2mA, RS = 2k, f = 1kHz

C

BC 846...850 EHP00370

20

dB

F

CE

)

15

10

5

0

-1 0 1 2

10 10 10 10

5

Noise figure F = f (f)

I

= 0.2mA, VCE = 5V, RS = 2k

C

BC 846...850 EHP00371

20

dB

F

15

10

5

0

V

CE

-2 -1 1 2

10 10 10 10

10

0



kHz

f

8 Aug-01-2002

BC846T...BC850T

Noise figure F = f (I

V

= 5V, f = 120Hz

CE

BC 846...850 EHP00372

20

dB

F

15

R

= 1 M 100 k 10 k

ΩΩΩ

S

10

5

0

-3 -2 0 1

10 10 10 10

)

C

-1

10

1 k

Noise figure F = f (I

V

= 5V, f = 1kHz

CE

BC 846...850 EHP00373

20

dB

F

15

R

10

Ω

500

Ω

1 k

5

Ω

0

-3 -2 0 1

mA

Ι

C

10 10 10 10

= 1 M

S

)

C

100 k

ΩΩΩ

-1

10

10 k

500

mA

Ι

C

Ω

Noise figure F = f (I

V

= 5V, f = 10kHz

CE

BC 846...850 EHP00374

20

dB

)

C

F

15

10

5

0

10 10 10 10

500

1 k

-3 -2 0 1

R

S

= 1 M

Ω

-1

10

100 k

10 k

mA

Ι

C

Ω

9 Aug-01-2002

Datasheet BC846AT, BC846BT, BC847AT, BC847BT, BC847CT Datasheet (INFINEON)

Specifications and Main Features

Frequently Asked Questions

User Manual