INFINEON BC807, BC808 User Manual
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PNP Silicon AF Transistors
BC807, BC808
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Comlementary types: BC817, BC818 (NPN)
1
Type Marking Pin Configuration Package
3
BC807-16
BC807-25
BC807-40
BC808-16
BC808-25
5As
5Bs
5Cs
5Es
5Fs
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
SOT23
SOT23
SOT23
SOT23
SOT23
2
VPS05161
BC808-40
5Gs
1 = B
2 = E
3 = C
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Peak collector current 1 A
Base current mA100
Peak base current 200
Total power dissipation, T
= 79 °C P
S
Junction temperature 150 °C
Storage temperature -65 ... 150
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
tot
T
j
T
st
BC807 BC808
45 25 V
50 30
5 5
Unit
mADC collector current 500
mW330
Thermal Resistance
Junction - soldering point
1
For calculation of R
thJA
1)
please refer to Application Note Thermal Resistance
R
thJS
215 K/W
1 Nov-29-2001
BC807, BC808
A
)
Electrical Characteristics at T
= 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 10 mA, IB = 0
C
Collector-base breakdown voltage
I
= 10 µA, IE = 0
C
Emitter-base breakdown voltage
I
= 10 µA, IC = 0
E
Collector cutoff current
V
= 25 V, IE = 0
CB
Collector cutoff current
V
= 25 V, IE = 0 , TA = 150 °C
CB
BC807
BC808
BC807
BC808
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CBO
45
25
50
30
-
-
-
-
-
-
-
-
5 - -
- - 100 nA
- - 50 µA
V
Emitter cutoff current
V
= 4 V, IC = 0
EB
DC current gain 1)
I
= 100 mA, VCE = 1 V
C
DC current gain 1)
I
= 500 mA, VCE = 1 V
C
Collector-emitter saturation voltage1
I
= 500 mA, IB = 50 mA
C
Base-emitter saturation voltage 1)
I
= 500 mA, IB = 50 mA
C
h
FE
h
FE
h
FE
-grp. 16
-grp. 25
-grp. 40
I
EBO
h
FE
h
FE
V
CEsat
V
BEsat
- - 100 nA
100
160
250
160
250
350
250
400
630
40 - -
- - 0.7 V
- - 1.2
-
1) Pulse test: t ≤ 300µs, D = 2%
2 Nov-29-2001
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