INFINEON BC846AT, BC846BT, BC847AT, BC847BT, BC847CT User Manual

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NPN Silicon AF Transistors



For AF input stages and driver applications



High current gain



Low collector-emitter saturation voltage



Low noise between 30 Hz and 15 kHz



Complementary types:

BC856T, BC857T,

BC858T, BC859T, BC860T

3

BC846T...BC850T

2

1

VPS05996

Type Marking Pin Configuration Package

BC846AT

BC846BT

BC847AT

BC847BT

BC847CT

BC848AT

BC848BT

BC848CT

BC849BT

BC849CT

BC850BT

BC850CT

1As

1Bs

1Es

1Fs

1Gs

1Js

1Ks

1Ls

2Bs

2cs

2Fs

2Gs

1 = B

2 = E

3 = C

SC75

1 Aug-01-2002

Maximum Ratings

g

BC846T...BC850T

Parameter

Collector-emitter voltage V Collector-base voltage V Collector-emitter voltage V Emitter-base voltage V DC collector current I Peak collector current I Peak base current I Peak emitter current I Total power dissipation, TS = 109 °C P Junction temperature T Storage temperature T

Thermal Resistance

Junction - soldering point

1)

Symbol BC846T BC847T

BC850T

65 45 30 V

80 50 30

6 6 5

100 mA

200 mA

200

250 mW

150 °C

-65 ... 150



165 K/W

C

CM

BM

EM

R

CEO

CBO

CES

EBO

tot

j

st

thJS

BC848T

BC849T

Unit

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

= 10 mA, IB = 0 BC846T

C

I

= 10 mA, IB = 0 BC847T/BC850T

C

I

= 10 mA, IB = 0 BC848T/BC849T

C

Collector-base breakdown voltage

I

= 10 µA, IE = 0 BC846T

C

I

= 10 µA, IE = 0 BC847T/850T

C

I

= 10 µA, IE = 0 BC848T/849T

C

1

For calculation of

R

please refer to Application Note Thermal Resistance

thJA

V

(BR)CEO

V

(BR)CBO

65

45

30

80

50

30

-

V

-

2 Aug-01-2002

Electrical Characteristics at TA = 25°C, unless otherwise specified.

BC846T...BC850T

Parameter

DC Characteristics

Collector-emitter breakdown voltage

I

= 10 µA, VBE = 0 BC846T

C

I

= 10 µA, VBE = 0 BC847T/850T

C

I

= 10 µA, VBE = 0 BC848T/849T

C

Emitter-base breakdown voltage

I

= 1 µA, IC = 0 BC846T

E

I

= 1 µA, IC = 0 BC847T/BC850T

E

I

= 1 µA, IC = 0 BC848T/BC849T

E

Collector cutoff current

V

= 30 V, IE = 0

CB

Collector cutoff current

V

= 30 V, IE = 0 , TA = 150 °C

CB

Symbol Values Unit

min. typ. max.

V

(BR)CES

V

(BR)EBO

I

CBO

I

CBO

65

50

30

6

5

-

- - 15 nA

- - 5 µA

V

DC current gain 1)

I

= 10 µA, V

C

I

= 10 µA, V

C

I

= 10 µA, V

C

= 5 V hFE-group A

CE

= 5 V hFE-group B

CE

= 5 V hFE-group C

CE

DC current gain 1)

I

= 2 mA, VCE = 5 V hFE-group A

C

I

= 2 mA, VCE = 5 V hFE-group B

C

I

= 2 mA, VCE = 5 V hFE-group C

C

Collector-emitter saturation voltage1)

I

= 10 mA, IB = 0.5 mA

C

I

= 100 mA, IB = 5 mA

C

Base-emitter saturation voltage 1)

I

= 10 mA, IB = 0.5 mA

C

I

= 100 mA, IB = 5 mA

C

Base-emitter voltage 1)

I

= 2 mA, VCE = 5 V

C

I

= 10 mA, VCE = 5 V

C

h

FE

h

FE

V

CEsat

V

BEsat

V

BE(ON)

-

110

200

420

-

580

-

140

250

480

180

290

520

90

200

700

900

660

-

220

450

800

250

600

-

700

770

-

mV

1) Pulse test: t ≤=300µs, D = 2%

3 Aug-01-2002