INFINEON BAV199, BAV199F User Manual
Silicon Low Leakage Diode
A
j
g
• Low-leakage applications
• Medium speed switching times
• Series pair configuration
BAV199
BAV199F
3
D 1
D 2
BAV199...
1
2
Type Package Configuration Marking
BAV199
BAV199F*
SOT23
TSFP-3
series
series
JYs
JYs
* Preliminary
Maximum Ratings at T
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
Peak reverse voltage V
Forward current I
Non-repetitive peak surge forward current
I
t = 1 µs
t = 1 s
Total power dissipation
T
BAV199,
BAV199F,
≤ 31°C
S
T
≤ tbd
S
P
R
RM
F
FSM
tot
80 V
85
200 mA
A
4.5
0.5
mW
330
250
Junction temperature T
Storage temperature T
st
1
150 °C
-65 ... 150
Mar-10-2004
BAV199...
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1)
R
thJS
BAV199
BAV199F
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
Breakdown voltage
= 100 µA
I
(BR)
Reverse current
= 75 V
V
R
= 75 V, TA = 150 °C
V
R
Forward voltage
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
F
V
I
V
R
(BR)
F
85 - - V
-
-
-
-
-
-
≤ 360
≤ tbd
-
-
-
-
-
-
5
80
900
1000
1100
1250
K/W
nA
mV
AC Characteristics
Diode capacitance
= 0 V, f = 1 MHz
V
R
Reverse recovery time
= 10 mA, IR = 10 mA, measured at IR = 1mA ,
I
F
= 100 Ω
R
L
Test circuit for reverse recovery time
D.U.T.
Pulse generator: t
R
Oscillograph
Oscillograph: R = 50Ω, tr = 0.35ns, C ≤ 1pF
EHN00019
1
For calculation of R
Ι
F
please refer to Application Note Thermal Resistance
thJA
C
t
T
rr
- 2 - pF
- 0.6 1.5 µs
= 10µs, D = 0.05, t
p
= 50Ω
i
= 0.6ns,
r
2
Mar-10-2004
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