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Silicon Tuning Diodes
Extended frequency range up to 2.5 GHz;
spezial design for use in TV-sat indoor units
High capacitance ratio
BB833
BB833...
1 2
Type Package Configuration L
(nH) Marking
S
BB833 SOD323 single 1.8 white X
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Diode reverse voltage V
Peak reverse voltage-
R
5k
Forward current I
Operating temperature range T
Storage temperature T
Symbol Value Unit
30 V
35
20 mA
-55 ... 150
-55 ... 150
°C
V
R
RM
F
op
stg
1
Nov-07-2002
Electrical Characteristics at TA = 25°C, unless otherwise specified
BB833...
Parameter
DC Characteristics
Reverse current
V
= 30 V
R
= 30 V, TA = 85 °C
V
R
AC Characteristics
Diode capacitance
V
= 1 V, f = 1 MHz
R
V
= 28 V, f = 1 MHz
R
Capacitance ratio
V
= 1 V, VR = 28 V, f = 1 MHz
R
Capacitance matching1)
V
= 1 V, VR = 28 V, f = 1 MHz
R
Series resistance
V
= 1 V, f = 470 MHz
R
Symbol Values Unit
min. typ. max.
I
R
-
-
-
-
20
nA
500
C
T
C
T1/CT28
C
T/CT
r
S
8.5
0.6
9.3
0.75
10
0.9
11 12.4 -
- - 3 %
- 1.8 -
pF
1
For details please refer to Application Note 047.
2
Nov-07-2002
BB833...
Diode capacitance CT = (VR)
f = 1MHz
12
pF
C
T
10
8
6
4
2
0
01
10
10
Temperature coefficient of the diode
capacitance
T
Cc
10
1/°C
10
10
-3
-4
-5
10
EHD07121BB 833
2
10V
V
R
T
= (VR)
Cc
-1
10
0
10
1
V
V
2
10
R
3
Nov-07-2002
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