INFINEON BB867-02V User Manual
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S
Silicon Tuning Diode
For SAT - Indor units
High capacitance ratio C1V/C
Low series inductance
Excellent uniformity and matching due to
(typ.15.8)
25V
"in-line" matching assembly procedure
BB867-02V
BB867...
1 2
Type Package Configuration L
(nH) Marking
BB867-02V* SC79 single 0.6 Y
* Preliminary
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Diode reverse voltage V
Peak reverse voltage-
(R
5k )
Forward current I
Operating temperature range T
Storage temperature T
Symbol Value Unit
30 V
35
20 mA
-55 ... 150
-55 ... 150
V
R
RM
F
op
stg
°C
1
Nov-14-2002
Electrical Characteristics at TA = 25°C, unless otherwise specified
BB867...
Parameter
DC Characteristics
Reverse current
V
= 30 V
R
= 30 V, TA = 85 °C
V
R
AC Characteristics
Diode capacitance
V
= 1 V, f = 1 MHz
R
= 25 V, f = 1 MHz
V
R
V
= 28 V, f = 1 MHz
R
Capacitance ratio
V
= 1 V, VR = 25 V, f = 1 MHz
R
Capacitance ratio
V
= 1 V, VR = 28 V, f = 1 MHz
R
Capacitance matching1)
V
= 1 V, VR = 28 V, f = 1 MHz
R
Symbol Values Unit
min. typ. max.
I
R
C
T
CT1/C
CT1/C
CT/C
T25
T28
T
-
-
8
0.5
0.45
-
-
8.7
0.55
0.52
10
200
9.4
0.6
-
14 15.8 - -
- 16.7 -
- - 5 %
nA
pF
Series resistance
V
= 5 V, f = 470 MHz
R
1
For details please refer to Application Note 047
r
S
- 2.8 -
2
Nov-14-2002
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