Infineon BAS70, BAS70-04, BAS70-05, BAS70-06 Schematic [ru]
BAS70...
Silicon Schottky Diodes
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping
High-level detecting and mixing
3
1
VPS05161
BAS70-04 BAS70-05 BAS70-06BAS70
13
EHA07002
1
3
2
EHA07005
3
1
EHA07004
1
2
3
2
EHA07006
Type Marking Pin Configuration Package
BAS70
BAS70-04
BAS70-05
73s
74s
75s
1 = A
1 = A1
1 = A1
2 n.c.
2 = C2
2 = A2
3 = C
3 = C1/A2
3 = C1/C2
SOT23
SOT23
SOT23
2
BAS70-06
76s
1 = C1
Maximum Ratings
Parameter
Symbol Value Unit
Diode reverse voltage V
Forward current I
Surge forward current, t 10ms I
Total power dissipation
T
72°C, BAS70
S
T
48°C, BAS70-04; BAS70-06
S
T
22°C , BAS70-05
S
P
Junction temperature T
Operating temperature range T
Storage temperature T
Thermal Resistance
Parameter
Symbol Value Unit
R
F
FSM
tot
j
op
stg
2 = C2
3 = A1/A2
SOT23
70 V
70 mA
100
250
250
250
150 °C
-55 ... 150
-55 ... 150
mW
Junction - soldering point1)
BAS70
BAS70-04; BAS70-06
BAS70-05
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
R
thJS
1
310
410
510
Sep-04-2001
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
BAS70...
Parameter
DC Characteristics
Breakdown voltage
I
= 10 µA
(BR)
Reverse current
V
= 50 V
R
Forward voltage
I
= 1 mA
F
I
= 10 mA
F
I
= 15 mA
F
AC Characteristics
Diode capacitance-
= 0 V, f = 1 MHz
V
R
Differential forward resistance
= 10 mA, f = 10 kHz
I
F
Symbol Values Unit
min. typ. max.
V
I
V
C
r
R
f
(BR)
F
T
70 - - V
- - 0.1
-
-
-
375
705
880
410
750
1000
µA
mV
- 1.6 2 pF
- 30 -
Charge carrier life time
= 25 mA
I
F
rr
- - 100 ps
2
Sep-04-2001
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