INFINEON BAT 63-07W User Manual
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Silicon Schottky Diode
BAT 63-07W
Preliminary data
3
• Low barrier diode for detectors up to GHz
frequencies
4
• For high-speed switching applications
• Zero bias detector diode
1
14
32
EHA07008
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BAT 63-07W 63s 1=C1 2=C2 3=A2 4=A1 SOT-343
Maximum Ratings
2
VPS05605
Parameter
Symbol Value Unit
Diode reverse voltage V
Forward current I
Total power dissipation, TS = tbd °C P
Junction temperature T
Storage temperature T
Thermal Resistance
Junction - ambient
1)
R
Junction - soldering point R
R
F
tot
j
st
thJA
thJS
3 V
100 mA
100 mW
150 °C
-55 ... 150
≤ tbd
≤ tbd
K/W
Aug-05-19991
Electrical Characteristics at
A
T
= 25°C, unless otherwise specified.
BAT 63-07W
Parameter
DC characteristics
Reverse current
V
= 3 V
R
Forward voltage
I
= 1 mA
F
AC characteristics
Diode capacitance
V
= 0.2 V, f = 1 MHz
R
Case capacitance
f = 1 MHz
Differential resistance
V
= 0 V, f = 10 kHz
R
Symbol Values Unit
min. typ. max.
I
V
C
R
L
R
F
T
C
0
s
- - 10 µA
- 190 300 mV
0.85 pF0.65-
-C
- 30
-0.1
-
kΩ
- 1.6 - nHSeries inductance
Aug-05-19992
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