查询BAT 68供应商
Silicon Schottky Diodes
BAT 68
• For mixer applications in the VHF / UHF range
3
• For high-speed switching applications
BAT 68-05
3
13
EHA07002
1
2
EHA07005
1
3
2
EHA07004
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking PackagePin Configuration
BAT 68
BAT 68-04
83s
84s
1 = A
1 = A1
2 n.c.
2 = C2
BAT 68-06BAT 68-04BAT 68
1
3 = C
3 = C1/A2
3
2
EHA07006
1
SOT-23
SOT-23
2
VPS05161
BAT 68-05
BAT 68-06
85s
86s
1 = A1
1 = C1
2 = A2
2 = C2
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Symbol Value Unit
V
I
Total power dissipation, TS ≤ 60 °C P
Junction temperature
Storage temperature
T
T
Thermal Resistance
Junction - ambient
Junction - soldering point
1)
R
R
R
F
tot
j
st
thJA
thJS
3 = C1/2
3 = A1/2
-55 ... 150
≤750
≤590
SOT-23
SOT-23
8 V
130 mA
150 mW
150 °C
K/W
1) Package mounted on alumina 15mm x 17.6mm x 0.7mm)
Oct-07-19991
Electrical Characteristics at
T
= 25 °C, unless otherwise specified.
BAT 68
Parameter
DC characteristics
Breakdown voltage
I
= 10 µA
(BR)
Reverse current
V
= 1 V
R
Reverse current
V
= 1 V, TA = 60 °C
R
Forward voltage
I
= 1 mA
F
I
= 10 mA
F
AC characteristics
Diode capacitance
= 0 V, f = 1 MHz
V
R
Symbol Values Unit
min. typ. max.
V
I
I
V
C
R
R
(BR)
F
T
8 - - V
- - 0.1 µA
- - 1.2
-
-
-
-
340
500
mV
- - 1 pF
Differential forward resistance
= 5 mA, f = 10 kHz
I
F
R
f
- - 10
Ω
Oct-07-19992