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查询BAT 68W供应商
Silicon Schottky Diodes
BAT 68W
• For mixer applications in the VHF / UHF range
3
• For high-speed switching applications
1
VSO05561
BAT 68-05W
3
13
EHA07002
1
2
EHA07005
1
3
2
EHA07004
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BAT 68-04W
84s
1 = A1
2 =C2
BAT 68-06WBAT 68-04WBAT 68W
1
3 = C1/A2
3
2
EHA07006
SOT-323
2
BAT 68-05W
BAT 68-06W
BAT 68W
85s
86s
83s
1 = A1
1 = C1
1 = A1
2 = A2
2 = C2
2 n.c.
3 = C1/2
3 = A1/2
3 = C
SOT-323
SOT-323
SOT-323
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage
Forward current
Total power dissipation BAT 68W, TS = 97 °C
BAT 68-04W, -05W, -06W , TS = 92 °C
Junction temperature
Operating temperature range
Storage temperature
V
I
P
P
T
T
T
R
F
to
to
op
st
8 V
130 mA
150 mW
150
150 °C
-65 ... 150
-65 ... 150
Thermal Resistance
1)
Junction - ambient
BAT 68W
Junction - ambient 1) BAT 68-04W...
Junction - soldering point BAT 68W
Junction - soldering point BAT 68-04W ...
R
R
R
R
thJA
thJA
thJS
thJS
≤ 435
≤ 550
≤ 355
≤ 390
K/W
1) Package mounted on alumina 15mm x 17.6mm x 0.7mm)
Oct-07-19991
BAT 68W
A
Electrical Characteristics at T
Parameter
DC characteristics
Breakdown voltage
I
= 100 µA
(BR)
Reverse current
V
= 1 V
R
Reverse current
V
= 1 V, TA = 60 °C
R
Forward voltage
I
= 1 mA
F
I
= 10 mA
F
AC characteristics
Diode capacitance
= 1 V, f = 1 MHz
V
R
= 25 °C, unless otherwise specified.
Symbol Values Unit
min. typ. max.
V
I
I
V
R
R
(BR)
F
8 - - V
- - 0.1 µA
- - 1.2
-
340
C
T
- - 1 pF
318
390
340
500
mV
Differential forward resistance
= 5 mA, f = 10 kHz
I
F
R
f
- - 10
Ω
Oct-07-19992
BAT 68W
Forward current I
= f (TA*;TS)
F
* Package mounted on alumina
BAT 68W
200
200
200
mA
mA
mA
160
160
160
140
140
140
F
F
F
I
I
I
120
120
120
100
100
100
80
80
80
60
60
60
40
40
40
20
20
20
0
0
0
0 20 40 60 80 100 120
0 20 40 60 80 100 120
0 20 40 60 80 100 120
T
A
T
S
°C
°C
°C
150
150
150
TA,TS
TA,TS
TA,TS
Permissible Pulse Load R
BAT 68W
3
10
K/W
2
10
thJS
R
1
10
0
10
-7
-6
-5
10
10
10
10
-4
10
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
-3
= f (tp)
-2
10
s
tp
10
Permissible Pulse Load
I
Fmax
/ I
FDC
= f (tp)
BAT 68W
2
10
-
FDC
/ I
Fmax
I
1
10
0
0
10
10
-7
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-6
-5
-4
-3
10
10
10
10
-2
s
10
0
tp
Oct-07-19993
BAT 68W
Forward current I
= f (TA*;TS)
F
* Package mounted on alumina
BAT 68-04W ...
200
200
200
200
mA
mA
mA
mA
160
160
160
160
140
140
140
140
F
F
F
F
I
I
I
I
120
120
120
120
100
100
100
100
80
80
80
80
60
60
60
60
40
40
40
40
20
20
20
20
0
0
0
0
0 20 40 60 80 100 120
0 20 40 60 80 100 120
0 20 40 60 80 100 120
0 20 40 60 80 100 120
T
A
T
S
°C
°C
°C
°C
150
150
150
150
TA,TS
TA,TS
TA,TS
TA,TS
Permissible Pulse Load R
BAT 68-04W ...
3
10
K/W
2
10
thJS
R
1
10
0
10
-7
10
-6
10
10
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
-5
-4
10
10
thJS
-3
= f (tp)
-2
10
s
tp
10
Permissible Pulse Load
I
Fmax
/ I
FDC
= f (tp)
BAT 68-04W ...
2
10
-
FDC
/ I
Fmax
I
1
10
0
0
10
10
-7
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-6
-5
-4
-3
10
10
10
10
-2
s
10
0
tp
Oct-07-19994
BAT 68W
Forward current I
= Parameter
T
A
2
10
mA
Ι
F
=
T
-40 C
A
10
10
10
10
1
0
-1
-2
0.0
C
25
C85
C150
0.1 0.2 0.3 0.4 0.5 V 0.6
= f (VF)
F
Differential forward resistance rf = f (IF)
f = 10 kHz
EHD07101BAT 68...
r
3
10
Ω
f
2
10
1
10
0
10
-1
10
V
F
10
0
10 mA
EHD07104BAT 68...
1
Ι
2
10
F
Diode capacitance CT = f (VR)
f = 1MHz
1.0
pF
C
T
0.5
EHD07103BAT 68...
0
0
1V
234
V
R
Oct-07-19995
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