查询BAT64-02V供应商
Silicon Schottky Diodes
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping application
• Integrated diffused guard ring
• Low forward voltage
BAT64...
BAT64 BAT64-06
3
1 2
BAT64-02V
BAT64-02W
1 2
BAT64-04
BAT64-04W
3
D 1
D 2
1
2
BAT64-05
BAT64-05W
3
D 2
D 1
1
2
BAT64-06W
3
D 2
D 1
1
2
BAT64-07
34
D 2
D 1
1
2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Package Configuration L
BAT64
BAT64-02V*
BAT64-02W
BAT64-04
SOT23
SC79
SCD80
SOT 23
single
single
single
series
(nH) Marking
S
1.8
0.6
0.6
1.8
63s
t
64
64s
BAT64-04W
BAT64-05
BAT64-05W
BAT64-06
BAT64-06W
BAT64-07
* Preliminary data
SOT323
SOT23
SOT323
SOT23
SOT323
SOT143
series
common cathode
common cathode
common anode
common anode
parallel pair
1
1.4
1.8
1.4
1.8
1.4
2
Mar-10-2004
64s
65s
65s
66s
66s
67s
Maximum Ratings at TA = 25°C, unless otherwise specified
BAT64...
Parameter
Symbol Value Unit
Diode reverse voltage V
Forward current I
Non-repetitive peak surge forward current
I
(t ≤ 10ms)
Average forward current (50/60Hz, sinus) I
Total power dissipation
BAT64, T
BAT64-02V, BAT64-02W, T
≤ 86°C
S
≤ 121°C
S
BAT64-04, BAT64-06, BAT64-07, T
BAT64-04W, BAT64-06W, T
BAT64-05, T
BAT64-05W, T
≤ 36°C
S
≤ 104°C
S
≤ 111°C
S
≤ 61°C
S
P
Junction temperature T
Storage temperature T
R
F
FSM
FAV
tot
j
stg
40 V
250 mA
800
120
250
250
250
250
250
250
150 °C
-55 ... 150
mW
Thermal Resistance
Parameter
Junction - soldering point1)
BAT64
BAT64-02V, BAT64-02W
BAT64-04, BAT64-06, BAT64-07
BAT64-04W, BAT64-06W
BAT64-05
BAT64-05W
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
Symbol Value Unit
R
thJS
K/W
≤ 255
≤ 115
≤ 355
≤ 155
≤ 455
≤ 185
2
Mar-10-2004
Electrical Characteristics at TA = 25°C, unless otherwise specified
BAT64...
Parameter
DC Characteristics
Breakdown voltage
= 10 µA
I
(BR)
Reverse current
= 30 V
V
R
= 30 V, TA = 85 °C
V
R
Forward voltage
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
I
F
AC Characteristics
Diode capacitance
V
= 1 V, f = 1 MHz
R
Symbol Values Unit
min. typ. max.
V
I
V
C
(BR)
R
F
T
40 - - V
-
-
270
310
370
500
-
-
320
385
440
570
2
200
350
430
520
750
- 4 6 pF
µA
mV
Reverse recovery time
I
= 10 mA, IR = 10 mA, measured IR = 1 mA ,
F
R
= 100 Ω
L
t
rr
- - 5 ns
3
Mar-10-2004