Silicon Low Leakage Diode
A
j
g
• Low-leakage applications
• Medium speed switching times
• Series pair configuration
BAV199
BAV199F
3
D 1
D 2
BAV199...
1
2
Type Package Configuration Marking
BAV199
BAV199F*
SOT23
TSFP-3
series
series
JYs
JYs
* Preliminary
Maximum Ratings at T
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
Peak reverse voltage V
Forward current I
Non-repetitive peak surge forward current
I
t = 1 µs
t = 1 s
Total power dissipation
T
BAV199,
BAV199F,
≤ 31°C
S
T
≤ tbd
S
P
R
RM
F
FSM
tot
80 V
85
200 mA
A
4.5
0.5
mW
330
250
Junction temperature T
Storage temperature T
st
1
150 °C
-65 ... 150
Mar-10-2004
BAV199...
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1)
R
thJS
BAV199
BAV199F
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
Breakdown voltage
= 100 µA
I
(BR)
Reverse current
= 75 V
V
R
= 75 V, TA = 150 °C
V
R
Forward voltage
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
F
V
I
V
R
(BR)
F
85 - - V
-
-
-
-
-
-
≤ 360
≤ tbd
-
-
-
-
-
-
5
80
900
1000
1100
1250
K/W
nA
mV
AC Characteristics
Diode capacitance
= 0 V, f = 1 MHz
V
R
Reverse recovery time
= 10 mA, IR = 10 mA, measured at IR = 1mA ,
I
F
= 100 Ω
R
L
Test circuit for reverse recovery time
D.U.T.
Pulse generator: t
R
Oscillograph
Oscillograph: R = 50Ω, tr = 0.35ns, C ≤ 1pF
EHN00019
1
For calculation of R
Ι
F
please refer to Application Note Thermal Resistance
thJA
C
t
T
rr
- 2 - pF
- 0.6 1.5 µs
= 10µs, D = 0.05, t
p
= 50Ω
i
= 0.6ns,
r
2
Mar-10-2004
BAV199...
Reverse current I
= 70V
V
R
BAV 199 EHB00085
2
10
Ι
nA
R
1
10
0
10
-1
10
-2
10
-3
10
0 50 100 150
= ƒ (T
R
)
A
Forward Voltage V
= Parameter
I
F
BAV 199 EHB00088
1.5
= ƒ (T
F
)
A
V
max
V
F
=
Ι
150 mA
1.0
F
50 mA
10 mA
typ
1 mA
0.1 mA
0.5
˚C
T
A
0
0 50 100 150
˚C
T
A
Forward current I
= 25°C
T
A
150
Ι
F
mA
100
50
0
0
= ƒ (V
F
)
F
EHB00086BAV 199
maxtyp
0.5 1.0 V 1.5
V
F
Forward current I
BAV199
250
mA
200
175
150
IF
125
100
75
50
25
0
0 15 30 45 60 75 90 105 120
= ƒ (T
F
)
S
°C
150
TS
3
Mar-10-2004
BAV199...
Permissible Puls Load R
3
10
2
10
thJS
R
1
10
0
10
-1
10
-7
-6
-5
10
10
10
10
-4
thJS
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
= ƒ (t
-2
10
)
p
Permissible Pulse Load
I
Fmax
FDC
/I
Fmax
I
/ I
10
-
FDC
2
= ƒ (t
)
p
D = 0
0.005
0.01
0.02
0.05
10
1
0.1
0.2
0.5
0
s
T
0
10
P
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
T
0
10
P
4
Mar-10-2004
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