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查询BAT 14-03W供应商
Silicon Schottky Diode
• DBS mixer applications up to 12 GHz
• Low noise figure
• Low barrier type
BAT 14-03W
2
1
VPS05176
21
EHA07007
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking PackagePin Configuration
2 = AO/white SOD-323BAT 14-03W 1 = C
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Total power dissipation, TS ≤ 85 °C P
Junction temperature
Operating temperature range
Storage temperature
Symbol Value Unit
V
I
T
T
T
R
F
tot
j
op
st
4 V
90 mA
100 mW
150 °C
-55 ... 125 °C
-55 ... 150 °C
Thermal Resistance
Junction - ambient
Junction - soldering point
1)
R
R
thJA
thJS
≤450
≤690
K/W
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Oct-07-19991
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
BAT 14-03W
Parameter
DC characteristics (per diode)
Breakdown voltage
I
= 5 µA
(BR)
Forward voltage
I
= 1 mA
F
I
= 10 mA
F
AC characteristics (per diode)
Diode capacitance
V
= 0 V, f = 1 MHz
R
Forward resistance
IF = 10mA / 50mA
Symbol Values Unit
min. typ. max.
V
V
C
R
(BR)
F
T
F
4 - - V
0.36
0.48
0.43
0.55
0.52
0.66
- 0.22 0.35 pF
- 5.5 -
Ω
Oct-07-19992
BAT 14-03W
Forward current IF = f (VF)
TA = parameter
2
10
mA
1
10
F
I
0
10
-1
10
-2
10
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
-40°C
25°C
85°C
125°C
V
VF
1.0
Reverse current IR = f (VR)
TA = Parameter
1
10
mA
0
10
R
I
-1
10
-2
10
-3
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
TA=125°C
TA=85°C
TA=25°C
V
VR
5.0
Diode capacitance CT = f (VR)
f = 1MHz
0.50
pF
0.40
0.35
T
C
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
V
5.0
R
Oct-07-19993
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