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查询BC807-16供应商
PNP Silicon AF Transistors
BC807, BC808
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Comlementary types: BC817, BC818 (NPN)
1
Type Marking Pin Configuration Package
3
BC807-16
BC807-25
BC807-40
BC808-16
BC808-25
5As
5Bs
5Cs
5Es
5Fs
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
SOT23
SOT23
SOT23
SOT23
SOT23
2
VPS05161
BC808-40
5Gs
1 = B
2 = E
3 = C
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Peak collector current 1 A
Base current mA100
Peak base current 200
Total power dissipation, T
= 79 °C P
S
Junction temperature 150 °C
Storage temperature -65 ... 150
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
tot
T
j
T
st
BC807 BC808
45 25 V
50 30
5 5
Unit
mADC collector current 500
mW330
Thermal Resistance
Junction - soldering point
1
For calculation of R
thJA
1)
please refer to Application Note Thermal Resistance
R
thJS
215 K/W
1 Nov-29-2001
BC807, BC808
A
)
Electrical Characteristics at T
= 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 10 mA, IB = 0
C
Collector-base breakdown voltage
I
= 10 µA, IE = 0
C
Emitter-base breakdown voltage
I
= 10 µA, IC = 0
E
Collector cutoff current
V
= 25 V, IE = 0
CB
Collector cutoff current
V
= 25 V, IE = 0 , TA = 150 °C
CB
BC807
BC808
BC807
BC808
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CBO
45
25
50
30
-
-
-
-
-
-
-
-
5 - -
- - 100 nA
- - 50 µA
V
Emitter cutoff current
V
= 4 V, IC = 0
EB
DC current gain 1)
I
= 100 mA, VCE = 1 V
C
DC current gain 1)
I
= 500 mA, VCE = 1 V
C
Collector-emitter saturation voltage1
I
= 500 mA, IB = 50 mA
C
Base-emitter saturation voltage 1)
I
= 500 mA, IB = 50 mA
C
h
FE
h
FE
h
FE
-grp. 16
-grp. 25
-grp. 40
I
EBO
h
FE
h
FE
V
CEsat
V
BEsat
- - 100 nA
100
160
250
160
250
350
250
400
630
40 - -
- - 0.7 V
- - 1.2
-
1) Pulse test: t ≤ 300µs, D = 2%
2 Nov-29-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BC807, BC808
Parameter
AC Characteristics
Transition frequency
I
= 50 mA, VCE = 5 V, f = 100 MHz
C
V
= 10 V, f = 1 MHz
CB
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz
EB
Symbol Values Unit
min. typ. max.
f
C
C
T
cb
eb
- -200 MHz
- 10 pFCollector-base capacitance
-
- 60 -
3 Nov-29-2001
BC807, BC808
Total power dissipation P
360
mW
300
270
240
tot
P
210
180
150
120
90
60
30
0
0 15 30 45 60 75 90 105 120
= f(TS)
tot
°C
T
Transition frequency f
= 5V
V
CE
3
10
MHz
f
T
5
2
10
= f (IC)
T
EHP00210
5
1
10
150
S
03
10
10
1
10
2
10mA
Ι
C
Permissible pulse load
P
totmax
P
totmax
totPDC
10
10
10
10
/ P
3
2
5
1
5
0
10
-6
= f (tp)
totDC
=
D
10-510-410-310
Collector cutoff current I
= 25V
V
CBO
EHP00212
t
p
t
p
T
T
D
=
Ι
0
0.005
CBO
10
nA
10
10
5
4
3
max
CBO
= f(TA)
EHP00213
0.01
0.02
0.05
0.1
0.2
10
2
typ
0.5
1
10
0
-2
s
t
p
10
0
10
0
50 100
˚C
150
T
A
4 Nov-29-2001
BC807, BC808
Base-emitter saturation voltage
I
C
Ι
C
= f(V
3
10
mA
2
10
5
1
10
5
0
10
5
-1
10
0
BEsat
), hFE = 10
˚C
150
25
˚C
˚C
-50
1.0 3.0
2.0 V 4.0
EHP00214
V
BEsat
Collector-emitter saturation voltage
= f (V
I
C
Ι
C
10
mA
10
10
10
10
3
2
5
1
5
0
5
-1
0
CEsat
), hFE = 10
150
˚C
25
˚C
-50
˚C
0.2 0.6
0.4 V 0.8
EHP00215
V
CEsat
DC current gain hFE = f(IC)
= 1V
V
CE
3
10
5
h
FE
10
5
10
5
10
˚C
100
25
˚C
-50
˚C
2
1
0
-1 3
10
10
0
10
1
10
EHP00216
2
Ι
10mA
C
5 Nov-29-2001
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