查询BAT 68W供应商
Silicon Schottky Diodes
BAT 68W
• For mixer applications in the VHF / UHF range
3
• For high-speed switching applications
1
VSO05561
BAT 68-05W
3
13
EHA07002
1
2
EHA07005
1
3
2
EHA07004
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BAT 68-04W
84s
1 = A1
2 =C2
BAT 68-06WBAT 68-04WBAT 68W
1
3 = C1/A2
3
2
EHA07006
SOT-323
2
BAT 68-05W
BAT 68-06W
BAT 68W
85s
86s
83s
1 = A1
1 = C1
1 = A1
2 = A2
2 = C2
2 n.c.
3 = C1/2
3 = A1/2
3 = C
SOT-323
SOT-323
SOT-323
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage
Forward current
Total power dissipation BAT 68W, TS = 97 °C
BAT 68-04W, -05W, -06W , TS = 92 °C
Junction temperature
Operating temperature range
Storage temperature
V
I
P
P
T
T
T
R
F
to
to
op
st
8 V
130 mA
150 mW
150
150 °C
-65 ... 150
-65 ... 150
Thermal Resistance
1)
Junction - ambient
BAT 68W
Junction - ambient 1) BAT 68-04W...
Junction - soldering point BAT 68W
Junction - soldering point BAT 68-04W ...
R
R
R
R
thJA
thJA
thJS
thJS
≤ 435
≤ 550
≤ 355
≤ 390
K/W
1) Package mounted on alumina 15mm x 17.6mm x 0.7mm)
Oct-07-19991
BAT 68W
Electrical Characteristics at T
Parameter
DC characteristics
Breakdown voltage
I
= 100 µA
(BR)
Reverse current
V
= 1 V
R
Reverse current
V
= 1 V, TA = 60 °C
R
Forward voltage
I
= 1 mA
F
I
= 10 mA
F
AC characteristics
Diode capacitance
= 1 V, f = 1 MHz
V
R
= 25 °C, unless otherwise specified.
Symbol Values Unit
min. typ. max.
V
I
I
V
R
R
(BR)
F
8 - - V
- - 0.1 µA
- - 1.2
-
340
C
T
- - 1 pF
318
390
340
500
mV
Differential forward resistance
= 5 mA, f = 10 kHz
I
F
R
f
- - 10
Ω
Oct-07-19992